KR100319888B1 - 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법 - Google Patents
선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법 Download PDFInfo
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Abstract
Description
화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) |
Al2Cl6 | -1121.9 | HfCl3 | -626.7 | BeCl2 | -373.1 |
ThCl4 | -895.8 | EuCl3 | -621.6 | BCl3 | -367.7 |
UCl5 | -811.9 | YbCl3 | -621.5 | SiCl3 | -365.7 |
HfCl4 | -804.7 | K2Cl2 | -609.8 | SnCl4 | -362.3 |
ZrCl4 | -777.6 | Rb2Cl2 | -607.6 | InCl3 | -335.8 |
LaCl3 | -708.9 | Li2Cl2 | -597.8 | AlCl2 | -305.5 |
PrCl3 | -706.9 | SiCl4 | -569.6 | TaCl3 | -300.1 |
In2Cl6 | -703.7 | AlCl3 | -550.1 | GeCl3 | -299.8 |
CeCl3 | -699.5 | Fe2Cl6 | -526.8 | MnCl2 | -286.4 |
NdCl3 | -696.6 | BaCl2 | -524.3 | WCl5 | -285.6 |
Be2Cl4 | -692.6 | SrCl2 | -498.1 | CsCl | -276.7 |
TiCl4 | -678.3 | TaCl4 | -497.5 | ZnCl2 | -273.5 |
GdCl3 | -674.3 | CaCl2 | -489.1 | WCl4 | -267.6 |
TbCl3 | -668.1 | PbCl4 | -462.1 | Ti2Cl2 | -259.8 |
HoCl3 | -659.7 | VaCl4 | -447.2 | GaCl2 | -258.4 |
ErCl3 | -651.7 | GeCl4 | -410.8 | SbCl5 | -249.9 |
Cs2Cl2 | -644.1 | MgCl2 | -407.8 | Cu3Cl3 | -242.9 |
TmCl3 | -641.5 | Fe2Cl4 | -406.5 | PCl3 | -242.3 |
TaCl5 | -636.6 | GaCl3 | -388.6 | FeCl3 | -240.6 |
화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) |
ThI4 | -512 | ZrI4 | -409 | TiI4 | -320 |
Al2I6 | -510 | HfI4 | -405 | PbI4 | -266 |
K2I2 | -480 | DyI3 | -402 | MgI2 | -239 |
LaI3 | -457 | TmI3 | -399 | CuI | -237 |
PrI3 | -448 | GdI3 | -388 | CsI | -220 |
CeI3 | -442 | BaI2 | -380 | TaI5 | -202 |
NdI3 | -438 | UI4 | -377 | SiI4 | -150 |
Li2I2 | -427 | SrI2 | -353 | HI | -11.8 |
ErI3 | -410 | CaI2 | -338 | - | - |
화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) |
Al2Br6 | -860 | HoBr3 | -567 | CaBr2 | -435 |
Mg2Br4 | -764 | ErBr3 | -566 | PbBr4 | -428 |
ThBr4 | -743 | TmBr3 | -563 | TaBr5 | -424 |
HfBr4 | -639 | TbBr3 | -559 | EuBr2 | -413 |
ZrBr4 | -627 | DyBr3 | -559 | SiBr4 | -387 |
LaBr3 | -621 | GdBr3 | -551 | Cu3Br3 | -187 |
CeBr3 | -616 | Li2Br2 | -534 | WBr6 | -139 |
PrBr3 | -612 | TiBr4 | -527 | HBr | -58.6 |
UBr4 | -602 | Na2Br2 | -510 | - | - |
NdBr3 | -598 | SrBr2 | -453 | - | - |
화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) |
Al2F6 | -2439 | HfF4 | -1592 | Li3F3 | -1457 |
UF6 | -1953 | ZrF4 | -1587 | PrF3 | -1231 |
TaF5 | -1687 | S2F10 | -1581 | AsF5 | -1080 |
ThF4 | -1687 | SiF4 | -1515 | CuF2 | -287.3 |
Mg2F4 | -1624 | WF6 | -1513 | HF | -277.1 |
NbF5 | -1607 | TiF4 | -1467 | - | - |
화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) | 화합물 | 깁스자유에너지(kJ/mol) |
PtCl2 | -78.6 | PtCl3 | -105.9 | PtCl4 | -141.9 |
PtBr2 | +29.2 | PtBr3 | +27.3 | PtBr4 | -38.2 |
PtI4 | +62.8 | - | - | - | - |
Claims (27)
- 절연막 및 도전층이 형성된 반도체 기판에 있어서,상기 절연막과 도전층에 대해 선택적으로 증착되는 특성을 지닌 희생금속 소스가스를 공급하여 상기 도전층 위에만 희생금속층을 형성하는 공정; 및상기 희생금속층의 금속원자보다 더 작은 할로겐 겹합력을 갖는 금속 할로겐화합물 가스를 공급하여 상기 희생금속층을 증착금속층으로 치환하는 공정을 구비하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 1항에 있어서,상기 희생금속 소스가스를 공급하기 전에 퍼지가스(purge gas)를 공급하는 공정을 더 포함하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 1항에 있어서,상기 희생금속층을 형성후에 퍼지가스를 공급하는 단계와, 상기 희생금속층이 금속증착층으로 치환된 후에 퍼지가스를 공급하는 단계를 더 포함하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 3항에 있어서,상기 희생금속층을 형성하는 단계와,상기 희생금속층을 형성후에 퍼지가스를 공급하는 단계와,상기 희생금속층을 금속증착층으로 치환하는 단계와,상기 희생금속층이 금속증착층으로 치환한 후에 퍼지를 가스를 공급하는 단계를 반복함으로써 원하는 두께를 갖는 금속증착층을 형성하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 1항에 있어서,상기 절연막은 산화막(SiO2)또는 산화막을 포함하는 복합막을 사용하여 형성하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 1항에 있어서,상기 도전층은 불순물이 도핑된 실리콘 또는 금속을 사용하여 형성하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 6항에 있어서,상기 불순물이 도핑된 실리콘은 말단기가 수소를 포함하는 것(Hydrogen termination)을 특징으로 하는 선택적 금속층 형성방법.
- 제 6항에 있어서,상기 금속은 고융점금속, 고융점금속의 질화물, 고융점금속의 탄화물, 금속실리사이드, 도전성 페로브스카이트(Perovskite)막, 백금족금속, 도전성 백금족금속 산화물 및 이들의 복합막중에서 선택된 하나인 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 2항 또는 3항에 있어서,상기 퍼지가스는 수소, 실란, 질소, 아르곤 및 이들의 혼합가스중에 하나인 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 9항에 있어서,상기 퍼지가스의 공급방법은 지속적으로 공급하거나, 처음 일정량을 공급하여 퍼지하고 상기 희생금속층의 형성후 및 증착금속층의 치환이 이루어진후에 일정량을 공급하는 것을 특징으로 하는 선택적 금속층 형성방법.
- 제 1항에 있어서,상기 희생금속층은 알루미늄(Al)이고, 증착금속층은 티타늄 또는 백금인 것을 특징으로 하는 선택적 금속층 형성방법.
- ① 반도체 기판에 절연막을 형성하고 상기 절연막에 패터닝을 진행하여 반도체 기판의 소오스영역을 노출시키는 콘택홀을 형성하는 공정;② 상기 콘택홀과 연결되는 도전층 패턴을 형성하는 공정;③ 상기 절연막과 도전층 패턴에 대해 선택적으로 증착되는 특성을 지닌 희생금속 소스가스를 공급하여 상기 도전층 패턴 위에만 희생금속층을 형성하는 공정;④ 상기 희생금속층의 금속원자보다 더 작은 할로겐 결합력을 갖는 금속 할로겐화합물 가스를 공급하여 상기 희생금속층을 증착금속층으로 치환하는 공정;⑤ 상기 증착금속층 위에 유전체막을 형성하는 공정;⑥ 상기 유전체막 위에 상부전극을 형성하는 공정을 구비하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 12항에 있어서,상기 ③ 공정의 희생금속 소스가스를 공급하기 전에 퍼지가스를 공급하는 공정을 더 구비하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 13항에 있어서,상기 퍼지가스의 공급은 지속적으로 공급하거나, 처음 일정량을 공급하여 퍼지하고 상기 희생금속층의 형성후 및 증착금속층의 치환이 이루어진 후에 일정량을공급하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 12항에 있어서,상기 절연막은 산화막(SiO2) 또는 산화막을 포함하는 복합막을 이용하여 형성하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 12항에 있어서,상기 ④공정의 도전층 패턴은 불순물이 도핑된 폴리실리콘 또는 금속을 사용하여 형성하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 12항에 있어서,상기 ④공정의 희생금속층을 증착금속층으로 치환하는 공정후에 증착금속층을 실리사이드화하는 공정을 더 포함하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 16항에 있어서,상기 금속은 고융점금속, 고융점금속의 질화물, 고융점금속의 탄화물, 금속실리사이드, 도전성 페로브스카이트(Perovskite)막, 백금족금속, 도전성 백금족금속 산화물 및 이들의 복합막중에서 선택된 하나인 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- 제 12항에 있어서,상기 ③공정의 희생금속층을 형성하는 공정과, 상기 ④ 공정의 희생금속층을 증착금속층으로 치환하는 공정을 반복적으로 수행함으로써 원하는 두께를 갖는 증착금속층을 형성하는 것을 특징으로 하는 선택적 금속층 형성방법에 의한 반도체 소자의 커패시터 형성방법.
- ⓐ 반도체 기판에 절연막을 형성하고 패터닝을 진행하여 하부막을 노출하는 콘택홀을 형성하는 공정;ⓑ 상기 절연막과 하부막에 대해 선택적으로 증착되는 특성을 지닌 희생금속 소스가스를 공급하여 상기 하부막에만 희생금속층을 형성하는 공정;ⓒ 상기 희생금속층의 금속원자보다 더 작은 할로겐 결합력을 갖는 금속 할로겐화합물 가스를 공급하여 상기 희생금속층을 증착금속층으로 치환하는 공정; 및ⓓ 상기 콘택홀을 매립하는 도전층을 형성하는 공정을 구비하는 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 20항에 있어서,상기 ⓐ 공정의 절연막은 산화막 또는 산화막을 포함하는 복합막으로 형성하는 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 20항에 있어서,상기 ⓐ 공정의 하부막은 고융점금속막, 고융점금속막의 질화물, 고융점금속막의 탄화물, 수소말단기(Hydrogen Termination)를 갖는 불순물이 도핑된 실리콘막중에서 선택된 하나인 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 20항에 있어서,상기 ⓑ공정을 희생금속층을 형성하기 전에 퍼지가스를 공급하는 공정을 더 구비하는 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 23항에 있어서,상기 퍼지가스를 공급하는 방법은 지속적으로 공급하거나, 처음 일정량을 공급하여 퍼지하고 상기 희생금속층의 형성후 및 증착금속층의 치환이 이루어진 후에 일정량을 공급하는 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 23항 또는 24항에 있어서,상기 퍼지가스(purge)는 수소(H2), 실란(SiH4), 질소, 아르곤 및 이들의 혼합가스중에 하나인 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 20항에 있어서,상기 ⓑ 공정의 희생금속층 형성 공정과 ⓒ 공정의 희생금속층을 증착금속층으로 치환하는 공정을 반복 수행하여 원하는 두께를 갖는 금속증착층을 형성하는 것을 특징으로 하는 선택적 금속층 증착방법에 의한 콘택홀 매립방법.
- 제 1항에 있어서,상기 절연막과 도전층에 대해 선택적으로 증착되는 특성을 지닌 희생금속 소스가스는 DMAH 및 DMEAA중에서 선택된 하나인 것을 특징으로 하는 선택적 금속층 증착방법.
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KR100390844B1 (ko) * | 2001-06-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 반도체 소자의 강유전체 캐패시터 및 그 형성방법 |
US12204372B2 (en) | 2022-05-13 | 2025-01-21 | Samsung Electronics Co., Ltd. | Electronic device including conductive key button |
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US6372598B2 (en) | 2002-04-16 |
US20020006708A1 (en) | 2002-01-17 |
KR20000005661A (ko) | 2000-01-25 |
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