KR0166803B1 - Stabilization Method of BPSG Thin Film - Google Patents
Stabilization Method of BPSG Thin Film Download PDFInfo
- Publication number
- KR0166803B1 KR0166803B1 KR1019900014382A KR900014382A KR0166803B1 KR 0166803 B1 KR0166803 B1 KR 0166803B1 KR 1019900014382 A KR1019900014382 A KR 1019900014382A KR 900014382 A KR900014382 A KR 900014382A KR 0166803 B1 KR0166803 B1 KR 0166803B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- bpsg
- washing
- bpsg thin
- flow
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 금속전 유전물질인 BPSG 박막 플로우시 표면에 기공이 형성되는 등의 불량을 방지할 수 있는 BPSG 박막의 안정화 방법에 관한 것으로, BPSG박막의 세척전 700℃~850℃에서 20~40분 열처리하여 박막을 조밀화시키므로 BPSG 플로우시 기공발생을 억제할 수 있게 한 것이다.The present invention relates to a method for stabilizing a BPSG thin film that can prevent defects such as the formation of pores on the surface during the flow of BPSG thin film, a dielectric material for metal, 20-40 minutes at 700 ℃ ~ 850 ℃ before washing the BPSG thin film Since the thin film is densified by heat treatment, it is possible to suppress pore generation during BPSG flow.
Description
본발명은 금속전 유전물질인 BPSG 박막 플로우(flow)이 표면에 기공(void)이 형성되는 등의 불량을 방지할 수 있는 BPSG박막의 안정화방법에 관한 것이다.The present invention relates to a method for stabilizing a BPSG thin film that can prevent a defect such as the formation of pores on the surface of the BPSG thin film flow, which is a metal dielectric material.
일반적으로 세척공정은 NH4OH,HF,HCL,H2O2케미컬(chemical)을 적정한 비율로 사용하여 필름증착 전후에 웨이퍼상에 발생되는 유기물질을 제거하기 위한 것이다.In general, the washing process is to remove the organic substances generated on the wafer before and after film deposition by using a suitable ratio of NH 4 OH, HF, HCL, H 2 O 2 chemical (chemical).
이와같은 세척공정에는 RCA 방법과 SPM방법이 있으며 먼저 RCA방법의 경우에는,There are RCA method and SPM method in this washing process. First, in the case of RCA method,
HOT DI(고온 탈이온수 : NH4OH : H2O2= 5 : 1 : 1)HOT DI (Hot Deionized Water: NH 4 OH: H 2 O 2 = 5: 1: 1)
DI : HF = 50 : 1DI: HF = 50: 1
HOT DI : HCL : H2O2= 5 : 1 : 1HOT DI: HCL: H 2 O 2 = 5: 1: 1
SPM방법의 경우에는,In the case of the SPM method,
H2SO4: H2O2= 3 : 1 이 사용되고 있다.H 2 SO 4 : H 2 O 2 = 3: 1 is used.
다시말해서 RCA방법은 웨이퍼를 NH4OH,H2O2,H2O가 들어있는 용기에 넣어 불순물을 제거한 후 이를 꺼내 세척조에서 세척하고 HF가 들어있는 용기에 넣은 후 이를 꺼내 세척조에서 세척하며 다시 HCL이 들어있는 용기에 넣은 후 이를 꺼내 세척조에서 세척하였다.In other words, the RCA method removes impurities in a container containing NH 4 OH, H 2 O 2 , and H 2 O, removes them, washes them in a washing tank, puts them in a container containing HF, and removes them from the washing tank. After placing in a container containing HCL it was taken out and washed in a washing bath.
또한, SPM방법은 웨이퍼를 H2SO4, H2O2가 들어있는 용기에 넣어 불순물을 제거한 후 세척조에서 세척하고 HF가 들어있는 용기에 넣은 후 이를 꺼내 세척조에서 세척하였다.In addition, in the SPM method, the wafer was placed in a container containing H 2 SO 4 and H 2 O 2 to remove impurities, washed in a washing tank, placed in a container containing HF, and taken out of the washing tank.
그러나, 상기와 같은 종래의 세척방법에 있어서는 BPSG도펀트 양에 따른 세척공정 기준 미비로 그 농도에 해당되는 플로우 특성을 얻을 수 없을 뿐만 아니라 기공형성으로 인한 박막의 질을 저하시키기가 쉬웠다.However, in the conventional cleaning method as described above, the flow characteristics corresponding to the concentration were not obtained due to the insufficient level of the washing process according to the amount of BPSG dopant, and it was easy to reduce the quality of the thin film due to the pore formation.
즉, 금속전 유전물질인 BPSG 박막내의 도펀트 양이 5wt%보론, 2.8wt%인 (P)이상으로 존재할 때의 RCA세척이나, 5.2wt% 보론, 3wt% 인 이상일때의 SPM세척방법은 세척용역내의 탈이온수, HCL,NH4OH가 도펀트외의 상호작용으로 보론, 인 산화물의 세척용액내에서 용해 및 인산화되어 플로우시 기체상(gas phase)으로 기공 및 플로우 특성을 저하시키게 되었다.That is, RCA washing when the amount of dopant in the BPSG thin film, which is a dielectric material of metal, is 5wt% boron and 2.8wt% or more (P), or SPM washing method when 5.2wt% boron and 3wt% or more is used for cleaning. Deionized water, HCl, NH 4 OH in the solution was dissolved and phosphorylated in the washing solution of boron and phosphorus oxide by interaction other than the dopant, and deteriorated the pore and flow characteristics in the gas phase during flow.
본발명은 이와같은 종래의 결점을 해결하기 위한 것으로 이를 상세히 설명하면 다음과 같다.The present invention is to solve such a conventional defect as described in detail as follows.
본 발명은 BPSG박막의 세척전 700℃ - 850℃에서 20~40분 열처리하여 박막을 조밀화시키면 세척공정시 양호한 플로우 특성을 얻을 수 있고 기공발생을 억제시킬 수 있다.In the present invention, if the thin film is densified by heat treatment at 700 ° C. to 850 ° C. for 20 to 40 minutes before washing the BPSG thin film, good flow characteristics can be obtained during the washing process and pore generation can be suppressed.
또한, 5wt% 보론, 2.8wt% 인 이하인 BPSG박막은 SPM, RCA, 탈이온수 세척을 실시하여도 박막내의 기공 및 플로우 특성저하를 일으키지 않으므로 본발명의 세척공정이 그대로 사용가능하다.In addition, the BPSG thin film of less than 5wt% boron, 2.8wt% does not cause deterioration of pore and flow characteristics in the thin film even after washing with SPM, RCA, or deionized water, so that the washing process of the present invention can be used as it is.
상기에서 조밀화되는 이유는 필름증착후에 필름내의 분자들의 결합이 불안정하여 세척공정시 세척액과 필름분자들이 상호작용을 일으키는데 700℃~850℃로 열을 가하면 필름내 분자들의 결합이 강해져 세척공정시 세척액과 상호작용을 일으키지 않기 때문이다.The reason for the densification is that the binding of molecules in the film is unstable after film deposition, causing the washing liquid and film molecules to interact during the washing process. When heat is applied at 700 ° C. to 850 ° C., the binding of molecules in the film becomes stronger, and It doesn't cause any interaction.
이상과 같은 본발명에 의하면 BPSG박막의 세척공정전 700℃~850℃에서 20~40분 조밀화 공정을 실시하여 5wt%보론, 2.8wt% 인 이상인 BPSG박막의 안정화로 플로우시 기체상으로 인한 기공형성을 억제할 수 있음은 물론 양호한 플로우 특성을 얻을 수 있는 장점이 있다.According to the present invention as described above, the pore formation due to gas phase during the flow by stabilizing the BPSG thin film of 5wt% boron, 2.8wt% or more by performing a 20-40 minutes densification process at 700 ℃ ~ 850 ℃ before the washing process of the BPSG thin film It can be suppressed as well as there is an advantage that can obtain a good flow characteristics.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900014382A KR0166803B1 (en) | 1990-09-12 | 1990-09-12 | Stabilization Method of BPSG Thin Film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900014382A KR0166803B1 (en) | 1990-09-12 | 1990-09-12 | Stabilization Method of BPSG Thin Film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920007118A KR920007118A (en) | 1992-04-28 |
| KR0166803B1 true KR0166803B1 (en) | 1999-02-01 |
Family
ID=19303496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900014382A KR0166803B1 (en) | 1990-09-12 | 1990-09-12 | Stabilization Method of BPSG Thin Film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0166803B1 (en) |
-
1990
- 1990-09-12 KR KR1019900014382A patent/KR0166803B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920007118A (en) | 1992-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5051134A (en) | Process for the wet-chemical treatment of semiconductor surfaces | |
| JP3553939B2 (en) | Semiconductor processing method using a mixture of HF and carboxylic acid | |
| US5259888A (en) | Process for cleaning quartz and silicon surfaces | |
| KR20200039801A (en) | Compositions and methods for etching substrates comprising silicon nitride | |
| CN114350367B (en) | Low-foam etching solution with uniform etching | |
| CN117210814B (en) | Microetching cleaning agent for copper surface of circuit board and preparation method thereof | |
| KR100238234B1 (en) | In-situ cleaning apparatus for semiconductor device and method for cleaning semiconductor device using the same | |
| JPH0641773A (en) | Treating liquid for semiconductor wafer | |
| KR0166803B1 (en) | Stabilization Method of BPSG Thin Film | |
| KR19990062702A (en) | Processing Method of Semiconductor Substrate | |
| JPH0496226A (en) | Manufacturing method of semiconductor device | |
| EP0510191A1 (en) | Process for preparing silicon dioxide coating | |
| JPH11162953A (en) | Etching of silicon wafer | |
| EP1169492A2 (en) | Method of producing thin, poorly soluble coatings | |
| KR100223971B1 (en) | Titanium composite cleaning chemical for semiconductor process | |
| KR20060044388A (en) | Etching Composition and Substrate Etching Method | |
| JP2002192090A (en) | Cleaning method | |
| JPH1129795A (en) | Cleaning water for electronic material, method for producing the same, and method for cleaning electronic material | |
| KR101799282B1 (en) | Cleaning composite of semiconductor wafer and display panel and manufacturing method thereof | |
| CN118668231B (en) | A low surface tension long-acting developer | |
| JP4580258B2 (en) | Etching composition and etching method | |
| JP3522100B2 (en) | Alkaline cleaning agent | |
| KR102730293B1 (en) | Method for manufacturing silica aerogel | |
| WO2003024894A1 (en) | Method for producing high purity low dielectric constant ceramic and hybrid ceramic films | |
| JP2018056185A (en) | Etching liquid and substrate processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19900912 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19950706 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19900912 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19980521 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980905 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19980924 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 19980924 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20010817 Start annual number: 4 End annual number: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20020820 Start annual number: 5 End annual number: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20030814 Start annual number: 6 End annual number: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20040820 Start annual number: 7 End annual number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20050824 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20050824 Start annual number: 8 End annual number: 8 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20070810 |