KR100327475B1 - 단결정연속성장장치 - Google Patents
단결정연속성장장치 Download PDFInfo
- Publication number
- KR100327475B1 KR100327475B1 KR1019950026932A KR19950026932A KR100327475B1 KR 100327475 B1 KR100327475 B1 KR 100327475B1 KR 1019950026932 A KR1019950026932 A KR 1019950026932A KR 19950026932 A KR19950026932 A KR 19950026932A KR 100327475 B1 KR100327475 B1 KR 100327475B1
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- raw material
- container
- growth apparatus
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
- 2중 구조를 가지는 용기와, 상기 용기내부로 원료를 공급하기 위한 원료공급기, 상기 용기를 가열하는 가열수단, 상기 용기의 상부에서 종자결정을 지지하여 승강가능하도록 마련되는 제1지지수단 및 상기 가열수단과 상기 종자결정 지지수단을 상관적으로 제어하는 제어수단을 포함하여 이루어진 단결정 연속 성장 장치에 있어서,상기 원료공급기는 상기 제어수단에 의해 제어되는 투입원료량 조절수단을 구비하며, 상기 용기는 그 하부가 상기 제어수단에 연결되어 제어되는 제2지지수단에 지지되어 이루어진 것을 특징으로 하는 단결정 연속 성장장치.
- 제1항에 있어서,상기 조절수단은 전자밸브인 것을 특징으로.하는 하는 단결정 연속 성장장치.
- 제1항에 있어서,상기 제1지지수단 및 제2지지수단은 중량 감지가 가능하게 된 로드셀로 이루진 것을 특징으로 하는 단결정 연속 성장장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950026932A KR100327475B1 (ko) | 1995-08-28 | 1995-08-28 | 단결정연속성장장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950026932A KR100327475B1 (ko) | 1995-08-28 | 1995-08-28 | 단결정연속성장장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970011028A KR970011028A (ko) | 1997-03-27 |
KR100327475B1 true KR100327475B1 (ko) | 2002-06-29 |
Family
ID=37478413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950026932A Expired - Fee Related KR100327475B1 (ko) | 1995-08-28 | 1995-08-28 | 단결정연속성장장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100327475B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101270071B1 (ko) * | 2011-06-30 | 2013-06-04 | (주)세미머티리얼즈 | 실리콘 연속 주조 장치 및 방법 |
KR101420840B1 (ko) | 2012-02-24 | 2014-07-17 | 주식회사 사파이어테크놀로지 | 사파이어 단결정 성장방법 |
KR20220157506A (ko) * | 2020-04-20 | 2022-11-29 | 쉬저우 신징 세미컨덕터 테크놀러지 컴퍼니 리미티드 | 결정 성장 과정에서 온도 제어를 위한 방법 및 시스템 |
-
1995
- 1995-08-28 KR KR1019950026932A patent/KR100327475B1/ko not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101270071B1 (ko) * | 2011-06-30 | 2013-06-04 | (주)세미머티리얼즈 | 실리콘 연속 주조 장치 및 방법 |
KR101420840B1 (ko) | 2012-02-24 | 2014-07-17 | 주식회사 사파이어테크놀로지 | 사파이어 단결정 성장방법 |
KR20220157506A (ko) * | 2020-04-20 | 2022-11-29 | 쉬저우 신징 세미컨덕터 테크놀러지 컴퍼니 리미티드 | 결정 성장 과정에서 온도 제어를 위한 방법 및 시스템 |
KR102713790B1 (ko) * | 2020-04-20 | 2024-10-04 | 중환 어드밴스드 세미컨덕터 메테리얼즈 컴퍼니 리미티드 | 결정 성장 과정에서 온도 제어를 위한 방법 및 시스템 |
Also Published As
Publication number | Publication date |
---|---|
KR970011028A (ko) | 1997-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1261715A (en) | Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique | |
EP0537988B1 (en) | An apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus | |
JP2008531444A (ja) | 単結晶シリコンにおける連続的成長用システム | |
KR100669300B1 (ko) | 다결정 실리콘 충전물로부터 용융된 실리콘 용융체를제조하는 방법 및 장치 | |
JPH02133389A (ja) | シリコン単結晶の製造装置 | |
KR920009562B1 (ko) | 실리콘 단결정의 제조방법 및 제조장치 | |
JPH1029894A (ja) | 単結晶シリコンの比抵抗調整方法および単結晶シリコン製造装置 | |
KR100327475B1 (ko) | 단결정연속성장장치 | |
US5785758A (en) | Single crystal growing apparatus | |
JP2001240485A (ja) | 単結晶引上方法及び単結晶引上装置 | |
JPH01286987A (ja) | 単結晶の製造方法及び装置 | |
US5551978A (en) | Apparatus for producing single crystal | |
KR102740644B1 (ko) | 잉곳 성장 장치 및 잉곳 성장 제어 방법 | |
JPS62246894A (ja) | 単結晶の製造方法及びその装置 | |
JPS5836997A (ja) | 単結晶製造装置 | |
JPH07133185A (ja) | 単結晶の製造方法 | |
JPS61132583A (ja) | 半導体単結晶体の製造方法 | |
JPH07110798B2 (ja) | 単結晶製造装置 | |
JP2615968B2 (ja) | 単結晶の引き上げ方法 | |
JPS61174189A (ja) | 単結晶の製造方法および装置 | |
JPH08301687A (ja) | 棒状多結晶シリコンの溶解方法及びその装置 | |
JP2004203634A (ja) | 半導体単結晶製造方法 | |
JPH09208360A (ja) | 単結晶の成長方法 | |
JPH01212293A (ja) | 結晶成長方法 | |
JPS63252993A (ja) | 単結晶の育成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
A201 | Request for examination | ||
PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
FPAY | Annual fee payment |
Payment date: 20110103 Year of fee payment: 10 |
|
PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20120223 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20120223 |
|
P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |