KR100511943B1 - 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 - Google Patents
화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 Download PDFInfo
- Publication number
- KR100511943B1 KR100511943B1 KR10-2003-0032574A KR20030032574A KR100511943B1 KR 100511943 B1 KR100511943 B1 KR 100511943B1 KR 20030032574 A KR20030032574 A KR 20030032574A KR 100511943 B1 KR100511943 B1 KR 100511943B1
- Authority
- KR
- South Korea
- Prior art keywords
- cerium
- cerium oxide
- concentrate
- particles
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005498 polishing Methods 0.000 title claims abstract description 58
- 229910000420 cerium oxide Inorganic materials 0.000 title claims abstract description 53
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000012141 concentrate Substances 0.000 title claims abstract description 37
- 239000000126 substance Substances 0.000 title claims abstract description 12
- 239000002245 particle Substances 0.000 title claims description 51
- 239000000243 solution Substances 0.000 claims abstract description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000011882 ultra-fine particle Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000000703 Cerium Chemical class 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims abstract description 14
- 239000011148 porous material Substances 0.000 claims abstract description 10
- 239000012266 salt solution Substances 0.000 claims abstract description 10
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical group [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 16
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 11
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 8
- 229910052723 transition metal Inorganic materials 0.000 claims description 8
- 150000003624 transition metals Chemical class 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 7
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 238000004458 analytical method Methods 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000011164 primary particle Substances 0.000 claims description 4
- 238000004438 BET method Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- 238000003917 TEM image Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000002441 X-ray diffraction Methods 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 2
- 238000001878 scanning electron micrograph Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 17
- 239000008367 deionised water Substances 0.000 abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 abstract description 7
- 239000000654 additive Substances 0.000 abstract description 6
- 239000006185 dispersion Substances 0.000 abstract description 5
- 239000012895 dilution Substances 0.000 abstract 1
- 238000010790 dilution Methods 0.000 abstract 1
- 239000002612 dispersion medium Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229910017604 nitric acid Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 9
- 238000004255 ion exchange chromatography Methods 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 238000005119 centrifugation Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 238000001027 hydrothermal synthesis Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000035484 reaction time Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000000634 powder X-ray diffraction Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002651 NO3 Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- -1 alkali metal salts Chemical class 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 239000000538 analytical sample Substances 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 150000001785 cerium compounds Chemical class 0.000 description 3
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000004108 freeze drying Methods 0.000 description 2
- 238000010335 hydrothermal treatment Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000003921 particle size analysis Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229920000805 Polyaspartic acid Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000001509 aspartic acid derivatives Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000012970 cakes Nutrition 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 235000021463 dry cake Nutrition 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000875 high-speed ball milling Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010902 jet-milling Methods 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/90—Other properties not specified above
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geochemistry & Mineralogy (AREA)
- Mechanical Engineering (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
연마액 | 2차 입자평균입경 | 횟수 | 연마속도(Å/min) | 선택비 | |
산화규소막 | 질화규소막 | ||||
연마액 1(실시예 4) | 205nm | 1회 | 2524.3 | 38.5 | 65.6 |
2회 | 2564.5 | 39.2 | 65.4 | ||
연마액 2(실시예 5) | 223nm | 1회 | 3657.1 | 68.3 | 53.5 |
2회 | 3600.2 | 66.2 | 54.4 | ||
연마액 3(실시예 6) | 270nm | 1회 | 3848.5 | 98.6 | 39.0 |
2회 | 3824.3 | 97.9 | 39.1 | ||
연마액 4(비교예 2) | 293nm | 1회 | 3737.5 | 73.5 | 50.9 |
2회 | 3765.3 | 74.1 | 50.8 |
Claims (9)
- 250 내지 700℃의 반응온도 및 180 내지 550bar의 반응압력하에서, 연속반응기를 이용하여 예비가열 및 예비가압된 순수(deionized water), 전체 반응물에 대하여 0.01 내지 20중량%의 세륨염으로 구성된 금속염 수용액 및 암모니아 함유 유체를 0.01초 내지 10분 동안 반응시켜 산화세륨 초미립자 함유 용액을 얻고, 이를 0.01 내지 10㎛의 기공크기를 갖는 필터가 내장된 농축조에서 농축시키는 것을 특징으로 하는 화학·기계 연마용 산화세륨 초미립자 농축액의 제조방법.
- 제1항에 있어서, 상기 세륨염으로 구성된 금속염 수용액은 아연, 코발트, 니켈, 구리, 철, 알루미늄, 티탄, 바륨, 및 망간으로 이루어진 군으로부터 하나 이상 선택된 다른 수용성 금속염을 더욱 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 세륨염은 세륨질산염, 암모늄세륨질산염 또는 이들의 혼합물인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 암모니아 함유 유체의 암모니아 농도는 세륨염으로 구성된 금속염 수용액을 반응시 생성되는 질소화합물 농도에 대하여 0.5 내지 3.0몰비인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 초미립자는 X-선 회절법에 의한 결정립경에 대하여는 주 피크의 반값 폭(FWHM)이 0.016∼3.5˚이고, 셰러 방정식(Scherrer Equation)에 의한 결정자 크기 계산치가 1∼1000nm이며, SEM 또는 TEM 화상분석에 의한 일차입자의 평균입경이 1∼1000nm이고, BET법에 의한 비표면적이 2∼200 m2/g이며, TREO(total rare-earth oxide)가 99% 이상이고, CeO2/TREO가 95% 이상인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 산화세륨 초미립자 함유 용액은 1∼50중량%로 농축시키는 것을 특징으로 하는 방법.
- 제6항에 있어서, 상기 산화세륨 초미립자 함유 용액은 1∼30중량%로 농축시키는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 필터의 기공크기는 0.1 내지 5㎛인 것을 특징으로 하는 방법.
- 제1항의 방법으로 제조되며, 알칼리 금속 및 알칼리 토금속의 함량이 각각 10 ppm 이하, 전이금속 및 기타 불순물이 각각 10ppm 이하, 및 이온성 불순물의 함량이 각각 10ppm이하인 것을 특징으로 하는 화학·기계 연마용 산화세륨 초미립자 농축액.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0032574A KR100511943B1 (ko) | 2003-05-22 | 2003-05-22 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
TW093114427A TWI275631B (en) | 2003-05-22 | 2004-05-21 | Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof |
CNB2004800137615A CN100372905C (zh) | 2003-05-22 | 2004-05-21 | 一种用于化学机械抛光的二氧化铈细颗粒浓缩物及其制备方法 |
JP2006532059A JP4163233B2 (ja) | 2003-05-22 | 2004-05-21 | 化学機械研磨用セリア微粒子濃縮液およびその製造方法 |
US10/557,940 US7754168B2 (en) | 2003-05-22 | 2004-05-21 | Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof |
PCT/KR2004/001222 WO2004104134A1 (en) | 2003-05-22 | 2004-05-21 | Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0032574A KR100511943B1 (ko) | 2003-05-22 | 2003-05-22 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040100281A KR20040100281A (ko) | 2004-12-02 |
KR100511943B1 true KR100511943B1 (ko) | 2005-09-01 |
Family
ID=36788768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0032574A Expired - Fee Related KR100511943B1 (ko) | 2003-05-22 | 2003-05-22 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7754168B2 (ko) |
JP (1) | JP4163233B2 (ko) |
KR (1) | KR100511943B1 (ko) |
CN (1) | CN100372905C (ko) |
TW (1) | TWI275631B (ko) |
WO (1) | WO2004104134A1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100743457B1 (ko) * | 2005-08-23 | 2007-07-30 | 한화석유화학 주식회사 | 반도체 얕은 트렌치소자 연마용 산화세륨 초미립자 및 이의슬러리 제조방법 |
SG170807A1 (en) * | 2006-04-27 | 2011-05-30 | Asahi Glass Co Ltd | Fine particles of oxide crystal and slurry for polishing which contains the fine particles |
WO2008023858A1 (en) * | 2006-08-25 | 2008-02-28 | Hanwha Chemical Corporation | Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor |
KR101431512B1 (ko) * | 2007-08-27 | 2014-08-20 | 주식회사 동진쎄미켐 | 초임계 유체를 이용한 금속층의 기계화학적 연마방법 및장치 |
DE102008044646B4 (de) * | 2008-08-27 | 2011-06-22 | Siltronic AG, 81737 | Verfahren zur Herstellung einer Halbleiterscheibe |
US8192644B2 (en) * | 2009-10-16 | 2012-06-05 | Fujifilm Planar Solutions, LLC | Highly dilutable polishing concentrates and slurries |
CN101891235A (zh) * | 2010-07-17 | 2010-11-24 | 天津市化学试剂研究所 | 一种优级纯硫酸高铈的制备方法 |
JP2013021343A (ja) * | 2012-08-29 | 2013-01-31 | Fujimi Inc | Lpd低減剤、シリコンウエハの欠陥低減方法、及びシリコンウエハの製造方法 |
JP2013016832A (ja) * | 2012-08-29 | 2013-01-24 | Fujimi Inc | 研磨用組成物、lpd低減剤及びそれを用いたlpd低減方法 |
US8859428B2 (en) * | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
EP3099756A4 (en) * | 2014-01-31 | 2017-08-02 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) |
KR102463863B1 (ko) | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
CN108117842A (zh) * | 2016-11-30 | 2018-06-05 | 上海新昇半导体科技有限公司 | 一种化学机械抛光液及其制备方法 |
DE102018125754A1 (de) * | 2018-10-17 | 2020-04-23 | Leuchtstoffwerk Breitungen Gmbh | Erdalkalimetallsilikat-Leuchtstoff und Verfahren zum Verbessern der Langzeitstabilität eines Erdalkalimetallsilikat-Leuchtstoffes |
KR102007448B1 (ko) * | 2018-12-24 | 2019-08-05 | 주식회사 엔팩 | 산화세륨 나노입자의 제조방법 |
CN116200128A (zh) * | 2021-11-30 | 2023-06-02 | 安集微电子(上海)有限公司 | 一种制备氧化铈纳米复合物的方法、一种氧化铈纳米复合物及一种化学机械抛光液 |
CN114768813A (zh) * | 2022-04-21 | 2022-07-22 | 陕西科技大学 | 一种镍掺杂的二氧化铈/还原氧化石墨烯电催化剂及其制备方法 |
CN117987012A (zh) * | 2022-11-01 | 2024-05-07 | 中国科学院大连化学物理研究所 | 氧化铈抛光粉及制备和应用 |
CN118027820A (zh) * | 2022-11-01 | 2024-05-14 | 中国科学院大连化学物理研究所 | 一种氢氧化铈和氧化铈的混合抛光液及制备和应用 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593195B1 (fr) | 1986-01-22 | 1988-08-12 | Centre Nat Rech Scient | Nouvelles compositions particulaires d'oxyde de terre rare, leur preparation et leur application |
JPH062582B2 (ja) * | 1987-12-02 | 1994-01-12 | 多木化学株式会社 | 結晶質酸化第二セリウムゾル及びその製造法 |
US5279789A (en) * | 1988-12-23 | 1994-01-18 | Rhone-Poulenc Chimie | Ceric oxide particulates having improved morphology |
JP3047110B2 (ja) * | 1990-06-15 | 2000-05-29 | 株式会社東北テクノアーチ | 金属酸化物微粒子の製造方法 |
US5213177A (en) | 1991-12-19 | 1993-05-25 | Zexel-Gleason Usa, Inc. | Traction control system responsive to wheel speed fluctuations |
JP2777044B2 (ja) * | 1993-04-19 | 1998-07-16 | 日産化学工業株式会社 | バリウムフェライト微粒子の製造方法 |
TW311905B (ko) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
JP2746861B2 (ja) * | 1995-11-20 | 1998-05-06 | 三井金属鉱業株式会社 | 酸化セリウム超微粒子の製造方法 |
WO1997029510A1 (fr) | 1996-02-07 | 1997-08-14 | Hitachi Chemical Company, Ltd. | Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats |
US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
JPH10154672A (ja) | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JPH10106993A (ja) | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 基板の研磨法 |
JP2000160136A (ja) | 1998-11-30 | 2000-06-13 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨法 |
JP3992402B2 (ja) * | 1999-05-25 | 2007-10-17 | 株式会社コーセー | 金属酸化物固溶酸化セリウムからなる紫外線遮断剤並びにそれを配合した樹脂組成物及び化粧料 |
JP3793802B2 (ja) * | 2001-07-09 | 2006-07-05 | 独立行政法人物質・材料研究機構 | 個々の粒子がナノサイズに分離したセリア粉末の製造法 |
-
2003
- 2003-05-22 KR KR10-2003-0032574A patent/KR100511943B1/ko not_active Expired - Fee Related
-
2004
- 2004-05-21 JP JP2006532059A patent/JP4163233B2/ja not_active Expired - Fee Related
- 2004-05-21 TW TW093114427A patent/TWI275631B/zh not_active IP Right Cessation
- 2004-05-21 CN CNB2004800137615A patent/CN100372905C/zh not_active Expired - Fee Related
- 2004-05-21 WO PCT/KR2004/001222 patent/WO2004104134A1/en active Application Filing
- 2004-05-21 US US10/557,940 patent/US7754168B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI275631B (en) | 2007-03-11 |
JP2007503521A (ja) | 2007-02-22 |
US20070212289A1 (en) | 2007-09-13 |
KR20040100281A (ko) | 2004-12-02 |
US7754168B2 (en) | 2010-07-13 |
JP4163233B2 (ja) | 2008-10-08 |
CN1791654A (zh) | 2006-06-21 |
TW200426207A (en) | 2004-12-01 |
CN100372905C (zh) | 2008-03-05 |
WO2004104134A1 (en) | 2004-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100511943B1 (ko) | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 | |
JP4379725B2 (ja) | 微細な金属酸化物粒子の製造方法 | |
CN102596810B (zh) | 碳酸铈类化合物的制备方法和氧化铈的制备方法 | |
RU2414427C2 (ru) | Состав для полировки стекла на основе двуокиси церия и процесс для его изготовления | |
US7264787B2 (en) | Cerium oxide powder | |
WO2008023858A1 (en) | Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor | |
KR101075966B1 (ko) | 결정성 산화세륨 및 이의 제조 방법 | |
JP2010510157A (ja) | 有機溶媒を用いた酸化セリウム粉末の製造方法及びこの粉末を含むcmpスラリー | |
CN115403063A (zh) | 一种二氧化铈颗粒及其制备方法和应用 | |
KR100873945B1 (ko) | 미세 산화세륨 분말 그 제조 방법 및 이를 포함하는 씨엠피슬러리 | |
KR100743457B1 (ko) | 반도체 얕은 트렌치소자 연마용 산화세륨 초미립자 및 이의슬러리 제조방법 | |
KR100873940B1 (ko) | 고순도 산화세륨 분말 그 제조 방법 및 이를 포함하는씨엠피 슬러리 | |
JPH05132311A (ja) | 酸化第二セリウムゾルの製造方法 | |
US8216327B2 (en) | Method for preparing cerium carbonate | |
JP2003054945A (ja) | 高純度希土類酸化物の製造方法 | |
WO2009029279A2 (en) | Chemical synthesis and method to manufacture alkaline metal-aluminum phosphates | |
WO2009116806A1 (en) | Method for preparing cerium carbonate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20030522 |
|
PA0201 | Request for examination | ||
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20050621 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20050825 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20050826 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20080722 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20090624 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20100825 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20110825 Start annual number: 7 End annual number: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20120802 Start annual number: 8 End annual number: 8 |
|
FPAY | Annual fee payment |
Payment date: 20130813 Year of fee payment: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20130813 Start annual number: 9 End annual number: 9 |
|
FPAY | Annual fee payment |
Payment date: 20140708 Year of fee payment: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20140708 Start annual number: 10 End annual number: 10 |
|
FPAY | Annual fee payment |
Payment date: 20150826 Year of fee payment: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20150826 Start annual number: 11 End annual number: 11 |
|
FPAY | Annual fee payment |
Payment date: 20160715 Year of fee payment: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20160715 Start annual number: 12 End annual number: 12 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20180605 |