KR100202670B1 - Plating method of semiconductor lead frame - Google Patents
Plating method of semiconductor lead frame Download PDFInfo
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- KR100202670B1 KR100202670B1 KR1019960031867A KR19960031867A KR100202670B1 KR 100202670 B1 KR100202670 B1 KR 100202670B1 KR 1019960031867 A KR1019960031867 A KR 1019960031867A KR 19960031867 A KR19960031867 A KR 19960031867A KR 100202670 B1 KR100202670 B1 KR 100202670B1
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- lead frame
- plating
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000007747 plating Methods 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 230000002950 deficient Effects 0.000 claims abstract description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 230000003472 neutralizing effect Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract 1
- 230000004913 activation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
본 고안은 반도체 리드프레임의 도금방법에 관한 것으로, 종래에는 리드프레임의 도금불량이 발생시 작업자가 수작업으로 불량 리드프레임을 케미컬에 침적시켜서 도금막을 제거한 후, 다시 도금장비에 로딩하여 재도금하는 방법으로 진행함으로서 인력 및 시간이 많이 소용되는 문제점이 있었다. 본 발명 반도체 리드프레임의 도금방법은 로딩공정과 클리닝 공정의 사이에 불량 리드프레임의 도금막을 제거하는 스트립공정을 지행하며, 이와 같은 스트립공정이 벨트에 리드프레임이 장착된 상태로 장비의 내부를 이동하며 연속작업으로 진행되도록 함으로서, 별도의 인력 및 시간이 소용되는 것을 방지하는 효과가 있고, 케미컬에 의해 작업자의 안전사고가 발생하는 것을 방지할 수 있는 효과가 있다.The present invention relates to a method for plating a semiconductor lead frame, and in the related art, when a plating defect of a lead frame occurs, a worker manually deposits a poor lead frame on a chemical to remove a plating film, and then loads the plating apparatus again and replats it. There was a problem that a lot of manpower and time is used by going. The plating method of the semiconductor lead frame according to the present invention performs a stripping process to remove the plating film of the defective leadframe between the loading process and the cleaning process, and the stripping process moves the inside of the equipment with the leadframe mounted on the belt. And by proceeding in a continuous operation, there is an effect to prevent the use of additional manpower and time, there is an effect that can prevent the occurrence of safety accidents of workers by the chemical.
Description
제1도는 종래 반도체 리드프레임의 도금방법을 설명하기 위한 도금장비의 개략구성도.1 is a schematic configuration diagram of a plating apparatus for explaining a plating method of a conventional semiconductor lead frame.
제2도는 종래 도금불량의 리드프레임을 스트립하는 방법을 보인 종단면도.Figure 2 is a longitudinal sectional view showing a method of stripping a lead frame of a conventional plating failure.
제3도는 a,b,c,d 는 스트립되는 상태를 보인 상태도.Figure 3 is a, b, c, d is a state diagram showing a stripping state.
제4도는 본 발명 반도체 리드프레임의 도금방법을 설명하기 위한 개략구성도.4 is a schematic configuration diagram for explaining a plating method of a semiconductor lead frame of the present invention.
제5도는 제4도의 스트립공정의 제1실시예를 보인 종단면도.5 is a longitudinal sectional view showing a first embodiment of the strip process of FIG.
제6도는 제4도의 스트립공정의 제2실시예를 보인 종단면도.6 is a longitudinal sectional view showing a second embodiment of the strip process of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
11 : 로딩부 12 : 스트립 존11: loading unit 12: strip zone
13 : 클리닝 존 14 : 액티베이션 존13: cleaning zone 14: activation zone
15 : 프리딥 존 16 : 도금부15: free dip zone 16: plating
17 : 중화부 18 : 언로딩부17: neutralizing unit 18: unloading unit
20, 31 : 용기 21 : 케미컬20, 31: container 21: chemical
22, 33 : 클립 23, 35 : 벨트22, 33: Clip 23, 35: Belt
24, 34 : 리드프레임 30 : 전해액24, 34: lead frame 30: electrolyte
32 : 스테인레스 판32: stainless steel plate
본 발명은 반도체 리드프레임의 도금방법에 관한 것으로. 특히 도금 불량으로 재작업시 스트립(STRIP)공정과 도금(PLATING)공정을 하나의 장비에서 기계적인 방법으로 동시에 실시하는 반도체 리드프레임의 도금방법에 관한 것이다.The present invention relates to a plating method of a semiconductor lead frame. In particular, the present invention relates to a plating method of a semiconductor lead frame in which a strip process and a plating process are simultaneously performed by a mechanical method when reworking due to poor plating.
일반적으로 반도체 제조공정 중 도금공정에서는 리드프레임의 아웃리드에 도금을 실시하여 후공정에서 부식을 방지하고, 패키지의 실장시 납땜을 용이하게 할 수 있도록 한다. 이와 같은 일반적인 도금공정의 순서를 제1도에 도시한 바, 이를 참고하여 간단히 설명하면 다음과 같다.In general, in the semiconductor manufacturing process, the plating process is performed to plate the outlead of the lead frame to prevent corrosion in a later process and to facilitate soldering when the package is mounted. The general plating process as described above is shown in FIG. 1, which will be described with reference to this as follows.
제1도는 종래 반도체 리드프레임의 도금순서를 설명하기 위한 도금장비의 개략구성도로서, 도시된 바와 같이, 1은 로딩(LOADING)부, 2는 클리닝 존(CLEANING ZONE), 3은 액티베이션 존(ACTIVATION ZONE), 4는 프리딥 존(PRE-DIP ZONE), 6은 중화부, 7은 언로딩부(UNLOADING ZONE), 8은 스트립 존(STRIP ZONE)이다.FIG. 1 is a schematic configuration diagram of a plating apparatus for explaining the plating order of a conventional semiconductor lead frame. As shown in the drawing, 1 is a loading section, 2 is a cleaning zone, and 3 is an activation zone. ZONE), 4 is the PRE-DIP ZONE, 6 is the neutralization part, 7 is the unloading zone (UNLOADING ZONE), 8 is the strip zone (STRIP ZONE).
이와 같이 구성되어 있는 종래 도금장비에서 도금공정이 진행되는 동작을 설명하면 다음과 같다.Referring to the operation of the plating process in the conventional plating equipment is configured as follows.
먼저, 로딩부(1)의 벨트에 도금할 리드프레임을 로딩시키는 로딩공정을 진행하고, 이와 같이 로딩된 리드프레임이 벨틀를 따라 클리닝 존(2)으로 이동하여 리드프레임 표면의 이물질을 제거하기 위한 클리닝공정을 진행한다. 그런 다음 상기와 같이 이물질이 제거된 리드프레임이 액티베이션 존(3)으로 이동하면 리드프레임 표면의 산화막을 제거하는 산화막제거공정을 진행하고, 이와 같이 산화막이 제거된 리드프레임이 프리딥 존(4)으로 이동하면 도금시 도금성을 양호하게 하기 위한 프리딥 공정을 진행하며, 상기와 같이 프리딥 공정이 완료된 리드프레임은 도금존(5)으로 이동하여 Sn-Pb의 도금공정을 실시하고, 도금이 완료된 리드프레임은 중화부(6)에서 후처리공정을 거친 후, 마지막으로 언로딩부(7)로 이동하여 리드프레임을 메가진에 수납하는 언로딩공정을 진행하여 도금을 완료한다.First, a loading process of loading a lead frame to be plated on the belt of the loading unit 1 is performed, and the loaded lead frame moves to the cleaning zone 2 along the belt to remove foreign substances on the surface of the lead frame. Proceed with cleaning process. Then, when the lead frame from which the foreign matter has been removed is moved to the activation zone 3 as described above, an oxide film removing process of removing the oxide film on the surface of the lead frame is performed, and the lead frame from which the oxide film has been removed is predip zone 4. When moving to, the pre-dip process is performed to improve the plating property during plating, and the lead frame in which the pre-dip process is completed is moved to the plating zone 5 to perform the plating process of Sn-Pb. After the completed lead frame is subjected to the post-treatment process in the neutralizing unit 6, finally, the lead frame is moved to the unloading unit 7 to proceed with the unloading process for accommodating the lead frame in the magazine to complete plating.
그리고, 상기 스트립 존(8)에서는 도금된 벨트의 도금층을 스트립한다.In the strip zone 8, the plated layer of the plated belt is stripped.
한편, 상기와 같은 도금공정이 진행되는 중에 리드프레임의 도금불량이 발생할 수 있는데, 이와 같이 도금불량이 발생하면 제2도와 같이 수작업으로 L-60 케미컬(9)에 리드프레임(10)을 담그고, 도금막을 제거하여 리드프레임(10)을 다시 로딩부(1)에 로딩하여 도금공정을 진행 한다.On the other hand, the plating failure of the lead frame may occur during the plating process as described above, if the plating failure in this way, soaking the lead frame 10 in the L-60 chemical (9) by hand as shown in FIG. The plating process is performed by removing the plating film and loading the lead frame 10 back to the loading unit 1.
제3도는 제2도의 스트립 방법에 의해 도금막이 제거되는 상태를 보인 것으로, a도와 같이 리드프레임(10)의 도금막(11)을 스트립하여 제거하고, 그 도금막(11)이 제거된 부분을 b도와 같이 순수(12)로 세척을하며, 그 세척된 리드프레임(10)을 c도와 같이 건조하여, d도와 같이 로딩하는 것이다.FIG. 3 shows a state in which the plating film is removed by the strip method of FIG. 2. Stripping and removing the plating film 11 of the lead frame 10 as shown in a shows a portion where the plating film 11 is removed. It is washed with pure water 12 as shown in b, the dried leadframe 10 is dried as shown in c, and loaded as shown in d.
그러나, 상기와 같은 종래 반도체 리드프레임의 도금방법은 도금불량이 발생할 경우에 케미컬에 수작업으로 불량 리드프레임을 담그기 때문에 막대한 인력 및 시간이 소요되는 문제점이 있었다.However, the conventional method of plating a semiconductor lead frame as described above has a problem in that enormous manpower and time are required because a poor lead frame is manually immersed in the chemical in case of poor plating.
그리고, 케미컬이 작업자의 인체에 묻어서 안전사고가 발생하는 문제점이 있었다.And, there was a problem that the safety accident occurs because the chemical buried in the human body of the worker.
본 발명의 주목적은 상기와 같은 여러 문제점을 갖지 않는 반도체 리드프레임의 도금방법을 제공함에 있다.An object of the present invention is to provide a method for plating a semiconductor lead frame that does not have various problems as described above.
본 발명의 다른 목적은 인력 및 시간을 절감하여 생산성을 향상시키도록 하는데 적합한 반도체 리드프레임의 도금방법을 제고함에 있다.Another object of the present invention is to improve a plating method of a semiconductor lead frame suitable for improving productivity by reducing manpower and time.
본 발명의 또다른 목적은 스트립작업을 기계적으로 실시하여 케미컬에 의한 안전사고를 방지할 수 있도록 하는데 적합한 반도체 리드프레임의 도금방법을 제공함에 있다.Still another object of the present invention is to provide a plating method of a semiconductor lead frame suitable for mechanically performing a strip operation to prevent a safety accident caused by a chemical.
상기와 같은 본 발명의 목적을 달성하기 위하여 메가진에서 리드프레임을 인출하여 벨트에 로딩하는 로딩공정을 수행하는 단계와, 도금불량인 리드프레임의 도금층을 제거하는 스트립공정을 수행하는 단계와, 리드프레임 표면의 산화막을 제거하는 산화막제거공정을 수행하는 단계와, 도금시 도금성을 양호하게 하기 위한 프리딥공정을 수행하는 단계와, 리드프레임에 도금을 실시하는 도금공정을 수행하는 단계와, 도금된 리드프레임을 중화시키고, 세척과 건조를 실시하는 후처리공정을 실시하는 단계와, 후처리 가 완료된 리드프레임을 메가진에 수납하는 언로딩공정을 수행하는 단계의 순서로 진행하는 것을 특징으로 하는 반도체 리드프레임의 도금방법이 제공된다.In order to achieve the object of the present invention as described above, the step of carrying out the loading step of taking out the lead frame from the magazine and loading it on the belt, and performing the strip process of removing the plating layer of the lead frame is poor plating; Performing an oxide film removing process for removing an oxide film on the surface of the frame, performing a pre-dip process for improving plating properties during plating, performing a plating process for plating the lead frame, and plating Neutralizing the prepared lead frame, performing a post-treatment process for performing washing and drying, and performing an unloading process for accommodating the post-processed lead frame in a magazine. A plating method of a semiconductor lead frame is provided.
이하, 상기와 같은 순서로 진행되는 반도체 리드프레임의 도금방법을 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the plating method of the semiconductor lead frame proceeds in the same order as described above in detail with reference to the embodiment of the accompanying drawings.
제4도는 본 발명 반도체 리드프레임의 도금방법을 설명하기 위한 개략구성도로서, 도시된 바와 같이, 본 발명은 벨트로 도금할 제품을 이송하는 도금장비의 로딩부(11)에 메가진을 장착하고, 그리퍼로 리드프레임을 1개씩 흡착하여 벨트에 장착하는 로딩공정을 수향하고, 벨트를 따라 이동하는 리드프레임이 스트립 존(12)에 도달하면 불량도금된 리드프레임의 도금막을 제거하기 위한 스트립공정을 수행한다.Figure 4 is a schematic configuration for explaining the plating method of the semiconductor lead frame of the present invention, as shown, the present invention is equipped with a mega on the loading unit 11 of the plating equipment for transporting the product to be plated with a belt And a loading process for sucking the lead frames one by one with a gripper and mounting them on the belt, and when the lead frame moving along the belt reaches the strip zone 12, a stripping process for removing the plated film of the poorly plated lead frame is performed. Perform.
그리고, 상기와 같이 스트립공정이 완료된 리드프레임은 벨트를 따라 이동하면서 클리닝 존(13)에서는 이물질이 제거되고, 액티베이션 존(14)에서 리드표면의 산화막을 제거하는 산화막제거공정을 수행하며, 프리딥 존(15)에서 후공정인 도금시 도금성을 양호하게 하기 위한 프리딥 공정을 수행하고, 도금부(16)에서 리드프레임에 Sn/Pb도금을 실시하는 도금공정을 수행하며, 중화부(17)에서 도금된 리드프레임을 중화시키고, 세척과 건조를 실시하는 후처리공정을 실시하고, 후처리가 완료된 리드프레임은 언로딩부(18)로 이동하여 메가진에 수납하는 언로딩공정을 수행하여 도금공정을 완료한다.Then, as described above, the lead frame having completed the strip process moves along the belt to remove foreign substances from the cleaning zone 13 and to perform an oxide film removing process of removing an oxide film on the lead surface from the activation zone 14, and predip In the zone 15, a pre-dip process is performed to improve the plating property during the plating process, and the plating unit 16 performs a plating process of Sn / Pb plating on the lead frame, and the neutralization unit 17 is performed. Neutralize the plated lead frame, and perform a post-treatment process for washing and drying, and the lead frame after the post-treatment is moved to the unloading unit 18 to perform an unloading process for storing in the mega Complete the plating process.
제5는 제4도의 스트립공정의 제1실시예를 보인 종단면도로서, 도시된 바와 같이, 용기(20)의 내부에 케미컬(21)을 수납하고, 클립(22)에 의하여 벨트(23)에 장착된 리드프레임(24)이 케미컬(21)에 침적된 상태로 이동되도록 하여 리드프레임의 도금막을 제거하는 것이다.FIG. 5 is a longitudinal sectional view showing the first embodiment of the stripping process of FIG. 4, and as shown, the chemical 21 is housed inside the container 20, and the belt 22 is attached to the belt 23 by the clip 22. As shown in FIG. The mounted lead frame 24 is moved in a state of being deposited on the chemical 21 to remove the plating film of the lead frame.
제6도는 제4도의 스트립공정의 제2실시예를 보인 종단면도로서, 도시된 바와 같이, 전해액(30)이 수납된 용기(31)의 내측 양면에 스테인레스판(32)을 설치하고, 그 스테인레스 판(32)에 -극을 인가하며, 클립(33)에 의하여 리드프레임(34)이 장착된 벨트(35)에 +극을 인가하여, 리드프레임(34)이 전해액(30)에 침전된 상태로 이동하면서 도금막이 분해되어 스테인레스 판(32)에 부착되도록 한 것이다.FIG. 6 is a longitudinal sectional view showing the second embodiment of the strip process of FIG. 4. As shown in FIG. 6, stainless plates 32 are provided on both inner surfaces of the container 31 in which the electrolyte solution 30 is accommodated. The negative electrode is applied to the plate 32 and the positive electrode is applied to the belt 35 on which the lead frame 34 is mounted by the clip 33, so that the lead frame 34 is precipitated in the electrolyte solution 30. The plated film is decomposed and attached to the stainless plate 32 while moving to.
부연하여 설명하면, 벨트(35)에 장착되어 +극이 되는 리드프레임(34)에 형성된 도금막의 주성분인 Sn2+, Pb2+이 전해액(30) 중에 분해된후, -극이 인가된 스테인레스 판(32)에 Sn2+, Pb2+이 부착되도록 한 것이다.In other words, after the Sn 2+ and Pb 2+, which are the main components of the plating film formed on the lead frame 34, which are mounted on the belt 35 and become the + poles, are decomposed in the electrolyte 30, the stainless steel to which the-poles are applied Sn 2+ and Pb 2+ are attached to the plate 32.
이상에서 상세히 설명한 바와 같이 본 발명 반도체 리드프레임의 도금방법은 로딩공정과 클리닝공정의 사이에 불량 리드프레임의 도금막을 제거하는 스크립공정을 진행하며, 이와 같은 스트립공정이 벨트에 리드프레임이 장착된 상태도 장비의 내부를 이동하며 연속작업으로 진행되도록 함으로서, 별도의 인력 및 시간이 소요되는 것을 방지하는 효과가 있고, 케미컬에 의해 작업자의 안전사고가 발생하는 것을 방지할 수 있는 효과가 있다.As described in detail above, in the plating method of the semiconductor lead frame of the present invention, a stripping process of removing the plated film of the defective lead frame is performed between the loading process and the cleaning process, and the strip process is such that the lead frame is mounted on the belt. Also by moving the inside of the equipment to proceed in a continuous operation, there is an effect to prevent the need for a separate manpower and time, there is an effect that can prevent the occurrence of a safety accident of the worker by the chemical.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960031867A KR100202670B1 (en) | 1996-07-31 | 1996-07-31 | Plating method of semiconductor lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960031867A KR100202670B1 (en) | 1996-07-31 | 1996-07-31 | Plating method of semiconductor lead frame |
Publications (2)
| Publication Number | Publication Date |
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| KR980012369A KR980012369A (en) | 1998-04-30 |
| KR100202670B1 true KR100202670B1 (en) | 1999-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019960031867A Expired - Fee Related KR100202670B1 (en) | 1996-07-31 | 1996-07-31 | Plating method of semiconductor lead frame |
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| KR100781152B1 (en) * | 2001-12-31 | 2007-11-30 | 삼성테크윈 주식회사 | Leadframe Plating Apparatus and Plating Method Using The Same |
| KR100917783B1 (en) * | 2007-10-05 | 2009-09-21 | 주식회사 에이스테크놀로지 | RF equipment and plating method therefor |
| CN113981350B (en) * | 2021-11-03 | 2023-07-07 | 吉林建筑大学 | A device for removing tin and coating tin on electrical equipment and its application method |
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