KR100547700B1 - Organic electroluminescent device and manufacturing method thereof - Google Patents

Abstract

The organic electroluminescent device according to the present invention includes: first and second substrates having subpixels defined as the smallest unit area in which an image is implemented and disposed to face each other at a predetermined interval; An array element having a thin film transistor formed on an inner surface of the first substrate in subpixel units; A first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate and made of a light transmissive metal material; A barrier rib formed at an edge portion of the subpixel unit below the first electrode and formed of an insulating material; An organic light emitting layer and a second electrode for an organic light emitting diode device formed in subpixel units in the partition wall; A thin film type getter provided in a predetermined region of the first substrate or the second plate to absorb moisture in the device; It characterized in that it comprises a conductive spacer for electrically connecting the thin film transistor and the second electrode provided for each subpixel.

Description

Organic electroluminescent device and method of manufacturing the same {Organic Electro luminescence Device and fabrication method

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

Figure 2 is a schematic cross-sectional view of a conventional bottom emission organic electroluminescent device.

3 is an enlarged cross-sectional view of one subpixel area of the FIG. 2 bottom emission type organic light emitting display device;

Figure 4 is a process flow diagram for the manufacturing process of the conventional organic electroluminescent device.

5 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type.

6 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type according to an embodiment of the present invention.

7 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type according to another embodiment of the present invention.

8 is a schematic cross-sectional view of an organic light emitting display device of the dual panel type according to another embodiment of the present invention.

9 is a process flow diagram for one embodiment of an organic electroluminescent device manufacturing process according to the present invention.

10 is a process flow diagram for another embodiment of the organic electroluminescent device manufacturing process according to the present invention.

<Explanation of symbols for main parts of the drawings>

160, 162, 164: thin film getter

The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device of a dual panel type and a method of manufacturing the same.

One of the new flat panel displays (FPDs), organic light emitting diodes are self-luminous, so they have better viewing angles, contrast, etc. than liquid crystal displays. Do.

In addition, since it is possible to drive DC low voltage, fast response speed, and all solid, it is strong against external shock, wide use temperature range, and especially inexpensive in terms of manufacturing cost.

In particular, unlike the liquid crystal display device or the plasma display panel (PDP), the deposition and encapsulation equipments can be referred to in the manufacturing process of the organic light emitting device, and the process is very simple.

In the related art, a passive matrix having no separate switching device has been mainly used as a driving method of the organic light emitting device.

However, in the passive matrix method, since the scan lines and the signal lines are configured to form a device in a matrix form, the scanning lines are sequentially driven over time in order to drive each pixel, thereby requiring the average luminance. In order to indicate, the instantaneous luminance is equal to the average luminance multiplied by the number of lines.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off a pixel, is positioned for each subpixel, and the first electrode connected to the thin film transistor is The second electrode, which is turned on / off in subpixel units and faces the first electrode, becomes a common electrode.

In the active matrix method, a voltage applied to a pixel is charged in a storage capacitor (C _ST ), so that power is applied until the next frame signal is applied, thereby relating to the number of scan lines. Run continuously for one screen without

Therefore, according to the active matrix method, since the same luminance is applied even when a low current is applied, it has the advantage of low power consumption, high definition, and large size.

Hereinafter, the basic structure and operation characteristics of the active matrix organic electroluminescent device will be described in detail with reference to the accompanying drawings.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

As shown, the scan line 2 is formed in the first direction, is formed in the second direction crossing the first direction, and the signal line 3 and the power supply line spaced apart from each other by a predetermined distance. (4) is formed to define one subpixel area.

At the intersection of the scan line 2 and the signal line 3, a switching TFT 5 as an addressing element is formed, and the switching TFT 5 and the power supply line 4 are formed. A driving capacitor C _ST 6 is connected to the driving capacitor C _ST 6, which is connected to the storage capacitor C _ST 6 and the power supply line 4, and is a driving thin film transistor 7 that is a current source element. Is formed, and is connected to the driving thin film transistor 7 to form an organic luminescent diode 8.

When the organic light emitting diode 8 supplies current to the organic light emitting material in a forward direction, a P (positive) -N (negative) junction between an anode electrode, which is a hole providing layer, and a cathode electrode, which is an electron providing layer, is applied. Since the electron and the hole move and recombine with each other through the junction, they have less energy than when the electron and the hole are separated, and thus, the principle of emitting light due to the difference in energy generated at this time is used.

The organic light emitting diode is classified into a top emission type and a bottom emission type according to a traveling direction of light emitted from the organic light emitting diode.

Hereinafter, FIG. 2 is a schematic cross-sectional view of a conventional bottom emission type organic light emitting display device, and is illustrated based on one pixel area including red, green, and blue subpixels.

As illustrated, the first and second substrates 10 and 30 are disposed to face each other, and the edge portions of the first and second substrates 10 and 30 are sealed by a seal pattern 40. The thin film transistor T is formed on the transparent substrate 1 of the first substrate 10 for each subpixel, and is connected to the thin film transistor T to form the first electrode 12. Red, green, and blue colors are disposed on the transistor T and the first electrode 12 to be connected to the thin film transistor T so as to correspond to the first electrode 12. An organic light emitting layer 14 including a light emitting material is formed, and a second electrode 16 is formed on the organic light emitting layer 14.

The first and second electrodes 12 and 16 serve to apply an electric field to the organic light emitting layer 14.

The second electrode 16 and the second substrate 30 are spaced apart from each other by the seal pattern 40 described above, and although not shown in the drawing, the inner surface of the second substrate 30 may be formed from the outside. A moisture absorbent (not shown) that absorbs the incoming moisture and a semipermeable tape (not shown) for adhesion between the moisture absorbent and the second substrate 30 are included.

For example, when the first electrode 12 is an anode and the second electrode 16 is a cathode in a bottom emission structure, the first electrode 12 is selected from a transparent conductive material, and the second electrode 16 is formed. ) Is selected from a metal material having a low work function, and under these conditions, the organic light emitting layer 14 is formed from a layer in contact with the first electrode 12, a hole injection layer 14a, a hole transport layer 14b; A transporting layer), an emission layer 14c, and an electron transporting layer 14d are formed in this order.

In this case, the light emitting layer 14c has a structure in which light emitting materials for implementing red, green, and blue colors are sequentially disposed for each subpixel.

FIG. 3 is an enlarged cross-sectional view of one subpixel area of the FIG. 2 bottom emission type organic electroluminescent device.

As illustrated, the semiconductor layer 62, the gate electrode 68, the source and drain electrodes 80 and 82 are sequentially formed on the transparent substrate 1 to form a thin film transistor region, and the source and drain electrodes 80, The power electrode 72 and the organic light emitting diode E formed in the power supply line (not shown) are respectively connected to 82.

In addition, the capacitor electrode 64 is positioned with an insulator interposed between the power electrode 72 and a lower portion of the power electrode 72, and the corresponding region forms a storage capacitor region.

Elements formed in the thin film transistor region and the storage capacitor region other than the organic light emitting diode E form the array element A.

The organic light emitting diode E includes a first electrode 12 and a second electrode 16 facing each other with the organic light emitting layer 14 interposed therebetween. The organic electroluminescent diode E is positioned in a light emitting area for emitting self-emitting light to the outside.

As described above, the conventional organic light emitting display device has a structure in which the array device A and the organic light emitting diode E are stacked on the same substrate.

 4 is a flowchart illustrating a manufacturing process of a conventional organic light emitting display device.

st1 is a step of forming an array element on a first substrate, wherein the first substrate refers to a transparent substrate, a scan line on the first substrate, a signal line and a power supply line crossing the scan line and spaced apart from each other; And forming an array element including a switching thin film transistor formed at a point where the scan line and the signal line intersect, and a driving thin film transistor formed at the point where the scan line and the power supply line intersect.

st2 is a step of forming a first electrode which is a first component of the organic light emitting diode, and the first electrode is connected to the driving thin film transistor and patterned for each subpixel.

st3 is a step of forming an organic light emitting layer which is a second component of the organic light emitting diode on the first electrode, and when the first electrode is composed of an anode, the organic light emitting layer is a hole injection layer, a hole transport layer The light emitting layer, the electron transport layer may be laminated in order.

In st4, the second electrode, which is a third component of the organic light emitting diode, is formed on the organic light emitting layer, and the second electrode is formed on the entire surface of the substrate as a common electrode.

At st5, the first substrate is encapsulated using a second substrate, which is another substrate. In this step, the first substrate is protected from an external impact, and the organic light emitting layer is exposed to Encapsulating the outer surface of the first substrate to the second substrate to prevent damage, the inner surface of the second substrate may include a moisture absorbent.

As described above, the conventional bottom emission type organic light emitting diode device is manufactured by bonding an array device and a substrate on which an organic light emitting diode is formed and a separate substrate for encapsulation. In this case, since the product of the yield of the array device and the yield of the organic light emitting diode determines the yield of the organic light emitting diode, the overall organic process of the organic light emitting diode structure yields the overall process yield by the organic electroluminescent diode process. There was a problem that is greatly limited. For example, even if the array element is well formed, when the organic electroluminescent layer using the thin film of about 1000 mW is defective by foreign matter or other factors, the organic electroluminescent element is determined to be a poor grade. .

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there was a problem that the production yield is lowered.

In addition, the bottom emission method has a high degree of freedom and stability due to the encapsulation process, and has a problem in that it is difficult to be applied to a high-resolution product due to the limitation of the aperture ratio. It is advantageous in terms of product life, but in the conventional top emission type structure, since the material selection range is narrow as the cathode is normally positioned on the organic light emitting layer, the transmittance is limited and the light efficiency is reduced, and the light transmittance is minimized. In order to configure a thin-film protective film, there was a problem in that it does not sufficiently block the outside air.

The present invention provides an organic electroluminescent device comprising an array device and an organic light emitting diode on different substrates, wherein a moisture absorbent for removing moisture in the device is formed in an array of an upper substrate or a lower substrate of the organic light emitting device. Accordingly, an object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which improve the lifespan, durability, and impact stability of the device.

In order to achieve the above object, an organic electroluminescent device according to the present invention includes: first and second substrates having subpixels defined as minimum unit areas in which an image is implemented and disposed to face each other at predetermined intervals; An array element having a thin film transistor formed on an inner surface of the first substrate in subpixel units; A first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate and made of a light transmissive metal material; A barrier rib formed at an edge portion of the subpixel unit below the first electrode and formed of an insulating material; An organic light emitting layer and a second electrode for an organic light emitting diode device formed in subpixel units in the partition wall; A thin film type getter provided in a predetermined region of the first substrate or the second plate to absorb moisture in the device; It characterized in that it comprises a conductive spacer for electrically connecting the thin film transistor and the second electrode provided for each subpixel.

Here, the thin film getter is deposited on the front surface of the second electrode provided for each subpixel, wherein the thin film getter is formed of calcium oxide (CaO) or barium oxide (CaO) so as to electrically connect the second electrode and the conductive spacer. BaO) oxide and an alloy form.

Alternatively, the thin film getter is deposited on a region of the second electrode surface provided for each subpixel except for a portion where the second electrode and the conductive spacer contact each other, wherein the thin film getter is zirconium (Zr) or titanium (Ti). ) Group 4A, such as hafnium (Hf), Group 5A, such as niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), and group 7A, such as iron (Fe), ruthenium (Ru), etc. And a material selected from Group 8A, such as Group, Nickel (Ni), and Cobalt (Co).

Alternatively, the thin film getter is formed by depositing in an area on the first substrate except for the portion where the conductive spacer is formed, wherein the thin film getter is a group 4A such as zirconium (Zr), titanium (Ti), and hafnium (Hf). And Group 5A, such as niobium (Nb), tantalum (Ta), chromium (Cr), and molybdenum (Mo), and group 7A, such as iron (Fe) and ruthenium (Ru), nickel (Ni), and cobalt (Co). And a material selected from Group 8A, and the like.

In addition, the method of manufacturing an organic light emitting display device according to the present invention comprises the steps of: defining a first and second substrates of pixels consisting of red, green, and blue subpixels; Forming an array element having a switching element for each subpixel on the first substrate; Forming a first electrode made of a transparent material having transparency on the second substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic light emitting layer on a subpixel basis; Forming a thin film type getter as an absorbent on the second electrode to absorb moisture in the device; Connecting the first and second substrates to conductive spacers; And bonding the first and second substrates, wherein the thin film getter is deposited by a sputtering method.

Prior to the description of the present invention, a dual panel type organic light emitting display device will be described.

FIG. 5 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type, and is illustrated based on one pixel area for convenience of description.

As illustrated, the first and second substrates 110 and 130 are disposed to be spaced apart from each other, and the array element 120 is formed on the inner surface of the transparent substrate 100 of the first substrate 110. An organic light emitting diode device E is formed on an inner surface of the transparent substrate 101 of the second substrate 130, and edge portions of the first and second substrates 110 and 130 are sealed patterns 140. It is sealed by.

The organic light emitting diode device E includes a first electrode 132 used as a common electrode, a partition wall 134 positioned at a boundary between subpixels under the first electrode 132, and a partition wall. In the region 134, the organic light emitting layer 136 and the second electrode 138 are sequentially formed in a pattern separated by subpixel units.

The organic light emitting layer 136 has a structure in which a first carrier transfer layer 136a, a light emitting layer 136b, and a second carrier transfer layer 136c are stacked in this order, and the first and second carrier transfer layers 136a are stacked. , 136c serves to inject and transport electrons or holes into the light emitting layer 136b.

The first and second carrier transfer layers 136a and 136c are defined according to the arrangement of the anode and the cathode. For example, the light emitting layer 136b is selected from a polymer material, and the first electrode 132 is formed of an anode and a cathode. When the second electrode 138 is configured as a cathode, the first carrier transfer layer 136a which is in contact with the first electrode 132 has a structure in which a hole injection layer and a hole transport layer are sequentially stacked, and the second electrode 138 ), The second carrier transport layer 136c is formed in a structure in which an electron injection layer and an electron transport layer are sequentially stacked.

In addition, the array element 120 includes a thin film transistor T. In order to supply current to the organic light emitting diode device E, the second electrode 138 and the thin film transistor ( The columnar conductive spacer 114 is positioned at the position connecting T).

Unlike the spacer for a liquid crystal display device, the conductive spacer 114 is intended to electrically connect two substrates rather than a cell gap holding function, and has a characteristic of having a predetermined height in a column shape between the two substrates. For convenience of description, it will be referred to as a spacer.

When the connection between the conductive spacer 114 and the thin film transistor T is described in more detail, a protective layer having a drain contact hole 122 partially exposing the drain electrode 112 in a region covering the thin film transistor T. 124 is formed, and the conductive spacer 114 is positioned on the passivation layer 124 by being connected to the drain electrode 112 through the drain contact hole 122.

The thin film transistor T electrode substantially connected to the conductive spacer 114 may be a source electrode or a separate metal material pattern.

The above-mentioned thin film transistor T corresponds to a driving thin film transistor connected to the organic light emitting diode E.

The conductive spacer 114 is selected from a conductive material, preferably a ductile, preferably selected from a metal material having a low specific resistance.

The conductive spacer 114 is preferably formed in the manufacturing process of the array element 120 of the first substrate 110.

In addition, the light emission from the organic light emitting layer 134 is characterized in that the upper light emitting method for emitting the light toward the second substrate 130.

Accordingly, the first electrode 132 is selected from a conductive material having a light transmissive or semi-transparent property, and the second electrode 136 is preferably selected from an opaque metal material.

In addition, the space I between the first and second substrates 110 and 130 may be filled with an inert gas or an insulating liquid.

Although not shown in the drawings, the array element 120 includes a scan line, a signal line and a power supply line that intersect the scan line, and are spaced apart from each other by a predetermined distance, a switching thin film transistor positioned at a point where the scan line and the signal line cross, and a storage capacitor. It includes more.

Such a dual panel type organic electroluminescent device has an array element and an organic electroluminescent diode element formed on different substrates, and thus can be compared with the case of forming an existing array element and an organic electroluminescent diode element on the same substrate. At this time, the organic electroluminescent diode device is not affected by the yield of the array device, and thus it may exhibit good characteristics in terms of production management of each device.

In addition, if the screen is implemented in the upper light emission method under the above-described conditions, it is possible to design a thin film transistor without minding the aperture ratio, thereby increasing the array process efficiency, providing a high aperture ratio / high resolution product, and providing a dual panel ( Since the organic light emitting diode device is formed as a dual panel type, it is possible to effectively block outside air than the conventional top emitting method, thereby increasing the stability of the product.

In addition, since the thin film transistor design generated in the conventional lower light emitting device product is configured on a substrate separate from the organic light emitting diode device, the degree of freedom in the arrangement of the thin film transistor can be obtained sufficiently, and the first of the organic light emitting diode device can be obtained. Since the electrode is formed on the transparent substrate, compared with the structure of forming the first electrode on the existing array element, there is an advantage that can increase the degree of freedom for the first electrode. In addition, the thin film transistor applied to the organic light emitting device according to the present invention may be applied to the thin film transistors of various structures in addition to the top gate type in the drawing.

However, such a dual panel type organic electroluminescent device does not have a space for mounting a getter material absorbing moisture inside the panel. Accordingly, the moisture permeation through the seal pattern itself or the interface in contact with the seal pattern and the upper or lower plate The disadvantage is that the lifetime and reliability of the device may be weakened by the moisture or organic solvents emitted from the films laminated on the film.

The present invention was created to overcome the above problems and will be described in more detail with reference to the accompanying drawings.

FIG. 6 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type according to an embodiment of the present invention, and is illustrated based on one pixel area for convenience of description.

However, the same reference numerals are used for the same components as in FIG. 5, and descriptions of the same components will be omitted.

Referring to FIG. 6, in a structure in which an array element and an organic light emitting diode element are configured on different substrates, the conductive element is in contact with the conductive spacer in a conductive spacer electrically connecting the array element and the organic light emitting diode. A thin film type getter is formed on the electrode surface of the organic light emitting diode as a moisture absorbent for removing moisture inside the device.

At this time, the thin film type getter as the moisture absorbent is provided on the entire surface of the second electrode provided for each subpixel.

That is, the first substrate 110 on which the array element 120 is formed and the second substrate 130 on which the organic light emitting diode E is formed are disposed to face each other, and are disposed between the first and second substrates 110 and 130. In the structure in which the conductive spacer 114 is formed in the section and connects the array element 120 and the organic light emitting diode element E, the organic light emitting diode element E is substantially in contact with the conductive spacer 114. In this embodiment, the thin film getter 160 is interposed in the region of the organic light emitting diode device E that is in contact with the conductive spacer 114.

In more detail, the organic light emitting diode device E includes a first electrode 132, a partition wall 134 positioned at a boundary between subpixels under the first electrode 132, and a partition wall 134. The organic light emitting layer 136 and the second electrode 138 that are sequentially formed in the subpixel region, and the thin film getter 160 is further provided on the corresponding lower surface of the second electrode 138. It is characterized by.

At this time, the thin film getter 160 is calcium oxide (CaO), barium oxide (BaO), calcium carbonate (CaCO ₃ ), phosphorus oxide (P ₂ O ₅ ), A material such as zeolite, silica gel, alumina, etc. should be included, and should be conductive because it is formed between the second electrode and the conductive spacer.

Accordingly, the thin film getter 160 should be formed of an oxide and an alloy such as calcium oxide (CaO) and barium oxide (BaO).

In general, the second electrode 138 constituting the organic light emitting diode device (E) is mostly formed by an evaporator, and the metal film formed by using the evaporator is easily peeled off or damaged even with a slight force. As described above, the contact surface characteristics of the second electrode 138 may be improved by the thin film getter 160, and the thin film getter 160 may be deposited by sputtering or the like.

FIG. 7 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type according to another embodiment of the present invention, and is illustrated with one pixel area as a convenience for explanation.

6, the front surface of the second electrode 138 having the thin film getter 162 as the moisture absorbent for each subpixel is not provided, and the second electrode 138 and the conductive spacer 114 are provided. ) Is provided in an area except for the part in contact.

That is, the thin film getter 162 is further provided on a surface of the second lower surface of the second electrode 138 except for the contact portion with the conductive spacer 114.

In order to fulfill the role of the thin film getter 162 as an absorbent, the thin film getter 162 does not need to be conductive.

In this case, the thin film getter 162 may be any material used for a vacuum getter. Examples of the thin film getter 162 include group 4A and niobium (Nb) such as zirconium (Zr), titanium (Ti), and hafnium (Hf). Group 5A, such as tantalum (Ta), chromium (Cr), molybdenum (Mo), and group 7A, such as iron (Fe), ruthenium (Ru), group 8A, such as nickel (Ni), cobalt (Co), etc. This is possible.

In addition, Group 1B, Group 3B, Group 1A materials and the like may be possible, and the thin film getter 162 may be deposited by a method such as sputtering.

In addition, in the thin film type getter as the moisture absorbent, it is difficult to deposit on the upper plate as shown in FIGS. 6 and 7, or when the moisture absorbed by heat generation when the device is driven may come out again inside the panel. The thin film getter 164 may be formed at a contact portion, that is, a portion except a conductive spacer portion, and the like, which is illustrated in FIG. 8.

That is, FIG. 8 is a schematic cross-sectional view of an organic light emitting diode of a dual panel type according to another embodiment of the present invention, wherein the material forming the thin film getter 164 and a method of forming the same are described above with reference to FIG. 7. Is the same as

In this way, by providing a moisture absorbent inside the array, it is possible to absorb the moisture penetrating from the outside of the panel and the moisture generated from the various films stacked inside the panel, thereby extending the life of the device.

9 is a process flowchart of an embodiment of an organic electroluminescent device manufacturing process according to the present invention.

In ST1, an array element is formed on a first substrate, in which step forming a buffer layer on a transparent substrate, forming a semiconductor layer and a capacitor electrode over the buffer layer, and a gate electrode over the semiconductor layer And forming a source electrode and a drain electrode, and forming a power electrode positioned on the capacitor electrode and connected to the source electrode.

In this step, an electrical connection pattern, that is, a conductive spacer, for electrical connection between the first and second substrates may be formed in a subsequent process.

In ST2, the step of forming the first electrode on the second substrate, characterized in that formed on a substrate different from the array element formed in the ST1.

In the present invention, in forming the first electrode for an organic light emitting diode, since it is formed directly on the transparent substrate, unlike the conventional one, the material selection range can be widened and the process becomes much easier. The first electrode is selected from a conductive material having transparency.

In ST3, the organic electroluminescent layer is formed on the first electrode, wherein the organic electroluminescent layer is a light emitting layer made of a light emitting material having red, green, and blue colors, and a low molecular or polymer material for injecting and transporting electrons or holes. Selected from layers.

In ST4, a second electrode is formed on the organic electroluminescent layer, and a thin film getter as a moisture absorbent is formed on the second electrode.

In addition, the thin film getter may be formed on the first substrate after the first substrate is completed and the conductive spacer is formed, which is deposited by a sputtering method or the like.

In ST5, the first and second substrates are electrically connected to each other using conductive spacers. More specifically, the first and second substrates may be formed by using a thin film transistor on the first substrate or a second electrode connection pattern connected to the thin film transistors. It is a step of electrically connecting. That is, the electrical connection pattern serves to connect the driving thin film transistor formed on the first substrate and the organic light emitting diode of the second substrate.

In step ST6, the encapsulation of the first and second substrates is performed by forming a seal pattern at an edge portion of one of the first and second substrates, and joining the first and second substrates. Making a space between the substrates 1 and 2 into a nitrogen atmosphere.

As described above, in the conventional organic light emitting diode, the entire organic light emitting diode panel is poorly treated even if a defect occurs in any of the steps of manufacturing the array device and manufacturing the organic light emitting diode. However, in the present invention, the array substrate and the organic light emitting diode By inspecting each board, the two boards of good products can be bonded together to reduce product defect rate and improve production management efficiency.

Further, in the organic electroluminescent device manufacturing process according to the present invention, the thin film getter may be formed in a predetermined region on the first substrate after the first substrate is prepared and the conductive spacer is formed on the first substrate. (ST 1 '), which is illustrated by FIG.

In this case, the thin film getter may be deposited by a sputtering method or the like, and other processes are the same as the manufacturing process of FIG. 8 described above, and thus description thereof will be omitted.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

According to the organic light emitting device and the manufacturing method according to the present invention as described above, first, the production yield and production management efficiency can be improved, and second, because of the top emission method, it is easy to design a thin film transistor and high opening ratio / High resolution can be realized, and thirdly, since the electrode for the organic light emitting diode is configured on the substrate, the range of material selection can be expanded. Fourth, since it is the top emitting method and the encapsulation structure, it is possible to provide a stable product from the outside air. Finally, by providing a hygroscopic agent in the encapsulation inner array, the moisture absorbed from the outside of the panel and the moisture generated from the various films stacked inside the panel can be absorbed to extend the life of the device.

Claims (10)

 First and second substrates having subpixels, which are the smallest unit areas in which an image is implemented, are disposed to face each other at a predetermined interval; An array element having a thin film transistor formed on an inner surface of the first substrate in subpixel units; A first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate and made of a light transmissive metal material; A barrier rib formed at an edge portion of the subpixel unit below the first electrode and formed of an insulating material; An organic light emitting layer and a second electrode for an organic light emitting diode device formed in subpixel units in the partition wall; A thin film type getter provided in a predetermined region of the first substrate or the second plate to absorb moisture in the device; And an electrically conductive spacer electrically connecting the thin film transistor and the second electrode provided for each subpixel. The method of claim 1, The thin film type getter is deposited on the entire surface of the second electrode provided for each sub-pixel. The method of claim 2, The thin film-type getter is an organic light emitting display device, characterized in that the second electrode and the conductive spacer is formed in the form of an alloy with an oxide of calcium oxide (CaO) or barium oxide (BaO). The method of claim 1, The thin film type getter is deposited on a region excluding the portion where the second electrode is in contact with the conductive spacer on the second electrode surface provided for each subpixel. The method of claim 4, wherein The thin film type getter includes Group 4A, such as zirconium (Zr), titanium (Ti), and hafnium (Hf), and group 5A, such as niobium (Nb), tantalum (Ta), chromium (Cr), and molybdenum (Mo), and iron. An organic electroluminescent device comprising a material selected from Group 7A, such as (Fe) and ruthenium (Ru), and Group 8A, such as nickel (Ni) and cobalt (Co). The method of claim 1, The thin film type getter is formed by being deposited in a region on the first substrate except the portion where the conductive spacer is formed. The method of claim 6, The thin film type getter includes Group 4A, such as zirconium (Zr), titanium (Ti), and hafnium (Hf), and group 5A, such as niobium (Nb), tantalum (Ta), chromium (Cr), and molybdenum (Mo), and iron. An organic electroluminescent device comprising a material selected from Group 7A, such as (Fe) and ruthenium (Ru), and Group 8A, such as nickel (Ni) and cobalt (Co). Providing defined first and second substrates of pixels consisting of red, green, and blue subpixels; Forming an array element having a switching element for each subpixel on the first substrate; Forming a first electrode made of a transparent material having transparency on the second substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic light emitting layer in units of subpixels; Forming a thin film type getter as an absorbent on the second electrode to absorb moisture in the device; Connecting the first and second substrates to conductive spacers; The method of manufacturing an organic light emitting display device comprising the step of bonding the first and second substrates. Providing defined first and second substrates of pixels consisting of red, green, and blue subpixels; Forming an array element having a switching element for each subpixel on the first substrate; Forming a conductive spacer on the first substrate and then forming a thin film-type getter as a moisture absorbent to absorb moisture in the device in a predetermined region on the first substrate; Forming a first electrode made of a transparent material having transparency on the second substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic light emitting layer in units of subpixels; Connecting the first and second substrates to conductive spacers; The method of manufacturing an organic light emitting display device comprising the step of bonding the first and second substrates. The method according to claim 8 or 9, The thin film type getter is a method of manufacturing an organic light emitting device, characterized in that deposited by the sputtering method.

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