KR100465868B1 - Method for forming pattern of wafer - Google Patents
Method for forming pattern of wafer Download PDFInfo
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- KR100465868B1 KR100465868B1 KR10-2002-0027240A KR20020027240A KR100465868B1 KR 100465868 B1 KR100465868 B1 KR 100465868B1 KR 20020027240 A KR20020027240 A KR 20020027240A KR 100465868 B1 KR100465868 B1 KR 100465868B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
본 발명은 웨이퍼에 레지스트 패턴을 형성하는 현상 공정에 있어서, 상기 웨이퍼의 CD 문제가 발생하는 영역에서는 현상액을 적절한 횟수만큼 왕복 분사하여 CD가 작은 영역보다 과현상(Over Develop)시킴으로써 웨이퍼 내의 CD 균일도를 향상시킴으로써 반도체 소자의 수율을 향상시킬 수 있도록 하는 웨이퍼의 패턴 형성 방법에 관한 것이다.According to the present invention, in the development process of forming a resist pattern on a wafer, the CD uniformity in the wafer is improved by overdeveloping the developer by reciprocatingly spraying the developer a suitable number of times in the region where the CD problem of the wafer occurs. The present invention relates to a method of forming a wafer for improving the yield of semiconductor elements by improving.
Description
본 발명은 웨이퍼의 CD 문제가 발생하는 영역에서는 현상액을 적절한 횟수만큼 왕복 분사하여 CD가 작은 영역보다 과현상(Over Develop)시킴으로써 웨이퍼 내의 CD 균일도를 향상시키기 위한 웨이퍼의 패턴 형성 방법에 관한 것이다.The present invention relates to a method of forming a pattern of a wafer for improving CD uniformity in a wafer by overdeveloping a developer in an area where a CD problem occurs in the wafer by a reciprocating injection of the developer a proper number of times.
소자 패턴의 미세화에도 불구하고 반도체 웨이퍼 또는 포토마스크 등의 기판의 크기는 더욱 대형화되어 가고 있기 때문에, 대형화된 반도체 웨이퍼 또는 포토마스크의 내부에서 동일 반복적으로 형성되는 소자 패턴들의 CD(Critical Dimension)를 기판의 전체 위치에서 균일하게 형성 및 관리하는 것은 더욱 어렵고 중요한 일이 되어가고 있다. 특히, 포토마스크의 경우에는 포토마스크 상에 형성된 패턴의 이미지를 웨이퍼 상에 전사해주는 원판의 역할을 하기 때문에 CD의 균일도 관리는 더욱 중요한 것이다.Despite the miniaturization of device patterns, the size of substrates such as semiconductor wafers or photomasks is becoming larger. Therefore, CDs (Critical Dimensions) of device patterns that are repeatedly formed in the same size of semiconductor wafers or photomasks are enlarged. Forming and managing uniformly over the entire position is becoming more difficult and important. In particular, in the case of the photomask, the uniformity management of the CD is more important because it serves as an original plate which transfers an image of a pattern formed on the photomask onto a wafer.
웨이퍼내의 CD(Critical dimension)는 여러 가지 공정 요인에 의해 차이를 발생하게 되는 그 원인 중의 첫째가 사진 공정 이전의 CMP 공정시 동심원 방향으로 기울어져서 발생하게 되는 하부층의 모폴로지(Morphology)에 의한 것이다.CD (Critical dimension) in the wafer is the first cause of the difference caused by a variety of process factors is due to the morphology of the underlying layer that is caused by tilting in the concentric direction during the CMP process before the photo process (Cm).
또 다른 원인은 사진 공정의 문제점으로 첫째로 웨이퍼의 포토레지스트 코팅 방법으로 스핀 방식을 적용하고 있어 웨이퍼의 내, 외곽의 포토레지스트의 두께 차이로 인해 EOP(End Of Point) 차이가 발생하여 패터닝에 필요한 노광 에너지의 차이를 유발하게 된다.Another cause is the problem of the photo process. Firstly, the spin method is applied to the photoresist coating method of the wafer. Therefore, the difference of the thickness of the photoresist inside and the outside of the wafer causes EOP (End Of Point) difference, which is necessary for patterning. It causes a difference in exposure energy.
도1은 웨이퍼 외곽부의 CD 차이를 보상하기 위한 멀티 노광 방식의 문제점을 나타낸 도면으로 스핀 방식의 레지스트 코팅에 의해 웨이퍼(A)의 외곽부 CD가 동심원 띠의 모양으로 크게 나타나는 것을 보상하기 위하여 사진 노광 조건을 재설정하여 필드의 위치 별로 에너지 및 포커스를 세팅하게 된다.1 is a diagram illustrating a problem of a multi-exposure method for compensating for a difference in CD of an outer edge of a wafer. Photographic exposure is performed to compensate for the appearance of an outer CD of a wafer A in a concentric band shape by spin-type resist coating. By resetting the conditions, you set energy and focus for each field position.
즉, CD가 큰 외곽부의 필드를 선택하여 내부 필드보다 에너지를 증가시켜 노광하게 되는데 이러한 방식으로는 CD의 기울기를 적절하게 보상할 수 없고 오히려 외곽부와 내부 필드의 경계부근에서 심한 CD 에러(B)를 유발하게 되는 문제점이 있었다.In other words, it selects the outer field where the CD is larger and increases the energy than the inner field and exposes it. In this way, the slope of the CD cannot be compensated properly, but rather, the severe CD error (B There was a problem that caused).
도2은 종래 기술에 의한 웨이퍼 현상 방법에 의한 문제점을 나타낸 도면이다.2 is a view showing a problem caused by the wafer developing method according to the prior art.
종래의 현상 방식은 도2의 (가)에 나타난 바와 같이 웨이퍼 상부에 노즐을 이용하여 중앙에서 외곽부로 다시 외곽부에서 중앙으로 이동하면서 현상액(Developer)을 분사함으로써 웨이퍼의 내, 외곽 지역의 현상 정도의 차이가 발생하여 도2의 (나)에 나타난 바와 같이 웨이퍼 내, 외곽의 CD 편차가 발생하게 되는 문제점이 있었다.In the conventional development method, as shown in (a) of FIG. 2, the development degree in the inner and outer regions of the wafer is generated by spraying a developer while moving from the center to the outer part and from the outer part to the center using a nozzle on the wafer top. There was a problem that the difference between the occurrence of the CD deviation in the wafer, the inside of the wafer, as shown in (b) of FIG.
도3은 종래 기술에 의한 현상 공정 적용후 웨이퍼의 CD 분포를 나타낸 것이다.Figure 3 shows the CD distribution of the wafer after applying the developing process according to the prior art.
여기에 도시된 바와 같이 웨이퍼의 외곽부의 CD 분포를 살펴보면 웨이퍼의 외곽부인 A부분의 CD가 웨이퍼의 중앙의 CD에 비해 진하게 나타나는 것을 볼수 있어 웨이퍼의 외곽부 CD가 중앙에서 보다 크게 나타나는 것을 볼 수 있다.As shown here, when looking at the CD distribution of the outer edge of the wafer, it can be seen that the CD of the A portion, which is the outer edge of the wafer, appears thicker than the CD of the center of the wafer, so that the outer CD of the wafer appears larger in the center. .
본 발명은 상기와 같은 문제점을 해결하기 위해 창작된 것으로서, 본 발명의 목적은 웨이퍼에 레지스트 패턴을 형성하는 현상 공정에 있어서, 상기 웨이퍼의 CD문제가 발생하는 영역에서는 현상액을 적절한 횟수만큼 왕복 분사하여 CD가 작은 영역보다 과현상(Over Develop)시킴으로써 웨이퍼 내의 CD 균일도를 향상시키기 위한 웨이퍼의 패턴 형성 방법을 제공하는 것이다.The present invention has been made to solve the above problems, and an object of the present invention is to develop a resist pattern on a wafer, and in the region where the CD problem of the wafer occurs, It is to provide a wafer pattern formation method for improving CD uniformity in a wafer by over-developing the CD over a smaller area.
도1은 웨이퍼 외곽부의 CD 차이를 보상하기 위한 멀티 노광 방식의 문제점을 나타낸 도면이다.1 is a diagram illustrating a problem of a multi-exposure method for compensating for a CD difference in an outer portion of a wafer.
도2은 종래 기술에 의한 웨이퍼 현상 방법에 의한 문제점을 나타낸 도면이다.2 is a view showing a problem caused by the wafer developing method according to the prior art.
도3은 종래 기술에 의한 현상 공정 적용후 웨이퍼의 CD 분포를 나타낸 것이다.Figure 3 shows the CD distribution of the wafer after applying the developing process according to the prior art.
도4는 본 발명에 의한 웨이퍼의 패턴 형성 방법을 나타낸 도면이다.4 is a view showing a pattern formation method of a wafer according to the present invention.
도5는 본 발명에 의한 현상 공정 적용 후의 웨이퍼의 CD 분포를 나타낸 것이다.Fig. 5 shows the CD distribution of the wafer after application of the developing process according to the present invention.
상기와 같은 목적을 실현하기 위한 본 발명은 웨이퍼에 레지스트 패턴을 형성하는 현상 공정에 있어서, 상기 웨이퍼의 CD 문제가 발생하는 영역에서는 현상액을 적절한 횟수만큼 왕복 분사하여 CD가 상대적으로 작은 영역보다 과현상(Over Develop)시키는 것을 특징으로 하는 웨이퍼의 패턴 형성 방법에 관한 것이다.In the development process for forming a resist pattern on a wafer, the present invention for achieving the above object, in the region where the CD problem of the wafer occurs, reciprocating injection of the developer a suitable number of times over-development than the region where the CD is relatively small (Over Develop) relates to a method for forming a wafer pattern.
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명한다. 또한 본 실시예는 본 발명의 권리범위를 한정하는 것은 아니고, 단지 예시로 제시된 것이며 종래 구성과 동일한 부분은 동일한 부호 및 명칭을 사용한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the present embodiment is not intended to limit the scope of the present invention, but is presented by way of example only and the same parts as in the conventional configuration using the same reference numerals and names.
도4는 본 발명에 의한 웨이퍼의 패턴 형성 방법을 나타낸 도면이다.4 is a view showing a pattern formation method of a wafer according to the present invention.
도4는 (가)에 도시된 바와 같이 웨이퍼의 중앙 부분인 C에서 외곽부 A로 이동하면서 현상액을 분사하고 다시 웨이퍼의 외곽부 A에서 중앙 C로 이동하기 전에 웨이퍼의 외곽부의 CD가 문제가 되는 영역 B에서 현상액을 적절한 횟수만큼 왕복 분사하여 중앙 부분보다 웨이퍼의 외곽부를 과현상(Over Develop)하면 도4의 (나)에 도시된 바와 같이 웨이퍼 내의 CD가 균일하게 나타나는 것을 알 수 있다.Fig. 4 shows the problem that the CD of the outer edge of the wafer becomes a problem before spraying the developer while moving from the center portion C of the wafer to the outer portion A, as shown in (a). It can be seen that when the developer is reciprocated injected the appropriate number of times in the region B and overdeveloped the outer portion of the wafer rather than the central portion, the CD in the wafer appears uniform as shown in FIG.
이때, A에서 B 영역을 18회 왕복하면서 약 8초 정도 현상액을 분사하면서 스캐닝한다.At this time, scanning is carried out while spraying the developer for about 8 seconds while reciprocating the region A to B 18 times.
도5는 본 발명에 의한 현상 공정 적용 후의 웨이퍼의 CD 분포를 나타낸 것이다.Fig. 5 shows the CD distribution of the wafer after application of the developing process according to the present invention.
여기에 도시된 바와 같이 웨이퍼내의 CD가 웨이퍼 내에서 전체적으로 고르게 분포하는 것을 볼수 있어, 기존의 문제시 되는 웨이퍼 외곽부의 CD가 크게 나타나는 문제점이 해결되어 웨이퍼 외곽부의 CD가 크지 않고 균일하게 나타나는 것을 볼 수 있다.As shown here, it can be seen that the CD in the wafer is distributed evenly throughout the wafer, and the problem of the large CD of the outer edge of the wafer, which is a problem in the past, is solved. have.
본 발명의 또 다른 실시예로 도시되지는 않지만 웨이퍼의 외곽부 보다 중앙 부분에서 CD가 높게 나타나는 경우 웨이퍼의 중앙 부분에서 현상액을 적절히 왕복 분사하여 과현상 시킴으로써 CD 편차를 줄일 수 있다.Although not shown as another embodiment of the present invention, in the case where the CD is higher in the central portion than the outer portion of the wafer, the CD deviation may be reduced by appropriately reciprocating injection of the developer in the central portion of the wafer.
상기한 바와 같이 본 발명은 웨이퍼에 레지스트 패턴을 형성하는 현상 공정에 있어서, 상기 웨이퍼의 CD 문제가 발생하는 영역에서는 현상액을 적절한 횟수만큼 왕복 분사하여 과현상(Over Develop)시킴으로써 웨이퍼 내의 CD 균일도를 향상시킴으로써 반도체 소자의 수율을 향상시킬 수 있는 이점이 있다.As described above, in the development process of forming a resist pattern on a wafer, the CD uniformity in the wafer is improved by over developing by reciprocatingly spraying a developer a proper number of times in a region where a CD problem of the wafer occurs. By doing so, there is an advantage that the yield of a semiconductor element can be improved.
또한, 웨이퍼 외곽부 CD를 제어하기 위한 필드 단위의 에너지 보정등의 추가 공정을 필요하지 않으므로 새로운 기술이나 장비의 도입 없으므로 경제적인 이점이 있다.In addition, since there is no need for an additional process such as field-based energy correction for controlling the wafer outer side CD, there is an economical advantage because no new technology or equipment is introduced.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07283104A (en) * | 1994-04-06 | 1995-10-27 | Ryoden Semiconductor Syst Eng Kk | Chemical application device |
| KR970017949A (en) * | 1995-09-26 | 1997-04-30 | 김광호 | Coating method of photoresist film and photoresist coating device used therefor |
| KR970018118A (en) * | 1995-09-26 | 1997-04-30 | 김광호 | Photosensitive film developing method and apparatus |
| JPH10163161A (en) * | 1996-11-27 | 1998-06-19 | Toshiba Corp | Spin treatment apparatus |
| KR20000071551A (en) * | 1999-04-08 | 2000-11-25 | 히가시 데쓰로 | Film forming method and film forming apparatus |
| KR20010046719A (en) * | 1999-11-15 | 2001-06-15 | 윤종용 | Spinner Apparatus With Chemical Supply Nozzle, Method Of Forming Pattern And Method Of Etching Using The Same |
| KR20030052825A (en) * | 2001-12-21 | 2003-06-27 | 동부전자 주식회사 | A jet device for providing developer in the lithography process |
-
2002
- 2002-05-17 KR KR10-2002-0027240A patent/KR100465868B1/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07283104A (en) * | 1994-04-06 | 1995-10-27 | Ryoden Semiconductor Syst Eng Kk | Chemical application device |
| KR970017949A (en) * | 1995-09-26 | 1997-04-30 | 김광호 | Coating method of photoresist film and photoresist coating device used therefor |
| KR970018118A (en) * | 1995-09-26 | 1997-04-30 | 김광호 | Photosensitive film developing method and apparatus |
| JPH10163161A (en) * | 1996-11-27 | 1998-06-19 | Toshiba Corp | Spin treatment apparatus |
| KR20000071551A (en) * | 1999-04-08 | 2000-11-25 | 히가시 데쓰로 | Film forming method and film forming apparatus |
| KR20010046719A (en) * | 1999-11-15 | 2001-06-15 | 윤종용 | Spinner Apparatus With Chemical Supply Nozzle, Method Of Forming Pattern And Method Of Etching Using The Same |
| KR20030052825A (en) * | 2001-12-21 | 2003-06-27 | 동부전자 주식회사 | A jet device for providing developer in the lithography process |
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| KR20030089163A (en) | 2003-11-21 |
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