KR100273208B1 - 반도체메모리장치의고효율전하펌프회로 - Google Patents
반도체메모리장치의고효율전하펌프회로 Download PDFInfo
- Publication number
- KR100273208B1 KR100273208B1 KR1019970012109A KR19970012109A KR100273208B1 KR 100273208 B1 KR100273208 B1 KR 100273208B1 KR 1019970012109 A KR1019970012109 A KR 1019970012109A KR 19970012109 A KR19970012109 A KR 19970012109A KR 100273208 B1 KR100273208 B1 KR 100273208B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- signal
- input
- charge pump
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000005086 pumping Methods 0.000 claims abstract description 39
- 230000010355 oscillation Effects 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 21
- 238000009825 accumulation Methods 0.000 claims description 2
- 101000686246 Homo sapiens Ras-related protein R-Ras Proteins 0.000 claims 1
- 102100024683 Ras-related protein R-Ras Human genes 0.000 claims 1
- 230000005856 abnormality Effects 0.000 claims 1
- 230000001960 triggered effect Effects 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 208000019300 CLIPPERS Diseases 0.000 description 5
- 208000021930 chronic lymphocytic inflammation with pontine perivascular enhancement responsive to steroids Diseases 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (3)
- 파워-업한 후 입력되는 전원전압(VDD)을 감지하다가 임의로 설정한 전압 이상이 검출되면 고전압 검출신호를 출력하는 고전압 검출부와; 파워-업 한 후 입력되는 승압전압(VPP)을 감지하다가 상기 승압전압이 소정의 전압 이하로 다운되면 하이레벨의 온신호(LON)를 출력하는 레귤레이터와; 상기 레귤레이터의 온신호와 칩 외부로부터 로우레벨의 라스바신호(RASB: ROW ACCESS STROBE BAR)가 입력될 때 액티브되어 하이레벨의 라스펄스신호(RASP)를 출력하는 콘트롤러와; 상기 레귤레이터로 부터 온신호가 입력되면 발진동작을 하여 일정한 주기의 발진펄스신호(OSCH)를 발생하는 오실레이터와; 상기 오실레이터로부터 발진펄스신호(OSCH) 또는 콘트롤러로부터 라스펄스신호(RASP)가 입력되면 원하는 전위까지 펌핑동작을 행하고 하이레벨의 고전압 검출신호(HVDET)가 입력되면 펌핑동작을 멈추도록 하는 차지 펌프와; 초기 파워-업 시 승압전압(VPP)을 소정의 전위로 프리차지시켜 주는 풀업 트랜지스터와; 최종 출력단에 연결되어 전하량 축적 및 감결합(Decoupling)을 행하도록 하는 감결합용 캐패시터로 구성함을 특징으로 하는 반도체 메모리 장치의 고 효율 전하펌프 회로.
- 제1항에 있어서, 고전압 검출부는 파워-업시 임의로 설정한 기준전압을 발생하는 기준전압 발생부와; 입력되는 전원전압(VDD)의 레벨을 검출하는 레벨 검출부와; 상기 레벨 검출부의 검출신호를 소정시간 지연시켜 출력 타이밍을 조절하여 출력하는 제1 내지 제4 반전부로 구성함을 특징으로 반도체 메모리 장치의 고 효율 전하펌프 회로.
- 제2항에 있어서, 레벨 검출부는 4개의 다이오드형 트랜지스터와 기준전압에 의해 제어되는 트랜지스터가 병렬로 연결되어 구성함을 특징으로 하는 반도체 메모리 장치의 고 효율 전하펌프 회로.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970012109A KR100273208B1 (ko) | 1997-04-02 | 1997-04-02 | 반도체메모리장치의고효율전하펌프회로 |
US08/918,667 US5841725A (en) | 1997-04-02 | 1997-08-28 | Charge pump circuit for a semiconductor memory device |
TW086113604A TW354402B (en) | 1997-04-02 | 1997-09-19 | Charge pump circuit for a semiconductor memory device |
DE19812096A DE19812096A1 (de) | 1997-04-02 | 1998-03-19 | Ladepumpenschaltung für ein Halbleiterspeichergerät |
GB9807050A GB2323952B (en) | 1997-04-02 | 1998-04-01 | Charge pump circuit for a semiconductor memory device |
JP9037898A JP2964240B2 (ja) | 1997-04-02 | 1998-04-02 | 半導体メモリ装置のチャージポンプ回路 |
US09/195,551 US6177828B1 (en) | 1997-04-02 | 1998-11-19 | Charge pump circuit for a semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970012109A KR100273208B1 (ko) | 1997-04-02 | 1997-04-02 | 반도체메모리장치의고효율전하펌프회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980075793A KR19980075793A (ko) | 1998-11-16 |
KR100273208B1 true KR100273208B1 (ko) | 2000-12-15 |
Family
ID=19501775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970012109A Expired - Fee Related KR100273208B1 (ko) | 1997-04-02 | 1997-04-02 | 반도체메모리장치의고효율전하펌프회로 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5841725A (ko) |
JP (1) | JP2964240B2 (ko) |
KR (1) | KR100273208B1 (ko) |
DE (1) | DE19812096A1 (ko) |
GB (1) | GB2323952B (ko) |
TW (1) | TW354402B (ko) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100264959B1 (ko) * | 1997-04-30 | 2000-10-02 | 윤종용 | 반도체 장치의 고전압발생회로 |
JP2002501654A (ja) | 1997-05-30 | 2002-01-15 | ミクロン テクノロジー,インコーポレイテッド | 256Megダイナミックランダムアクセスメモリ |
KR100256226B1 (ko) * | 1997-06-26 | 2000-05-15 | 김영환 | 레퍼런스 전압 발생 장치 |
JP4109340B2 (ja) * | 1997-12-26 | 2008-07-02 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
KR19990050472A (ko) * | 1997-12-17 | 1999-07-05 | 구본준 | 승압전압 발생회로 |
KR100280434B1 (ko) * | 1998-01-23 | 2001-03-02 | 김영환 | 고전압발생회로 |
US5973895A (en) * | 1998-04-07 | 1999-10-26 | Vanguard International Semiconductor Corp. | Method and circuit for disabling a two-phase charge pump |
US6215708B1 (en) * | 1998-09-30 | 2001-04-10 | Integrated Device Technology, Inc. | Charge pump for improving memory cell low VCC performance without increasing gate oxide thickness |
JP3293577B2 (ja) * | 1998-12-15 | 2002-06-17 | 日本電気株式会社 | チャージポンプ回路、昇圧回路及び半導体記憶装置 |
JP4242006B2 (ja) * | 1999-06-23 | 2009-03-18 | 株式会社ルネサステクノロジ | チャージポンプ回路およびそれを用いた不揮発性半導体記憶装置 |
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JP3835968B2 (ja) | 2000-03-06 | 2006-10-18 | 松下電器産業株式会社 | 半導体集積回路 |
TW529003B (en) * | 2000-12-06 | 2003-04-21 | Sony Corp | Power voltage conversion circuit and its control method, display device and portable terminal apparatus |
JP2002191169A (ja) | 2000-12-20 | 2002-07-05 | Mitsubishi Electric Corp | 半導体集積回路 |
KR100550637B1 (ko) | 2000-12-30 | 2006-02-10 | 주식회사 하이닉스반도체 | 저전압 감지기를 내장한 고전압 검출기 |
DE10108980A1 (de) * | 2001-02-23 | 2002-09-12 | Koninkl Philips Electronics Nv | Anordnung zur Ansteuerung von Anzeigeeinheiten mit adaptiver Startsequenz |
KR100401519B1 (ko) * | 2001-09-14 | 2003-10-17 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전압발생회로 |
KR100401521B1 (ko) | 2001-09-20 | 2003-10-17 | 주식회사 하이닉스반도체 | 고전압 동작용 승압 회로 |
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KR100404001B1 (ko) | 2001-12-29 | 2003-11-05 | 주식회사 하이닉스반도체 | 차지 펌프 회로 |
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US6566847B1 (en) * | 2002-07-29 | 2003-05-20 | Taiwan Semiconductor Manufacturing Company | Low power charge pump regulating circuit |
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KR100520138B1 (ko) | 2002-11-28 | 2005-10-10 | 주식회사 하이닉스반도체 | 펌핑전압 발생장치 |
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KR100535044B1 (ko) * | 2003-02-13 | 2005-12-07 | 주식회사 하이닉스반도체 | 전압 펌프 회로 |
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KR100902060B1 (ko) * | 2008-05-08 | 2009-06-15 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 펌핑 전압 생성 회로 및 방법 |
US8416010B2 (en) * | 2011-04-27 | 2013-04-09 | Intersil Americas Inc. | Adaptive charge pump |
JP2013070462A (ja) * | 2011-09-21 | 2013-04-18 | Elpida Memory Inc | 半導体装置及びこれを備える情報処理装置 |
US8604869B1 (en) * | 2012-06-07 | 2013-12-10 | Maxim Integrated Products, Inc. | Charge pump with a wide input supply range |
KR20140145814A (ko) * | 2013-06-14 | 2014-12-24 | 에스케이하이닉스 주식회사 | 기준전압 생성기 및 그를 포함하는 저전압용 내부전원 생성장치 |
KR102105443B1 (ko) | 2013-06-21 | 2020-04-29 | 에스케이하이닉스 주식회사 | 반도체 장치 |
JP6090214B2 (ja) | 2014-03-19 | 2017-03-08 | 株式会社デンソー | 電源回路 |
CN115424642B (zh) * | 2022-11-03 | 2023-01-31 | 成都市硅海武林科技有限公司 | 一种具有二级起泵的fpga电荷泵电路 |
Citations (1)
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US43303A (en) * | 1864-06-28 | Improvement in lanterns |
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-
1997
- 1997-04-02 KR KR1019970012109A patent/KR100273208B1/ko not_active Expired - Fee Related
- 1997-08-28 US US08/918,667 patent/US5841725A/en not_active Expired - Lifetime
- 1997-09-19 TW TW086113604A patent/TW354402B/zh not_active IP Right Cessation
-
1998
- 1998-03-19 DE DE19812096A patent/DE19812096A1/de not_active Withdrawn
- 1998-04-01 GB GB9807050A patent/GB2323952B/en not_active Expired - Fee Related
- 1998-04-02 JP JP9037898A patent/JP2964240B2/ja not_active Expired - Fee Related
- 1998-11-19 US US09/195,551 patent/US6177828B1/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US43303A (en) * | 1864-06-28 | Improvement in lanterns |
Also Published As
Publication number | Publication date |
---|---|
US5841725A (en) | 1998-11-24 |
GB9807050D0 (en) | 1998-06-03 |
US6177828B1 (en) | 2001-01-23 |
GB2323952B (en) | 1999-06-02 |
GB2323952A (en) | 1998-10-07 |
DE19812096A1 (de) | 1998-10-08 |
TW354402B (en) | 1999-03-11 |
JP2964240B2 (ja) | 1999-10-18 |
JPH10337003A (ja) | 1998-12-18 |
KR19980075793A (ko) | 1998-11-16 |
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