KR100466396B1 - Luminous Liquid Crystal Display - Google Patents
Luminous Liquid Crystal Display Download PDFInfo
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- KR100466396B1 KR100466396B1 KR1019950069612A KR19950069612A KR100466396B1 KR 100466396 B1 KR100466396 B1 KR 100466396B1 KR 1019950069612 A KR1019950069612 A KR 1019950069612A KR 19950069612 A KR19950069612 A KR 19950069612A KR 100466396 B1 KR100466396 B1 KR 100466396B1
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- porous silicon
- silicon layer
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 31
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 33
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
본 발명은 다공성 실리콘을 이용한 표시 장치에 관한 것으로서 특히 자외선이나 전자파가 주사될때 빛을 발생시킬 수 있는 다공성 실리콘을 이용한 표시 장치를 제공하는 것을 목적으로 한다.The present invention relates to a display device using porous silicon, and more particularly, to provide a display device using porous silicon capable of generating light when ultraviolet rays or electromagnetic waves are scanned.
본 발명의 다공성 실리콘을 이용한 표시 장치는 다공성 실리콘층, 상기의 다공성 실리콘층 위에 형성되는 ITO 전극, 상기의 ITO 전극을 대응하는 각각의 화소에 따라 구분해주는 절연체, 상기의 절연체 위에 부착되고 다공성 실리콘층이 발광할 때 그 빛에 의해 색상을 표시하는 칼라 필터층, 및 상기의 다공성 실리콘층에 빛을 주사하는 광학계를 포함하는 것을 특징으로 한다.(선택도: 제 3 도)In the display device using the porous silicon of the present invention, a porous silicon layer, an ITO electrode formed on the porous silicon layer, an insulator separating the ITO electrode according to each pixel corresponding thereto, and a porous silicon layer attached to the insulator It is characterized in that it comprises a color filter layer displaying the color by the light when the light is emitted, and an optical system for scanning the light into the porous silicon layer. (Selectivity: FIG. 3)
Description
본 발명은 액정표시장치에 관한 것으로, 특히, 자외선이나 전자파가 주사될 때 빛을 발생시킬 수 있는 다공성 실리콘을 이용한 발광형 액정에 관한 것이다.The present invention relates to a liquid crystal display device, and more particularly, to a light emitting type liquid crystal using porous silicon capable of generating light when ultraviolet rays or electromagnetic waves are scanned.
종래의 박막 트랜지스터를 이용한 액정 표시 장치는, 도 1에 도시되어 있는 바와 같이, 한 개의 픽셀 내에서 게이트 버스(1)와 데이터 버스(2)가 상호 층을 이루면 교차하고 상기 데이터 버스(2)에서 돌출되어 형성되는 드레인(3)은 소오스(4)와 대향하여 위치하고 상기 드레인(3)과 소오스(4)의 하부에는 에칭스토퍼(도시되지 않음) 및 비정질 실리콘 층(도시되지 않음) 사이에 두고 게이트전극(5)이 위치한다.In the conventional liquid crystal display using a thin film transistor, as shown in FIG. 1, when the gate bus 1 and the data bus 2 are layered in one pixel, the liquid crystal display device intersects and crosses the data bus 2. The protruding drain 3 is positioned to face the source 4 and is disposed between the drain 3 and the lower portion of the source 4 between an etching stopper (not shown) and an amorphous silicon layer (not shown). The electrode 5 is located.
그리고 ITO 전극(6)은 상기의 게이트 버스(1)과 데이터 버스(2)에 의해 둘러 싸여지도록 형성된다.The ITO electrode 6 is formed to be surrounded by the gate bus 1 and the data bus 2 described above.
또한 종래의 박막 트랜지스터 액정 표시 장치의 층상 구조는, 도 2에 도시되어 있는 바와 같이, 유리기판(7)과, 유기기판(7)상에 형성된 게이트전극(5)와, 유리기판(7)의 상부에서 게이트전극(5)를 둘러싸는 투명 절연막 층(8)과, 투명 절연막(8)의 상부에 순차적으로 형성된 비정질 실리콘층(9)과, 도핑된 비정질 실리콘층(10,10')과, 애칭스토퍼(도시되지 않음)와, 도핑된 비정질 실리콘층(10)을 개재하여 비정질 실리콘층(9)에 결합되는 드레인(3)과, 도핑된 비정질 실리콘층(10')을 개재하여 비정질 실리콘층(9)에 결합되는 소오스(4)와, 유기기판(7)상에 형성되며 도핑된 비정질 실리콘층(10')을 개재하여 소오스(4)에 결합되는 ITO 전극(6)과, 액정을 개재하여 유리기판(7)에 대향하도록 배치된 칼라 필터층(11)으로 구성된다.As shown in FIG. 2, the layer structure of the conventional thin film transistor liquid crystal display device includes a glass substrate 7, a gate electrode 5 formed on the organic substrate 7, and a glass substrate 7. A transparent insulating film layer 8 surrounding the gate electrode 5 at the top, an amorphous silicon layer 9 sequentially formed on the transparent insulating film 8, a doped amorphous silicon layer 10, 10 ', An amorphous silicon layer via an etched stopper (not shown), a drain 3 coupled to the amorphous silicon layer 9 via the doped amorphous silicon layer 10, and a doped amorphous silicon layer 10 '. A source 4 bonded to the source 9, an ITO electrode 6 formed on the organic substrate 7 and bonded to the source 4 via a doped amorphous silicon layer 10 ', and a liquid crystal interposed therebetween. And a color filter layer 11 arranged to face the glass substrate 7.
전술한 바와 같은 종래의 박막 트랜지스터를 이용한 액정 표시 장치는 박막트랜지스터의 게이트 전극(5)에 전압을 인가하게 되면 상기 박막트랜지스터의 드레인(3)과 소오스(4)가 도전되어 ITO전극(6)에 전류를 흘러 보내게 되고, 이에 따라 전류가 인가된 상기 ITO 전극은(6)은 전압을 발생시켜 상기 ITO 전극(6)의 상부에 위치하는 액정(도시되지 않음)의 배향을 변화시킴으로써 유리기판(7)의 하부에 위치한 편광판(도시되지 않음)을 통과한 빛을 통과 시키게 된다.In the liquid crystal display using the conventional thin film transistor as described above, when a voltage is applied to the gate electrode 5 of the thin film transistor, the drain 3 and the source 4 of the thin film transistor are electrically conductive to the ITO electrode 6. The current flows through the current, and accordingly, the ITO electrode 6 to which the current is applied generates a voltage to change the orientation of the liquid crystal (not shown) located on the upper portion of the ITO electrode 6. The light passing through the polarizer (not shown) located at the lower part of 7) is allowed to pass.
그리고, 상기 유리기판(7)의 하부에 위치한 편광판(도시되지 않음) 통과한 빛은 평광판, 유리기판(7), 투명한 ITO 전극(6), 액정(도시되지 않음), 칼라필터층(11)을 통과함으로써, 소정의 색상을 지니는 화상을 표시하게 된다.Then, the light passing through the polarizing plate (not shown) positioned below the glass substrate 7 may be a flat plate, a glass substrate 7, a transparent ITO electrode 6, a liquid crystal (not shown), and a color filter layer 11. By passing through, an image having a predetermined color is displayed.
따라서, 종래의 박막 트랜지스터 액정 표시 장치에서는 빛을 투과시키기 위하여 액정의 배향을 조정하는 전압을 인가하는 ITO 전극에 전류를 흐르게 하는 박막 트랜지스터가 필수적으로 요구되고 있다.Therefore, in the conventional thin film transistor liquid crystal display device, a thin film transistor is required that allows a current to flow through an ITO electrode that applies a voltage for adjusting the alignment of the liquid crystal in order to transmit light.
또한, 액정 표시 장치는 비 발광형으로 유리기판(7)의 하부에서 빛을 투사하는 백라이트(도시되지 않음)를 필요로 하게 된다.In addition, the liquid crystal display device requires a backlight (not shown) that projects light from the lower portion of the glass substrate 7 in a non-emission type.
따라서, 본 발명은 상기 문제점을 해결하기 위해 빛이 인가될 때 발광하는 성질을 지니는 다공성 실리콘을 사용함으로써, 액정 및 이 액정의 배향을 조정하기 위한 박막 트래지스터가 사용되지 않는 발광형 액정표시장치를 제공하는 것을 목적으로 한다.Accordingly, the present invention provides a liquid crystal display device in which a liquid crystal and a thin film transistor for adjusting the orientation of the liquid crystal are not used by using porous silicon having a property of emitting light when light is applied to solve the above problem. It aims to provide.
상기 목적을 달성하기 위한 본 발명의 발광형 액정표시장치는, 광원을 공급하는 광학계; 상기 광원을 공급받아 발광하는 다공성 실리콘층; 상기 다공성 실리콘층 위에 형성되는 복수와 ITO전극; 상기 다공성 실리콘층의 상부에 형성되며, 상기 복수의 ITO전극을 화소별로 절연시키는 절연체: 및 상기 다공성 실리콘층에 대향하며 액정을 개재하여 상기 절연체에 결합되고, 상기 다공성 실리콘층에서 발광된 빛을 수광하여 화상을 표시하는 칼라필터층을 구비하는 것을 특징으로 한다.The light emitting liquid crystal display device of the present invention for achieving the above object comprises an optical system for supplying a light source; A porous silicon layer which receives the light source and emits light; A plurality of ITO electrodes formed on the porous silicon layer; An insulator formed on the porous silicon layer and insulating the plurality of ITO electrodes pixel by pixel; and being coupled to the insulator via a liquid crystal facing the porous silicon layer and receiving light emitted from the porous silicon layer And a color filter layer for displaying an image.
(실시예)(Example)
이하, 첨부된 도면에 의거하여 본 발명의 바람직한 실시예를 보다 상세하게 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3은 본 발명의 일실시예에 따른 발광형 액정표시장치의 단면도이다.3 is a cross-sectional view of a light emitting liquid crystal display according to an exemplary embodiment of the present invention.
본 발명의 일실시예에 따른 발광형 액정표시장치는, 도 3에 나타낸 바와 같이, 광원을 공급하는 광학계(100)와, 다공성 실리콘층(102)과, 다공성 실리콘층(102)의 상부에 형성된 투명한 복수의 ITO 전극(104)과, 전기적 절연을 위해 상기 복수의 ITO 전극(104) 사이에 형성된 절연체(108)와, 다공성 실리콘층(102)에 대향하며 액정(106)을 개재하여 절연체(108)의 상부면에 부착되는 칼라필터층(110)으로 구성된다.As shown in FIG. 3, the light emitting liquid crystal display according to the exemplary embodiment of the present invention includes an optical system 100 for supplying a light source, a porous silicon layer 102, and an upper portion of the porous silicon layer 102. A plurality of transparent ITO electrodes 104, an insulator 108 formed between the plurality of ITO electrodes 104 for electrical insulation, and an insulator 108 opposing the porous silicon layer 102 via a liquid crystal 106 It consists of a color filter layer 110 attached to the upper surface of the).
다공성 실리콘층(102)은 실리콘 웨이퍼를 전극이 형성된 불화수소(HF) 베셀(Vessel)내에서 음극에 금, 백금을 사용하여 전기 분해를 행함으로써 생성된다.The porous silicon layer 102 is produced by electrolyzing a silicon wafer using gold and platinum at a cathode in a hydrogen fluoride (HF) vessel in which an electrode is formed.
이렇게 생성된 다공성 실리콘층(102)은 자외선 혹은 전자파가 입사될 때 발광하는 성질을 지니게 된다.The porous silicon layer 102 generated as described above has a property of emitting light when ultraviolet rays or electromagnetic waves are incident.
본 발명의 일실시예에 따른 발광형 액정표시장치의 제조방법을 도 3을 참조하여 설명하면 다음과 같다.A method of manufacturing a light emitting liquid crystal display according to an embodiment of the present invention will be described with reference to FIG. 3.
먼저, 다공성 실리콘층(102) 위에 화소 개수에 대응하여 투명한 복수의 ITO전극(104)을 형성한 다음 복수의 ITO 전극(104)간의 전기적 절연을 위해 상기 복수의 ITO 전극(104) 사이에 절연체(108)를 형성한다.First, a plurality of transparent ITO electrodes 104 are formed on the porous silicon layer 102 corresponding to the number of pixels, and then an insulator (between the plurality of ITO electrodes 104 is formed between the plurality of ITO electrodes 104 for electrical insulation. 108).
이와 같이, 상기 다공성 실리콘층(102), 복수의 ITO 전극(104) 및 절연체(108)를 포함한 하부 구조를 형성한 후 절연체(108)의 상부면에 칼라필터층(110)을 부착한다.As such, after forming a lower structure including the porous silicon layer 102, the plurality of ITO electrodes 104, and the insulator 108, the color filter layer 110 is attached to the upper surface of the insulator 108.
그 다음, 광원 즉, 자외선 혹은 전자파가 다공성 실리콘층(102)의 측면을 통해 공급될 수 있도록 상기 결과물의 측면에 광학계(100)를 설치한다.Then, the optical system 100 is installed on the side surface of the resultant light source, that is, ultraviolet rays or electromagnetic waves can be supplied through the side surface of the porous silicon layer 102.
이와 같은 본 발명의 일실시예에 따른 다공성 실리콘을 이용한에서는 광학계(100)에서 다공성 실리콘층(102)에 자외선 혹은 전자파를 투사하면 다공성 실리콘층(102)이 발광을 하게 된다. 이 발광된 빛은 ITO 전극(104), 액정(106)을 투과하여 칼라필터층(110)에 가해지고, 이에 따라 칼라필터층(110)은 다공성 실리콘층(102)으로부터 빛을 수광함에 의해 화상을 표시하게 된다.In the case of using the porous silicon according to an embodiment of the present invention as described above, the porous silicon layer 102 emits light by projecting ultraviolet rays or electromagnetic waves onto the porous silicon layer 102 in the optical system 100. The emitted light is transmitted to the color filter layer 110 through the ITO electrode 104 and the liquid crystal 106, and thus the color filter layer 110 receives an image from the porous silicon layer 102 to display an image. Done.
이상에서와 같이, 본 발명은 발광특성을 갖는 다공성 실리콘을 이용함으로써, 종래의 박막 트랜지스터 액정와 달리 박막 트래지스터가 불필요하게 되므로, 제조공정이 간이해지고, 또한, 백라이트를 대체하여 광학계를의 측면에 설치할 수 있으므로 두께가 감소하는 효과가 있다.As described above, the present invention uses a porous silicon having light emission characteristics, so that a thin film transistor is unnecessary, unlike a conventional thin film transistor liquid crystal, so that the manufacturing process is simplified, and an optical system is installed on the side of the backlight to replace the backlight. Since the thickness can be reduced.
도 1은 박막 트랜지스터를 사용한 종래의 액정표시장치의 한 픽셀의 평면도.1 is a plan view of one pixel of a conventional liquid crystal display device using a thin film transistor;
도 2는 박막 트랜지스터를 사용한 종래의 액정표시장치의 단면도.2 is a cross-sectional view of a conventional liquid crystal display device using a thin film transistor.
도 3은 본 발명의 일실시예에 따른 발광형 액정표시장치의 단면도.3 is a cross-sectional view of a light emitting liquid crystal display device according to an embodiment of the present invention;
*도면의 주요 부분에 대한 부호설명* Explanation of symbols on the main parts of the drawings
100: 광학계 102: 다공성 실리콘층100: optical system 102: porous silicon layer
104: ITO 전극 106: 액정104: ITO electrode 106: liquid crystal
108: 절연체 110: 칼라필터층108: insulator 110: color filter layer
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KR1019950069612A KR100466396B1 (en) | 1995-12-30 | 1995-12-30 | Luminous Liquid Crystal Display |
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KR1019950069612A KR100466396B1 (en) | 1995-12-30 | 1995-12-30 | Luminous Liquid Crystal Display |
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KR100466396B1 true KR100466396B1 (en) | 2005-04-08 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950021694A (en) * | 1993-12-20 | 1995-07-26 | 이헌조 | Optoelectronic integrated circuits and manufacturing method |
KR100191472B1 (en) * | 1994-03-01 | 1999-06-15 | 이토 기요시 | Manufacturing method of color filter and multicolor liquid crystal display |
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1995
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR950021694A (en) * | 1993-12-20 | 1995-07-26 | 이헌조 | Optoelectronic integrated circuits and manufacturing method |
KR100191472B1 (en) * | 1994-03-01 | 1999-06-15 | 이토 기요시 | Manufacturing method of color filter and multicolor liquid crystal display |
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