KR100434314B1 - Process for crystallizing amorphous silicon and its application - fabricating method of TFT-LCD - Google Patents

Abstract

The present invention relates to a polycrystallization method for improving the device characteristics of a thin film transistor by minimizing the amount of metal remaining on the polycrystalline silicon layer after crystallization, and a method for manufacturing the liquid crystal display device according to the present invention. Forming a buffer layer on the buffer layer, forming an amorphous silicon layer on the buffer layer, and forming a metal thin film layer on the amorphous silicon layer in a temperature range of 100 to 300 ° C. to react with the amorphous silicon layer to react with the metal silicide. Forming a layer, removing the amorphous silicon layer and the unreacted metal thin film layer, forming electrodes in left and right predetermined regions on the metal silicide layer, applying an electric field to the electrode, and simultaneously heat treating the substrate. Crystallizing the amorphous silicon layer.

Description

Polycrystallization method and manufacturing method of liquid crystal display using the same {Process for crystallizing amorphous silicon and its application-fabricating method of TFT-LCD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a polycrystalline silicon thin film transistor, and more particularly, to a polycrystallization method using an electric field applied metal induction crystallization method and a liquid crystal display device manufacturing method using the same.

Although TFT-LCDs have high density and large area, and display and driving circuits are fabricated on the same substrate, there is an urgent need for increasing mobility of thin film transistors, which are switching elements. It is difficult to satisfy this advantage with a thin film transistor (a-Si: H TFT).

Recently, polycrystalline silicon TFTs (Poly-Si TFTs) have attracted much attention as a method for effectively solving these problems. Since polycrystalline silicon TFTs have high mobility, they have the advantage of allowing peripheral circuits to be integrated on glass substrates, thus attracting much attention in terms of reducing production costs.

In addition, polycrystalline silicon TFTs have higher mobility than amorphous silicon TFTs, and are advantageous as switching elements of high-resolution panels, and are suitable for projection panels in which a lot of light is emitted due to less photocurrent compared to amorphous silicon TFTs.

There have been many reports on the method of fabricating polycrystalline silicon, and there are largely a method of directly depositing polycrystalline silicon and a method of forming polycrystalline silicon by depositing amorphous silicon and then crystallizing.

The former methods include Low Pressure Chemical Vapor Deposition (LPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD). Among them, the LPCVD method has a substrate temperature of 550 ° C. or higher. Due to the use of expensive silica or quartz, the manufacturing cost is high, which is not suitable for mass production. In the case of PECVD, the SiF ₄ / SiH ₄ / H ₂ mixed gas can be deposited at 400 ° C. or lower, but it is difficult to suppress the grains. It is known to have serious problems.

The latter method, that is, a method of depositing and crystallizing amorphous silicon includes a solid phase crystallization (SPC) method and an excimer laser annealing (ELA) method.

The ELA method is a method of crystallizing a thin film in an instant by administering an excimer laser having a strong energy in an amorphous silicon thin film to form a polycrystalline silicon thin film having a large crystal grain size and excellent crystallinity. This is possible. However, the ELA method requires an expensive accessory equipment, such as an excimer laser, and thus can be said to have a limitation in mass production and large area LCD driving TFTs.

Solid phase crystallization is mainly a method of crystallizing an amorphous silicon thin film by using a furnace heating method in a furnace. Likewise, polycrystalline silicon thin film having excellent crystallinity can be produced, but is crystallized because it proceeds by solid phase reaction. Due to the slow reaction rate, a long crystallization time of several tens of hours or more is required at a high temperature of 600 ° C. or more.

In addition to the above methods, a lot of research has recently been conducted to lower the crystallization temperature in order to use polycrystalline silicon in the manufacture of large-area liquid crystal display devices, one of which is a metal induced crystallization method and furthermore, Electric field enhanced metal induced crystallization (ESD), which applies an electric field to induction crystallization and improves the rate of crystallization, is also being studied.

According to these methods, when a specific type of metal is contacted with amorphous silicon, the crystallization temperature of the amorphous silicon can be lowered to 500 ° C. or lower, and the metal induction crystallization effect is known to occur in various kinds of metals.

Metal-induced crystallization differs in causing crystallization depending on the type of metal. That is, the crystallization phenomenon may vary depending on the type of metal in contact with the hydrogenated amorphous silicon (a-Si: H).

For example, metals such as aluminum (Al), gold (Au), and silver (Ag) are governed by the diffusion of silicon (Si) at the interface with amorphous silicon. In other words, at the interface between the metal and the silicon, a metastable silicide phase is formed by diffusion of silicon, and the silicide lowers the crystallization energy to promote the crystallization of silicon.

In contrast, in metals such as nickel (Ni) and titanium (Ti), diffusion of metals by annealing is dominant. That is, a silicide phase is formed by metal diffusion from the metal and silicon interface in the direction of the silicon layer, and the silicide promotes crystallization and lowers the crystallization temperature.

Hereinafter, a polycrystallization method according to the prior art will be described with reference to the accompanying drawings.

1A to 1C are cross-sectional views illustrating a method of crystallizing an amorphous silicon thin film according to the prior art.

As shown in FIG. 1A, a buffer layer 102 is formed of a silicon oxide film (SiO ₂ ) on an insulating substrate 101, an amorphous silicon 103 is deposited on the buffer layer, and then a metal thin film layer serving as a crystallization catalyst. 104 is formed in the amorphous silicon layer. Here, nickel (Ni) or the like is used as the metal thin film layer 104.

As shown in Fig. 1B, an electrode 105 for applying an electric field to the metal thin film layer is added. Molybdenum (Mo) is used as the material for the electrode.

Subsequently, a predetermined electric field is applied to the electrode 105, and at the same time, a heat treatment is performed. As shown in FIG. 1C, as a result of the crystallization of FIG. As a result, a silicide phase (NiSi ₂ ) is formed. The silicide (NiSi ₂ ) promotes crystallization of the silicon thin film to crystallize the amorphous silicon thin film into the polycrystalline silicon thin film 106 in a state where the crystallization temperature is lowered.

However, the conventional polycrystallization method as described above has the following problems.

When the crystallization process of the amorphous silicon layer to the polycrystalline silicon is completed, the metal that does not react with the amorphous silicon remains on the polycrystalline silicon layer has a disadvantage that adversely affects the characteristics of the thin film transistor element, such as causing leakage current.

The present invention has been made to solve the above problems, and an object thereof is to provide a polycrystallization method for improving the device characteristics of the thin film transistor by minimizing the amount of metal remaining on the polycrystalline silicon layer after crystallization.

Another object of the present invention is to provide a method for manufacturing a thin film transistor and a liquid crystal display using the polycrystallization method.

1A to 1C are cross-sectional views illustrating a method of crystallizing an amorphous silicon layer according to the prior art.

2A to 2D are cross-sectional views illustrating a method for crystallizing an amorphous silicon layer according to the present invention.

3A to 3G are cross-sectional views illustrating a method of manufacturing a thin film transistor using the polycrystallization method of the present invention.

4A to 4F are cross-sectional views illustrating a method of manufacturing a thin film transistor using the polycrystallization method of the present invention.

Explanation of symbols for the main parts of the drawings

201: insulating substrate 202: buffer layer

203: amorphous silicon layer 204a: unreacted metal

204b: metal silicide

The polycrystallization method of the present invention for achieving the above object comprises the steps of forming a buffer layer on an insulating substrate, forming an amorphous silicon layer on the buffer layer, the temperature range of 100 ~ 300 ℃ on the amorphous silicon layer Forming a metal thin film layer and reacting with the amorphous silicon layer to form a metal silicide layer, removing the amorphous silicon layer and an unreacted metal thin film layer, and forming electrodes on left and right predetermined regions on the metal silicide layer. And crystallizing the amorphous silicon layer by applying an electric field to the electrode and heat treating the substrate.

The method of manufacturing a thin film transistor using the above polycrystallization method includes forming a buffer layer on an insulating substrate, forming an amorphous silicon layer on the buffer layer, and a temperature of 100 to 300 ° C. on the amorphous silicon layer. Forming a metal thin film layer within a range to react with the amorphous silicon layer to form a metal silicide layer, removing the amorphous silicon layer and an unreacted metal thin film layer, and forming electrodes on left and right predetermined regions on the metal silicide layer And crystallizing the amorphous silicon layer by applying an electric field to the electrode and heat-treating the substrate, crystallizing the amorphous silicon layer, and then forming an island-like semiconductor layer; Forming a gate insulating film on the entire surface including a portion thereof; Forming a gate electrode, forming a source / drain region by ion doping a region in the semiconductor layer that does not overlap with the gate electrode, activating the semiconductor layer, and over the semiconductor layer and the gate electrode And forming a portion of the source / drain region after forming the interlayer insulating layer in the insulating layer, and forming a source electrode and a drain electrode to be connected to the exposed source / drain region.

In addition, the method of manufacturing a liquid crystal display device using the thin film transistor as described above may include preparing a first substrate and a second substrate, forming a buffer layer on the first substrate, and forming an amorphous silicon layer on the buffer layer. And forming a metal thin film layer on the amorphous silicon layer at a temperature in a range of 100 to 300 ° C. to react with the amorphous silicon layer to form a metal silicide layer, and removing the amorphous silicon layer and the unreacted metal thin film layer. Forming an electrode in left and right predetermined regions on the metal silicide layer, applying an electric field to the electrode, and heat treating a substrate to crystallize the amorphous silicon layer, and crystallizing the amorphous silicon layer. Thereafter, forming an island-like semiconductor layer, and forming a gate insulating film on the entire surface including the semiconductor layer. Forming a source / drain region by forming a gate electrode and gate lines at a predetermined portion on the gate insulating layer, doping a region not overlapping with the gate electrode in the semiconductor layer, and Forming a first insulating layer on the semiconductor layer and the gate electrode, exposing the source / drain region, and connecting the source / drain electrode and the data lines to be connected to the exposed source / drain region. And forming a pixel electrode electrically connected to the drain electrode, and forming a liquid crystal layer between the first substrate and the second substrate.

Hereinafter, a polycrystallization method and a method of manufacturing a thin film transistor using the same according to the present invention will be described with reference to the drawings.

2A through 2D are cross-sectional views illustrating a polycrystallization method according to the present invention, and FIGS. 3A through 3G are cross-sectional views illustrating a method of manufacturing a thin film transistor using the polycrystallization method of the present invention.

As shown in FIG. 2A, after forming the silicon oxide film buffer layer 202 on the insulating substrate 201, plasma chemical vapor deposition of SiH ₄ and H ₄ mixed gas on the buffer layer 202 is performed. The amorphous silicon (a-Si: H) layer 203 is formed using a chemical vapor deposition method. Subsequently, the metal thin film layer 204 is formed on the amorphous silicon 203 layer by using a sputtering method at 100 to 300 ° C. In this case, as the metal thin film layer 204, chromium (Cr), palladium (Pd), nickel (Ni), platinum (Pt), or the like is used, and the deposition thickness in order not to adversely affect the operation characteristics of the device after completion of the device. Is limited to trace amounts of 1.25 Å to 100 극.

At this time, the deposition of the metal thin layer proceeds at about 100 to 300 ° C., because the metal is deposited on the amorphous silicon layer and to promote the reaction with the amorphous silicon.

Here, the reaction mechanism between the metal and the amorphous silicon is that the metal diffuses into the amorphous silicon layer to form a compound called the metal and the amorphous silicon as the metal silicide.

For reference, the metal reacts with amorphous silicon even at room temperature to form metal silicide, but the reaction rate is very slow.

Thereafter, as shown in FIG. 2B, the metal thin film layer 204 deposited under the temperature of 100 to 300 ° C. reacts with amorphous silicon to form a metal silicide layer 204b, but some metals 204a do not react. It remains in the metal state.

The unreacted metal 204a plays a role of adversely affecting the characteristics of the thin film transistor device in the future, and thus needs to be processed.

The present invention is characterized in its processing, and the process is as follows.

Before forming the metal thin film layer, the amorphous silicon layer reacts with oxygen (O ₂ ) by an oxidizing atmosphere in the air to form a thin oxide film (SiO ₂ ) on the surface, commonly referred to as a native oxide film (Native SiO ₂ ). .

Since the metal thin film layer 104 formed on the amorphous silicon layer 103 is deposited to have a fine thickness, the metal thin film 104 is formed in a form in which metal atoms are embedded in the interface between the native oxide film or the native oxide film and the amorphous silicon layer 103. will be.

Therefore, by removing the native oxide film, it is possible to extract the unreacted metal.

The native oxide film is removed using wet etching using a mixed acid of hydrofluoric acid (HF) and hydrogen peroxide (H ₂ O ₂ ) as an etchant.

As shown in FIG. 2C, an electrode 205 for applying an electric field to the left and right predetermined regions on the metal silicide layer 204b is added. Molybdenum (Mo), graphite (Graphite) and the like are used as the material for the electrode 205.

The amorphous silicon layer is crystallized by applying an electric field having a predetermined condition to the electrode 205 and simultaneously heat-treating the substrate. At this time, it is preferable that the applied voltage is 30 to 100 V / cm, the application time is 15 minutes to 2 hours, and the heat treatment temperature of the substrate is set to 300 to 580 ° C.

As shown in FIG. 2D, the amorphous silicon layer is crystallized into the polycrystalline silicon layer 206 by the crystallization process of FIG. 2C. The crystallization process is as follows.

The metal thin film layer is solid phase diffused to an amorphous silicon layer to form metal silicide. For example, nickel (Ni) forms nickel silicide (NiSi ₂ ). At this time, since the hydrogen component of the amorphous silicon is removed, the reaction between the metal and the amorphous silicon can be maximized.

The metal silicide acts as a catalyst for crystallization of amorphous silicon, that is, a crystallization nucleus, and uniform crystallization of amorphous silicon proceeds at a high crystallization rate due to the crystallization nucleus.

Referring to the thin film transistor manufacturing process using the polycrystallization method as follows.

3A to 3G are cross-sectional views illustrating a method of manufacturing a thin film transistor using a polycrystallization method according to the present invention.

As shown in FIG. 3A, the buffer layer 202 and the amorphous silicon layer (a-Si: H) 203 made of silicon oxide (SiO ₂ ) material are sequentially formed on the insulating substrate 201 using chemical vapor deposition. Form. The buffer layer 202 prevents the impurity component of the glass substrate from diffusing into the amorphous silicon layer 203.

As shown in FIG. 3B, the metal thin film layer 204 is formed on the amorphous silicon layer 203 using a sputtering method at about 100 to 300 ° C. In this case, as the metal thin film layer 204, chromium (Cr), palladium (Pd), nickel (Ni), platinum (Pt), and the like are used, and in order not to adversely affect the operation characteristics of the device after the completion of the deposition thickness is It is limited to the trace amount of 1.25 ~ 100Å.

At this time, the deposition of the metal thin film layer 204 proceeds at about 100 to 300 ° C., because the metal is deposited on the amorphous silicon layer 203 and at the same time to promote the reaction with the amorphous silicon.

Under the above temperature conditions, the amorphous silicon layer 203 and the metal thin film layer 204 react to form the silicide layer 204b.

Next, as shown in FIG. 3C, the unreacted metal 204a on the silicide layer 204b is removed. That is, the unreacted metal 204a is extracted by removing the native oxide film, which is a natural oxide film of the amorphous silicon layer, by using an etchant as a mixed acid of hydrofluoric acid (HF) and hydrogen peroxide (H ₂ O ₂ ).

As shown in FIG. 3D, an electrode 205 for applying an electric field to the left and right regions on the silicide layer is added. At this time, as the material for the electrode 205, molybdenum (Mo), graphite (Graphite) and the like are used.

Thereafter, an electric field having a predetermined condition is applied to the electrode 205, and at the same time, the insulating substrate is heat-treated to crystallize the amorphous silicon layer 203. At this time, the voltage applied to the electrode 205 is 30 ~ 100V / cm, the application time is 15 minutes to 2 hours, the heat treatment temperature of the substrate is preferably set to 300 ~ 580 ℃.

After the crystallization of the amorphous silicon layer 203 into the polycrystalline silicon layer 206 through this process, as shown in FIG. 3E, the polycrystalline silicon layer 206 is patterned into islands, and then the polycrystalline silicon layer A gate insulating film 207 made of silicon oxide film or silicon nitride film is formed on the entire surface of the substrate including 206. Subsequently, a double metal layer of AlNd and Mo is sequentially stacked on the gate insulating layer 207 by sputtering, and then patterned to form a gate electrode 208 having a double layer structure.

3F, n + ions are implanted into the polycrystalline silicon layer 206 on both sides of the gate electrode 208 through an ion implantation process using the gate electrode 208 as a mask to form a source / drain region. After the formation and activation at a temperature lower than the crystallization temperature, an interlayer insulating film 209 is formed on the entire surface of the substrate including the gate electrode 208.

Subsequently, as illustrated in FIG. 3G, a via hole is formed by etching the interlayer insulating film 209 and the gate insulating film 207 to expose a predetermined region of the n + ion-doped polycrystalline silicon layer 206. After stacking the metal layers of AlNd and Mo in order to sufficiently fill the via holes, and forming the source / drain electrodes 210 and 211 by patterning, the thin film transistor manufacturing process using the polycrystallization method according to the present invention is performed. Is complete.

Hereinafter, a method of manufacturing a liquid crystal display using the above-described thin film transistor manufacturing process will be described.

4A to 4F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

As shown in FIG. 4A, after forming the buffer layer 202 made of silicon oxide film on the first substrate 201a, the plasma chemical vapor deposition method using SiH ₄ and H ₄ mixed gas is performed on the buffer layer 202. An amorphous silicon layer 203 is formed.

Thereafter, as shown in FIG. 4B, the amorphous silicon layer 203 is crystallized into the polycrystalline silicon layer 206 through the above-described crystallization process, and then used as a channel layer of the thin film transistor, as shown in FIG. 4C. It is patterned into islands to make it possible. Thereafter, after forming the gate insulating film 207 made of silicon nitride film or silicon oxide film on the entire surface including the island-like polycrystalline silicon layer 206, after laminating a double metal layer of AlNd and Mo on the gate insulating film, Patterning forms a gate electrode 208 and a gate line (not shown) of the thin film transistor.

Thereafter, as shown in FIG. 4D, n + ions are implanted into the polycrystalline silicon layer 206 using the gate electrode 208 as a mask to form and activate a source / drain region, and then the gate electrode 208 and An interlayer insulating film 209 is formed on the entire surface including the gate line.

Subsequently, as shown in FIG. 4E, the interlayer insulating film 209 and the gate insulating film 207 are sequentially removed so that a predetermined portion of the source / drain region of the polysilicon layer 206 implanted with the n + ion is exposed. After the formation, the AlNd and Mo double metal films are formed to sufficiently fill the via holes, and then patterned to form the source electrode 210 and the drain electrode 211 of the thin film transistor.

Thereafter, as shown in FIG. 4F, the first passivation layer 212 made of silicon nitride and the second passivation layer 213 made of benzocyclobutene (BCB) are sequentially stacked on the entire surface including the source / drain electrodes 210 and 211. After that, a contact hole is formed to expose the drain electrode 211.

Thereafter, a transparent conductive film such as indium tin oxide (ITO) is formed on the entire surface of the substrate including the contact hole, and then patterned to form a pixel electrode 214 electrically connected to the drain electrode 211 through the contact hole. .

Subsequently, although not shown in the drawings, a liquid crystal layer is formed between the first substrate 201a and the second substrate opposite to the manufacturing process of the liquid crystal display device according to the present invention.

Here, a color filter layer for expressing color is formed on the second substrate, and a black matrix pattern is formed to prevent light from being transmitted to the thin film transistor, the gate line, and the data line formed on the first substrate 201a. The common electrode for applying an electrical signal to the liquid crystal layer is formed together with the pixel electrode 214.

As described above, the polycrystallization method of the present invention and the manufacturing method of the liquid crystal display device using the same have the following effects.

By minimizing the amount of metal remaining on the polycrystalline silicon layer after the crystallization process, there is an advantage of improving device characteristics of the thin film transistor.

Claims (14)

Forming a buffer layer on the insulating substrate; Forming an amorphous silicon layer on the buffer layer; Forming a metal thin film layer on the amorphous silicon layer at a temperature in a range of 100 to 300 ° C. to react with the amorphous silicon layer to form a metal silicide layer; Removing the amorphous silicon layer and the unreacted metal thin film layer; Forming electrodes in left and right predetermined regions on the metal silicide layer; And applying an electric field to the electrode and performing a heat treatment process to crystallize the amorphous silicon layer. The polycrystallization method according to claim 1, wherein the unreacted metal thin film layer is extracted using a mixed acid of hydrofluoric acid and hydrogen peroxide. The polycrystallization method according to claim 1, wherein the metal thin film layer has a thickness of about 1.25 to about 100 GPa. The polycrystallization method according to claim 1, wherein the metal thin film layer is formed of any one of chromium (Cr), palladium (Pd), nickel (Ni), and platinum (Pt). The method of claim 1, wherein the electrode is formed of molybdenum (Mo) or graphite (Graphite). The method of claim 1, wherein crystallizing the amorphous silicon, The voltage applied to the electrode is 30 to 100V / cm, the time to apply is 15 minutes to 2 hours, the heat treatment temperature is in the range of 300 to 580 ℃ characterized in that the polycrystallization method. Preparing a first substrate and a second substrate, Forming a buffer layer on the first substrate; Forming an amorphous silicon layer on the buffer layer; Forming a metal silicide layer by forming a metal thin film layer on the amorphous silicon layer at a temperature in a range of 100 to 300 ° C. and reacting with the amorphous silicon layer; Removing the amorphous silicon layer and the unreacted metal thin film layer; Forming electrodes in left and right predetermined regions on the metal silicide layer; Applying an electric field to the electrode and heat treating the substrate to crystallize the amorphous silicon layer; Crystallizing the amorphous silicon layer, and then forming an island-like semiconductor layer; Forming a gate insulating film on the entire surface including the semiconductor layer; Forming gate electrodes and gate lines at predetermined portions on the gate insulating film; Forming a source / drain region by doping ions in the semiconductor layer; Activating the semiconductor layer; Forming an interlayer insulating film on the semiconductor layer and the gate electrode, and then exposing a portion of the source / drain region; Forming source / drain electrodes and data lines to be connected to the exposed semiconductor layer; Forming a pixel electrode electrically connected to the drain electrode; And forming a liquid crystal layer between the first substrate and the second substrate. The method of claim 7, wherein the step of crystallizing the amorphous silicon layer, A method for manufacturing a liquid crystal display device, wherein the voltage applied to the electrode is in the range of 30 to 100 V / cm, the application time is 15 minutes to 2 hours, and the heat treatment temperature is in the range of 300 to 580 ° C. The method of claim 7, wherein the metal thin film layer has a thickness in the range of 1.25 to 100 GPa. The method of claim 7, wherein the metal thin film layer is formed of any one of chromium (Cr), palladium (Pd), nickel (Ni), and platinum (Pt). The method of claim 7, wherein the electrode is formed of one of molybdenum (Mo) and graphite. The method of claim 7, wherein the unreacted metal thin film layer is extracted using a mixed acid of hydrofluoric acid and hydrogen peroxide. The method of claim 7, wherein the source / drain electrodes are formed of a double layer of AlNd and Mo. The method of claim 7, wherein Forming a silicon nitride film and a double insulating film of BCB on the entire surface including the source / drain electrodes; And partially connecting the pixel electrode to the pixel electrode by partially etching the double insulating layer to expose the drain electrode.