KR100593151B1 - Nitride semiconductor light emitting device and manufacturing method - Google Patents

Abstract

A nitride semiconductor light emitting device according to the present invention, a substrate; A buffer layer formed on the substrate; An In-doped GaN layer doped with indium formed on the buffer layer; A first electrode layer formed on the in-doped GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the In _x Ga _1-x N layer; A first p-GaN layer formed over the active layer; A second electrode layer formed on the first p-GaN layer; A second p-GaN layer formed to partially protrude on the second electrode layer; A third electrode layer formed on the second p-GaN layer; It includes.

Herein, the second and third electrode layers may include an n-In _x Ga _1-x N layer having a super grading structure in which indium content is sequentially changed, an InGaN / InGaN super lattice structure layer, or an InGaN / AlInGaN super layer. It is formed of a super lattice structure layer.

In addition, the second and third electrode layer is further provided with a transparent electrode to which a bias voltage is applied, the transparent electrode is formed of a transmissive metal oxide or a transmissive resistive metal, Au containing ITO, ZnO, IrOx, RuOx, NiO or Ni metal Selected from the alloy layer.

Description

Nitride semiconductor LED and fabrication method

1 is a schematic view showing a laminated structure of a first embodiment of a nitride semiconductor light emitting device according to the present invention;

2 is a schematic view showing a laminated structure of a second embodiment of a nitride semiconductor light emitting device according to the present invention;

3 is a schematic view showing a laminated structure of a third embodiment of a nitride semiconductor light emitting device according to the present invention;

<Explanation of symbols for the main parts of the drawings>

1, 21, 31 ... nitride semiconductor light emitting device

2 ... substrate 4 ... buffer layer

6 ... In-doped GaN layer 8 ... Si-In co-doped GaN layer

10 ... In _x Ga _1-x N layer 12 ... Active layer

14 ... the first p-GaN layer

16 ... First Super Grading n-In _x Ga _1-x N Layer

18 ... second p-GaN layer 20 ... second n-In _x Ga _1-x N layer

26 ... First InGaN / AlInGaN Superlattice Layer

30 ... Second InGaN / AlInGaN Superlattice Layer

33 ... first SiN _x cluster layer 35 ... second SiN _x cluster layer

37, 43 ... In _x Ga _1-x N well layer 39, 45, 49 ... SiN _x cluster layer

41, 47 ... In _x Ga _1-x N barrier layer

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same.

Generally, GaN-based nitride semiconductors are applied to optical devices of blue / green LEDs and electronic devices, such as high-speed switching and high-output devices, such as MESFETs and HEMTs. In particular, blue / green LED devices have already been mass-produced and global sales are increasing exponentially.

Such a GaN-based nitride semiconductor light emitting device is mainly grown on a sapphire substrate or a SiC substrate. In addition, a buffer layer is grown on a sapphire substrate or a SiC substrate at a low temperature growth temperature to form a polycrystalline thin film of Al _y Ga _1-y N. Thereafter, an undoped GaN layer, a silicon-si doped n-GaN layer, or a mixed structure of the above structure is grown at a high temperature to form an n-GaN layer. In addition, a nitride semiconductor light emitting device is manufactured by forming a p-GaN layer doped with magnesium (Mg) thereon. The light emitting layer (multi-quantum well structure active layer) is formed in a sandwich structure between the n-GaN layer and the p-GaN layer.

The p-GaN layer is formed by doping Mg atoms during crystal growth. Mg atoms injected into the doping source during crystal growth should be replaced with Ga positions to act as p-GaN layers. By combining, Mg-H composites are formed in the GaN crystal layer to form a high resistance of about 10 ㏁.

Therefore, after forming the pn junction light emitting device, a subsequent activation process for breaking the Mg-H complex to replace Mg atoms with Ga sites is required. However, the light emitting device has a disadvantage in that an amount of acting as a carrier contributing to luminescence in the activation process is about 10 ¹⁷ / cm 3, which is much lower than the Mg atomic concentration of 10 ¹⁹ / cm 3 or more, so that it is difficult to form a resistive contact.

To improve this problem, a method of increasing current injection efficiency by lowering contact resistance by using a very thin transparent resistive metal material has been used. By the way, the thin transparent resistive metal used to reduce the contact resistance generally has a light transmittance of about 75 to 80%, otherwise serves as a loss. In addition, in order to increase the internal quantum efficiency, there is a limit to improving the light output in the crystal growth of the nitride semiconductor itself without improving the design of the light emitting device and the crystallinity of the light emitting layer and the p-GaN layer.

In the light emitting device having the above structure, when a bias voltage is applied to the n-GaN layer and the p-GaN layer, electrons and holes are injected into the n-type and p-type nitride semiconductor layers, respectively, and recombine in the light-emitting layer to emit light. In this case, the light emitted on the surface of the light emitting device has a problem in that a part of the light is reflected back to the inside of the interface between the p-GaN layer and the contact layer due to the difference in refractive index with air to reduce the light output.

An object of the present invention is to provide a nitride semiconductor light emitting device capable of improving the crystallinity of the active layer constituting the nitride semiconductor light emitting device and improving the light output and reliability thereof, and a method of manufacturing the same.

In order to achieve the above object, a nitride semiconductor light emitting device according to the present invention, a substrate; A buffer layer formed on the substrate; An In-doped GaN layer doped with indium formed on the buffer layer; A first electrode layer formed on the In-doped GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the In _x Ga _1-x N layer; A first p-GaN layer formed on the active layer; A second electrode layer formed on the first p-GaN layer; A second p-GaN layer formed to partially protrude on the second electrode layer; A third electrode layer formed on the second p-GaN layer; Its features are to include.

The second and third electrode layers may include an n-In _x Ga _1-x N layer having a super grading structure of which indium content is sequentially changed, an InGaN / InGaN super lattice structure layer, or InGaN / AlInGaN. It is characterized by the fact that it is formed of a layer of super lattice structure.

In addition, a transparent electrode to which a bias voltage is applied to the second and third electrode layers is further provided, and the transparent electrode is formed of a transparent metal oxide or a transparent resistive metal, and includes ITO, ZnO, IrOx, RuOx, NiO, or Ni metal. The characteristic is that it is selected from the Au alloy layer.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention to achieve the above object, a substrate; A buffer layer formed on the substrate; An In-doped GaN layer doped with indium formed on the buffer layer; A first electrode layer formed on the In-doped GaN layer; A first In _x Ga _1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the first In _x Ga _1-x N layer; A p-GaN layer formed on the active layer; A second n-In _x Ga _1-x N layer formed on the p-GaN layer and having a super grading structure with sequentially changed indium content; Its features are to include.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention in order to achieve the above object, a substrate; A buffer layer formed on the substrate; An In-doped GaN layer doped with indium formed on the buffer layer; A first electrode layer formed on the In-doped GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the In _x Ga _1-x N layer; A p-GaN layer formed on the active layer; An InGaN / AlInGaN super lattice structure layer formed on the p-GaN layer; Its features are to include.

In addition, the nitride semiconductor light emitting device manufacturing method according to the present invention to achieve the above object, forming a buffer layer on a substrate; Forming an In-doped GaN layer doped with indium on the buffer layer; Forming a first electrode layer on the in-doped GaN layer; Forming a first In _x Ga _1-x N layer on the first electrode layer; Forming an active layer emitting light on the first In _x Ga _1-x N layer; Forming a first p-GaN layer on the active layer; Forming a second electrode layer on the first p-GaN layer; Forming a second p-GaN layer and a third electrode layer partially protruding on the second electrode layer; Its features are to include.

According to the present invention as described above, there is an advantage that the crystallinity of the active layer constituting the nitride semiconductor light emitting device can be improved, and the light output and reliability can be improved.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view schematically showing a stacked structure of a first embodiment of a nitride semiconductor light emitting device according to the present invention.

In the nitride semiconductor light emitting device 1 according to the present invention, as shown in FIG. 1, the buffer layer 4 is formed on the substrate 2. Here, the buffer layer 4 has an AlInN / GaN stacked structure, an In _x Ga _1-x N / GaN stacked structure, an Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN stacked structure. It may be selected from the.

An indium-doped In-doped GaN layer 6 is formed on the buffer layer 4, and an n-type first electrode layer is formed on the In-doped GaN layer 6. As the n-type first electrode layer, a Si-In co-doped GaN layer 8 formed by simultaneously doping silicon and indium may be employed.

Also, the Si-In co-doped GaN layer 8, the indium content of low above the low-mole of claim 1 In _x Ga and the _1-x N layer 10 is formed, the first ₁ In _x Ga _1-x N The active layer 12 emitting light is formed on the layer 10. The active layer 12 may be provided as a single quantum well structure or a multi quantum well structure formed of an InGaN well layer / InGaN barrier layer, and the stacked structure thereof will be described in detail later with reference to FIG. 3.

Subsequently, a first p-GaN layer 14 is formed on the active layer 12. In this case, the first p-GaN layer 14 may be doped with magnesium.

An n-type second electrode layer is formed on the first p-GaN layer 14. The n-type second electrode layer may be a super-grading n-In _x Ga _1-x N layer 16 that controls an energy band gap by sequentially changing indium composition. In this case, the super grading n-In _x Ga _1-x N layer 16 may have a composition range formed at 0 <x <0.2.

As described above, in the nitride semiconductor light emitting device according to the present invention, both the first electrode layer 8 and the second electrode layer 16 are formed of n-type nitride, and the first p-GaN layer 14 is formed therebetween. In view of this, unlike the conventional pn junction light emitting device, it can be interpreted as having an npn junction light emitting device structure.

On the super-grading n-In _x Ga _1-x N layer 16, a second p-GaN layer 18 and a third electrode layer n-In _x Ga _1-x N layer which partially protrude into the concave-convex structure. 20 is formed. The second p-GaN layer 18 and the third electrode layer 20 have the same or similar structure as the first p-GaN layer 14 and the second electrode layer, and may be formed through the following process. Can be.

That is, the first said by the super grading _{n-In x Ga 1-x} N layer to thereby form insulator film 16 in a partial, partially exposed to the super grading _{n-In x Ga 1-x} N layer 16. In addition, a second p-GaN layer 18 and an n-In _x Ga _1-x N layer 20 are formed on the exposed super-grading n-In _x Ga _1-x N layer 16. It may be performed through the process of removing the insulating film.

In this case, the insulating film may be selectively masked in various forms, and the n / p nitride semiconductors 20 and 18 may be selectively grown on the second electrode layer 16 in various sizes, shapes, and depths. . According to the present invention, it is possible to maximize the light reflection on the upper surface by forming a bend (unevenness) on the surface of the light emitting device by selectively removing the portion masked with the insulating film.

Conventionally, the surface of the pn junction light emitting device is partially etched to form a curved shape. This etching process technology causes a damage to the p-GaN surface, the contact resistance is increased accordingly to reduce the current injection effect has the disadvantage of reducing the light output. In addition, due to the increased contact resistance, there is a problem that seriously affects the reliability of the device due to the heat generated by the high contact resistance when applying a high current.

In addition, the n-type nitride semiconductor (for example, the super-grading n-In _x Ga _1-x N layer 16, 20) used as the second and third electrode layers has a lower resistance than the conventional p-GaN contact layer. The contact resistance can be reduced to maximize the current injection. As the transparent electrode to which the bias voltage is applied to the second and third electrode layers, a transparent resistive metal or a transparent metal oxide layer having a maximum light spread and excellent light transmittance may be used to maximize light output. As such a material, Au alloy metals including ITO, ZnO, RuOx, IrOx and NiO or Ni may be used. The transparent electrode may be formed on the second electrode layer 16 and the third electrode layer 20.

2 is a schematic view showing a stacked structure of a second embodiment of a nitride semiconductor light emitting device according to the present invention.

The stacked structure of the nitride semiconductor light emitting element 21 shown in FIG. 2 differs only in the second and third electrode layers as compared with the nitride semiconductor light emitting element 1 shown in FIG. Let's explain.

That is, in the second embodiment of the nitride semiconductor light emitting device 21 according to the present invention, the first and second InGaN / AlInGaN super lattice structure layers 26 and 30 are formed as the second and third electrode layers. The case is shown. The InGaN / AlInGaN super lattice structure layers 26 and 30 may be doped with silicon.

By forming such a laminated structure, an n / p / n light emitting device can be formed, and selectively masked with an insulating layer on its surface to regrow only n / p nitride semiconductors, and then selectively masked with an insulating layer again. It is possible to manufacture a light emitting device having irregularities (bending) by removing the region.

Although not illustrated in the drawings, the first and second InGaN / InGaN super lattice structure layers may be formed as the second and third electrode layers, and silicon may be doped.

Next, the structure of the active layer employed in the nitride semiconductor light emitting device 31 according to the present invention will be described in detail with reference to FIG. 3. 3 is a schematic view showing a laminated structure of a third embodiment of a nitride semiconductor light emitting device according to the present invention. In the stacked structure shown in FIG. 3, the description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 will be omitted.

In the nitride semiconductor light emitting device 31 according to the present invention, as shown in FIG. 3, in order to increase the internal quantum efficiency, a low-mole In having a low indium content for controlling the strain of the active layer _{An x} Ga _1-x N layer 10 is formed. In addition, on the lower and upper portions of the low-mole In _x Ga _1-x N layer 10 to improve optical output and reverse leakage current due to indium fluctuations, an atomic scale The first SiN _x cluster layer 33 and the second SiN _x cluster layer 35 are further provided in a controllable form.

In addition, the light emitting active layer may be formed of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer.

In FIG. 3, as an active layer, a SiN _x cluster layer 39 and 45 is formed between an In _y Ga _1-y N well layer 37 and 43 and an In _z Ga _1-z N barrier layer 41 and 47. An example of a light emitting device formed of a multi-quantum well structure is further provided. In order to improve the luminous efficiency of the active layer, the composition ratio of In _y Ga _1-y N well layer (0 <y <0.35) / SiNx cluster layer / In _z Ga _1-z N barrier layer (0 <z <0.1) You can also adjust. In addition, considering the relationship with the low-mole In _x Ga _1-x N layer 10 having a low indium content, the In _y Ga _1-y N well layer 37 (43) / In _z Ga _{1- The} indium content doped in the _z N barrier layers 41 and 47 and the indium content doped in the low-mole In _x Ga _1-x N layer 10 are 0 <x <0.1 and 0 <y <0.35, respectively. , It can be adjusted to have a value of 0 <z <0.1.

Although not shown in the drawings, an indium variation of the In _y Ga _1-y N well layer between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer is controlled. A GaN cap layer may be formed. At this time, the indium content of each of the light emitting well layer and the barrier layer is In _y Ga _1-y N (0 <y <0.35) / GaN cap / In _z Ga _1-z N (0 <z <0.1 Can be configured.

Then, after growing the last layer of the active layer consisting of a single quantum well layer or a multi-quantum well structure, the SiNx layer 49 is grown to an atomic scale thickness of the first p-GaN layer 14. It is possible to suppress diffusion of the Mg element inside the active layer.

In FIG. 3, the super-grading n-In _x Ga _1-x N layer 16 is formed as the second electrode layer, but the InGaN / AlInGaN super lattice structure layer is formed as the second electrode layer. Alternatively, the InGaN / InGaN super lattice structure layer may be formed.

Here, although not shown in the embodiment (FIGS. 1 to 3), an electrode (or an electrode pad) of the first electrode layer is formed on the first electrode layer by partially etching the first electrode layer of the nitride semiconductor. An electrode pad may be further formed on the transparent electrode formed on the second or third electrode layer.

As described above, according to the nitride semiconductor light emitting device according to the present invention, the current concentration phenomenon due to the high contact resistance of the p-GaN layer itself used as the p-type electrode layer in the conventional p / n junction light emitting device is n / By applying the p / n junction light emitting device structure it is possible to improve the current injection while reducing the operating voltage. In addition, only the n / p bonding layer may be selectively regrown using an insulating layer to form a bend (concave-convex) on the surface of the light emitting device, thereby suppressing retroreflection on the surface to increase luminous efficiency.

In addition, the nitride semiconductor light emitting device according to the present invention reduces surface damage caused by partial etching of the conventional p-GaN surface and its operating voltage, and does not increase external quantum efficiency during the manufacturing process of the light emitting device. It is a (n / p /) n / p / n junction light emitting device which fundamentally improves the internal quantum efficiency of a light emitting device having excellent crystallinity through growth.

In addition, the nitride semiconductor light emitting device according to the present invention is composed of the same n-type nitride semiconductor of the first electrode layer and the second electrode layer, in particular, it is possible to improve the light output with a structure of improved contact resistance of the second electrode layer.

As described above, according to the nitride semiconductor light emitting device and the manufacturing method thereof according to the present invention, there is an advantage that the crystallinity of the active layer constituting the nitride semiconductor light emitting device can be improved, and the light output and reliability can be improved.

Claims (50)

Board; A buffer layer formed on the substrate; An In-doped GaN layer formed on the buffer layer; A first electrode layer formed on the In-doped GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the In _x Ga _1-x N layer; A first p-GaN layer formed on the active layer; A second electrode layer formed on the first p-GaN layer; A second p-GaN layer formed to partially protrude on the second electrode layer; A third electrode layer formed on the second p-GaN layer; Nitride semiconductor light emitting device comprising a. The method of claim 1, The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN A nitride semiconductor light emitting device, characterized in that formed and selected from the laminated structure of. The method of claim 1, The first electrode layer is a nitride semiconductor light emitting device, characterized in that the silicon and indium-doped GaN layer. The method of claim 1, And a first SiN _x cluster layer and a second SiN _x cluster layer are further formed on the lower and upper portions of the In _x Ga _1-x N layer, respectively. The method of claim 4, wherein And the first SiN _x cluster layer and the second SiN _x cluster layer have a thickness of several to several tens of angstroms . The method of claim 1, The active layer is a nitride semiconductor light emitting device, characterized in that consisting of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method according to claim 5 or 6, And a SiN _x cluster layer further formed between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer. The method of claim 6, Between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer, a GaN cap layer for controlling the indium variation of the In _y Ga _1-y N well layer is further included. A nitride semiconductor light emitting device, characterized in that formed. The method of claim 1, A nitride semiconductor light emitting device, characterized in that a SiN _x cluster layer is further formed between the active layer and the first p-GaN layer. The method according to claim 7 or 9, The SiN _x cluster layer is a nitride semiconductor light emitting device, characterized in that formed in the thickness of several tens of angstroms . The method of claim 6, Indium content doped in the In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer and indium content doped in the In _x Ga _1-x N layer are each 0 <x <0.1, 0 A nitride semiconductor light emitting device having a value of <y <0.35, 0 <z <0.1. The method of claim 1, The first p-GaN layer is nitride semiconductor light emitting device, characterized in that formed by doping with magnesium. The method of claim 1, At least one of the second electrode layer and the third electrode layer is a nitride semiconductor light emitting device, characterized in that the n-In _x Ga _1-x N layer of a super grading structure in which the indium content is sequentially changed. The method of claim 13, The n-In _x Ga _1-x N layer of the super grading structure is formed in the range of 0 <x <0.2. The method of claim 1, And at least one of the second electrode layer and the third electrode layer is formed of an InGaN / InGaN or InGaN / AlInGaN super lattice structure. The method of claim 15, At least one of the second electrode layer and the third electrode layer is silicon nitride light emitting device, characterized in that the doped. The method of claim 1, The In _x Ga _1-x N layer is a nitride semiconductor light emitting device, characterized in that the indium content is lower than the indium content contained in the active layer. The method of claim 1, The electrode layer is an nitride semiconductor light emitting device, characterized in that the n-type nitride semiconductor. The method of claim 1, A nitride semiconductor light emitting device, characterized in that the transparent electrode is further provided on at least one of the second electrode layer and the third electrode layer . The method of claim 19, The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed of a transparent metal oxide or a transparent resistive metal. The method of claim 20, The transparent metal oxide is nitride semiconductor light emitting device, characterized in that formed by selecting from the materials of ITO, ZnO, IrOx, RuOx, NiO. The method of claim 20, The transparent resistive metal is a nitride semiconductor light emitting device, characterized in that formed of an Au alloy layer containing Ni metal. The method of claim 19, The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed on the second electrode layer, the third electrode layer. Board; A buffer layer formed on the substrate; An In-doped GaN layer formed on the buffer layer ; A first electrode layer formed on the In-doped GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer ; An active layer emitting light, formed on the In _x Ga _1-x N layer ; A p-GaN layer formed on the active layer; A second n-In _x Ga _1-x N layer formed on the p-GaN layer and having a super grading structure with sequentially changed indium content; Nitride semiconductor light emitting device comprising a. Board; A buffer layer formed on the substrate; An In-doped GaN layer formed on the buffer layer ; A first electrode layer formed on the In-doped GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the In _x Ga _1-x N layer; A p-GaN layer formed on the active layer; An InGaN / AlInGaN super lattice structure layer formed on the p-GaN layer; Nitride semiconductor light emitting device comprising a. The method of claim 24 or 25, The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN A nitride semiconductor light emitting device, characterized in that formed and selected from the laminated structure of. The method of claim 24 or 25, The In _x Ga _1-x N layer is a nitride semiconductor light emitting device, characterized in that the indium content is lower than the indium content contained in the active layer. The method of claim 24 or 25, The first electrode layer is a nitride semiconductor light emitting device, characterized in that the silicon and indium-doped GaN layer. The method of claim 24 or 25, And a first SiN _x cluster layer and a second SiN _x cluster layer are further formed on the lower and upper portions of the In _x Ga _1-x N layer , respectively. The method of claim 24 or 25, The active layer is a nitride semiconductor light emitting device, characterized in that consisting of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method of claim 30, A nitride semiconductor light emitting device, characterized in that a SiN _x cluster layer is further formed between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer. The method of claim 30, Between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer, a GaN cap layer for controlling the indium variation of the In _y Ga _1-y N well layer is further included. A nitride semiconductor light emitting device, characterized in that formed. The method of claim 24 or 25, A nitride semiconductor light emitting device, characterized in that a SiN _x cluster layer is further formed between the active layer and the p-GaN layer. The method of claim 30, Indium content doped in the In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer and indium content doped in the In _x Ga _1-x N layer are each 0 <x <0.1,0 A nitride semiconductor light emitting device having a value of <y <0.35, 0 <z <0.1. Forming a buffer layer over the substrate; Forming an In-doped GaN layer on the buffer layer; Forming a first electrode layer on the in-doped GaN layer; Forming a first In _x Ga _1-x N layer on the first electrode layer; Forming an active layer emitting light on the first In _x Ga _1-x N layer; Forming a first p-GaN layer on the active layer; Forming a second electrode layer on the first p-GaN layer; Forming a second p-GaN layer and a third electrode layer partially protruding on the second electrode layer; Nitride semiconductor light emitting device manufacturing method comprising a. The method of claim 35, wherein The first electrode layer is a nitride semiconductor light emitting device, characterized in that the silicon and indium-doped GaN layer. The method of claim 35, wherein And forming a first SiN _x cluster layer and a second SiN _x cluster layer before and after forming the first In _x Ga _1-x N layer, respectively. The method of claim 35, wherein The active layer is a nitride semiconductor light emitting device, characterized in that formed of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method of claim 38, Between the step at which the active layer of In _y Ga _1-y N well layers and In _z Ga _1-z N barrier forming layer is formed, the nitride semiconductor light-emitting device, characterized in that the step in which the SiN _x cluster layer formed is further provided with Manufacturing method. The method of claim 38, GaN cap controlling the amount of indium variation of the In _y Ga _1-y N well layer between the step of forming the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer forming the active layer The method of manufacturing a nitride semiconductor light emitting device, characterized in that it further comprises the step of forming a layer. The method of claim 35, wherein And forming a SiN _x cluster layer between the active layer and the step of forming the p-GaN layer. The method of claim 35, wherein At least one of the second electrode layer and the third electrode layer is a nitride semiconductor light emitting device manufacturing method characterized in that the indium content is formed of a n-In _x Ga _1-x N layer of a super grading structure (sequentially changed) . The method of claim 35, wherein At least one of the second electrode layer and the third electrode layer is formed of an InGaN / InGaN or InGaN / AlInGaN super lattice structure. The method of claim 43, At least one of the second electrode layer and the third electrode layer is a silicon semiconductor light emitting device manufacturing method, characterized in that formed by doping. The method of claim 35, wherein Forming a second p-GaN layer and a third electrode layer partially protruding on the second electrode layer, Partially forming an insulating film on the second electrode layer, partially exposing the second electrode layer; Forming a p-GaN layer and a third electrode layer on the exposed second electrode layer; Removing the insulating film; Nitride semiconductor light emitting device manufacturing method comprising a. The method of claim 35, wherein And after forming the partially protruding second p-GaN layer and the third electrode layer, forming a transparent electrode on the second electrode layer. The method of claim 46, The transparent electrode is a method of manufacturing a nitride semiconductor light emitting device, characterized in that formed of a transparent metal oxide or a transparent resistive metal. The method of claim 47, The transparent metal oxide is selected from the materials of ITO, ZnO, IrOx, RuOx, NiO formed nitride semiconductor light emitting device, characterized in that formed. The method of claim 47, The transparent resistive metal is a nitride semiconductor light emitting device manufacturing method, characterized in that formed of an Au alloy layer containing Ni metal. The method of claim 46, The transparent electrode is a nitride semiconductor light emitting device manufacturing method, characterized in that formed on the second metal layer, the third electrode layer.

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