KR100543010B1 - 다결정 실리콘 박막의 제조 방법 및 이를 사용하여 제조된디스플레이 디바이스 - Google Patents
다결정 실리콘 박막의 제조 방법 및 이를 사용하여 제조된디스플레이 디바이스 Download PDFInfo
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- KR100543010B1 KR100543010B1 KR1020030073196A KR20030073196A KR100543010B1 KR 100543010 B1 KR100543010 B1 KR 100543010B1 KR 1020030073196 A KR1020030073196 A KR 1020030073196A KR 20030073196 A KR20030073196 A KR 20030073196A KR 100543010 B1 KR100543010 B1 KR 100543010B1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000002425 crystallisation Methods 0.000 abstract description 21
- 230000008025 crystallization Effects 0.000 abstract description 15
- 229920005591 polysilicon Polymers 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Silicon Compounds (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (12)
- 레이저가 투과하는 투과 패턴 그룹과 레이저가 투과하지 못하는 불투과 패턴 그룹이 혼합된 구조를 갖는 마스크를 사용하여 비정질 실리콘을 레이저를 이용하여 결정화하는 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법에 있어서,상기 마스크는 상기 불투과 패턴 그룹이 스캔 방향축과 수직으로 2 이상의 도트 패턴 그룹으로 이루어져 있으며 상기 도트 패턴 그룹은 일정한 형태를 이루며, 상기 도트 패턴 그룹이 스캔 방향축과 수직인 축 방향으로 서로 각각 일렬로 배열되지 않는 제 1 불투과 패턴 및 상기 제 1 불투과 패턴과 동일한 배열로 이루어지나 상기 제 1 불투과 패턴과 스캔 방향축의 수직축과 평행하게 위치하는 제 2 불투과 패턴을 포함하는 것을 특징으로 하는 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 1항에 있어서,상기 제 1 불투과 패턴 그룹은 스캔 방향축으로 일정 거리 쉬프트되는 경우 제 2 불투과 패턴의 도트 패턴이 일부분 중복되는 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 1항에 있어서,상기 제 1 불투과 패턴 및 제 2 불투과 패턴을 이루는 상기 도트 패턴 그룹 의 형태는 동일한 것인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 3항에 있어서,상기 형태는 정육각형인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 4항에 있어서,상기 제 1 및 제 2 불투과 패턴은 정사각형 형태의 패턴이 스캔 방향축과 수직의 방향으로 도트 패턴 그룹 사이에 형성되는 것인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 1항에서 있어서,상기 각 도트 패턴 그룹은 홀수 번째 행은 n개의 도트로, 짝수 번째 행은 n-1 개의 도트로 이루어지거나 홀수 번째 행은 n-1 개의 도트로, 짝수 번째 행은 n 개의 도트로 이루어지는 것인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 6항에 있어서,상기 n은 3 이상인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 6항에 있어서,상기 도트 패턴 그룹은 인접하는 도트 패턴 그룹은 대각선으로 서로 대칭인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 6항에 있어서,상기 제 1 및 제 2 불투과 패턴은 정사각형 형태의 패턴이 스캔 방향축과 수직의 방향으로 도트 패턴 그룹 사이에 형성되는 것인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
- 제 1항에 있어서,상기 마스크는 제 1 불투과 패턴과 동일한 패턴을 스캔 방향축과 수직인 축에 평행하게 1 이상 더 포함하는 것인 디스플레이 디바이스용 다결정 실리콘 박막의 제조 방법.
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030073196A KR100543010B1 (ko) | 2003-10-20 | 2003-10-20 | 다결정 실리콘 박막의 제조 방법 및 이를 사용하여 제조된디스플레이 디바이스 |
JP2004208964A JP4454421B2 (ja) | 2003-10-20 | 2004-07-15 | ディスプレーデバイス用シリコン薄膜の製造方法 |
US10/952,718 US7326295B2 (en) | 2003-10-20 | 2004-09-30 | Fabrication method for polycrystalline silicon thin film and apparatus using the same |
CNB2004101038159A CN100342495C (zh) | 2003-10-20 | 2004-10-20 | 多晶硅薄膜制造方法以及使用该多晶硅薄膜的设备 |
US11/949,483 US7642623B2 (en) | 2003-10-20 | 2007-12-03 | Fabrication method for polycrystalline silicon thin film and apparatus using the same |
Applications Claiming Priority (1)
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KR1020030073196A KR100543010B1 (ko) | 2003-10-20 | 2003-10-20 | 다결정 실리콘 박막의 제조 방법 및 이를 사용하여 제조된디스플레이 디바이스 |
Publications (2)
Publication Number | Publication Date |
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KR20050037912A KR20050037912A (ko) | 2005-04-25 |
KR100543010B1 true KR100543010B1 (ko) | 2006-01-20 |
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KR1020030073196A Expired - Lifetime KR100543010B1 (ko) | 2003-10-20 | 2003-10-20 | 다결정 실리콘 박막의 제조 방법 및 이를 사용하여 제조된디스플레이 디바이스 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7326295B2 (ko) |
JP (1) | JP4454421B2 (ko) |
KR (1) | KR100543010B1 (ko) |
CN (1) | CN100342495C (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI298111B (en) * | 2005-06-03 | 2008-06-21 | Au Optronics Corp | A mask used in a sequential lateral solidification process |
KR100796590B1 (ko) * | 2005-07-12 | 2008-01-21 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막의 제조 방법, 이에 사용되는 마스크패턴 및 이를 사용하는 평판 표시 장치의 제조 방법 |
KR100742380B1 (ko) | 2005-12-28 | 2007-07-24 | 삼성에스디아이 주식회사 | 마스크 패턴, 박막 트랜지스터의 제조 방법 및 이를사용하는 유기 전계 발광 표시 장치의 제조 방법 |
JP5109302B2 (ja) * | 2006-07-31 | 2012-12-26 | ソニー株式会社 | 表示装置およびその製造方法 |
US8654045B2 (en) | 2006-07-31 | 2014-02-18 | Sony Corporation | Display and method for manufacturing display |
CN102077318B (zh) * | 2008-06-26 | 2013-03-27 | 株式会社Ihi | 激光退火方法及装置 |
JP5540476B2 (ja) * | 2008-06-30 | 2014-07-02 | 株式会社Ihi | レーザアニール装置 |
JP5093815B2 (ja) * | 2009-02-13 | 2012-12-12 | 株式会社日本製鋼所 | アモルファス膜の結晶化方法および装置 |
JP2020021788A (ja) * | 2018-07-31 | 2020-02-06 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、薄膜トランジスタ、レーザーアニール方法及びマスク |
Family Cites Families (10)
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WO1997045827A1 (en) | 1996-05-28 | 1997-12-04 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
US5827773A (en) * | 1997-03-07 | 1998-10-27 | Sharp Microelectronics Technology, Inc. | Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon |
US6326286B1 (en) * | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
US6177391B1 (en) | 1999-05-27 | 2001-01-23 | Alam Zafar | One time use disposable soap and method of making |
EP1354341A1 (en) * | 2001-04-19 | 2003-10-22 | The Trustees Of Columbia University In The City Of New York | Method for single-scan, continuous motion sequential lateral solidification |
KR100379361B1 (ko) * | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | 실리콘막의 결정화 방법 |
KR100424593B1 (ko) | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법 |
US6767804B2 (en) * | 2001-11-08 | 2004-07-27 | Sharp Laboratories Of America, Inc. | 2N mask design and method of sequential lateral solidification |
KR100543007B1 (ko) * | 2003-10-14 | 2006-01-20 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막의 제조 방법 및 이를 사용하여 제조된디스플레이 디바이스 |
-
2003
- 2003-10-20 KR KR1020030073196A patent/KR100543010B1/ko not_active Expired - Lifetime
-
2004
- 2004-07-15 JP JP2004208964A patent/JP4454421B2/ja not_active Expired - Lifetime
- 2004-09-30 US US10/952,718 patent/US7326295B2/en not_active Expired - Lifetime
- 2004-10-20 CN CNB2004101038159A patent/CN100342495C/zh not_active Expired - Lifetime
-
2007
- 2007-12-03 US US11/949,483 patent/US7642623B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1619775A (zh) | 2005-05-25 |
KR20050037912A (ko) | 2005-04-25 |
CN100342495C (zh) | 2007-10-10 |
US20080073650A1 (en) | 2008-03-27 |
US7642623B2 (en) | 2010-01-05 |
US20050081780A1 (en) | 2005-04-21 |
US7326295B2 (en) | 2008-02-05 |
JP2005129895A (ja) | 2005-05-19 |
JP4454421B2 (ja) | 2010-04-21 |
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