KR0130154B1 - 차동 증폭기 - Google Patents
차동 증폭기Info
- Publication number
- KR0130154B1 KR0130154B1 KR1019940030634A KR19940030634A KR0130154B1 KR 0130154 B1 KR0130154 B1 KR 0130154B1 KR 1019940030634 A KR1019940030634 A KR 1019940030634A KR 19940030634 A KR19940030634 A KR 19940030634A KR 0130154 B1 KR0130154 B1 KR 0130154B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- power supply
- supply voltage
- node
- differential amplifier
- Prior art date
Links
- 230000003139 buffering effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000007257 malfunction Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 102000001479 Member 11 Subfamily B ATP Binding Cassette Transporter Human genes 0.000 description 1
- 108010093662 Member 11 Subfamily B ATP Binding Cassette Transporter Proteins 0.000 description 1
- VLQGDKKHHCKIOJ-UHFFFAOYSA-N NNOS Chemical compound NNOS VLQGDKKHHCKIOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000006160 differential media Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/471—Indexing scheme relating to amplifiers the voltage being sensed
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (5)
- 전원 전압의 변화를 감지하는 전원전압 감지수단(100)과, 상기 전원전압 감지수단(100)으로 부터의 출력에 의해 안정돤 동작 전압을 출력하는 동작전압 조절수단(101)과 상기 동작전압 조절수단(101)으로부터 출력되는 안정된 동작전압을 바이어스전압으로 수신하여 동작하는 증폭수단(102)을 구비하며, 상기 전원전압이 기준치를 초과하면 상기 전원전압 감지수단(100)에 의하여 제어된 상기 동작잔압 조절 수단(101)은 상기 증폭수단으로 인가되는 상기 방이어스전압을 상기 전원전압보다 낮추고, 상기 전원전압이 상기 기준치에 미달하면 상기 전원전압 감지수단(100)에 의하여 제어된 상기 동작전압 조절 수단(101)은 상기 증폭수단으로 인가되는 상기 바이어스전압을 상기 전원전압과 동일하게 하는 것을 특징으로 하는 차동 증폭기.
- 제1항에 있어서, 상기 전원전압 감지수단(100)은, 상기 전원전압에 의해 제어되어 상기 전원전압을 분압하여 출력하는 분압수단(200)과, 상기 분압수단 (200)으로 부터의 출력전위와, 소정의 기준전압을 비교 증폭하는 전압 비교수단(201)과, 상기 전압 비교수단(201)으로 부터의 비교 증폭된 출력신호를 완충하여 상기 전원전압의 변화를 감지하는 출력신호를 출력하는 완층수단(202)을 구비하는 것을 특징으로 하는 차동 증폭기.
- 제 2 항에 있어서, 상기 완층수단(202)은 인버터로 구성된 것을 특징으로 하는 차동 증폭기.
- 제1항에 있어서, 상기 동작전압 조절수단(101)은 상기 전원전압의 변동에 따라서, 상기 증폭수단의 공통모드레인지를 조절할 수 있도록 하는 것을 특징으로 하는 차동 증폭기.
- 제 2항에 있어서, 상기 동작전압 조절수단(101)은, 상기 전원전압 및 제 1노드(N19) 사이에 접속되며 게이트가 제 2 노드(Nl8)에 연결된 제 1 PMOS트랜지스터(Q22)와, 사기 제 2 노드(Nl8) 및 접지전압(Vss) 사이에 접속되며 게이트에 상기 완충수단의 출력신호가 인가되는 NMOS트랜지스터(Q24)와, 상기 제 2 노드(Nl8) 및 상기 제 1 노드(Nl9) 사이에 접속되며 게이트에 상기 완충수단의 출력신호가 인가되는 제 2 PMOS트랜지스터(Q23)로 이루어진 것을 특징으로 하는 차동 증폭기.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940030634A KR0130154B1 (ko) | 1994-11-21 | 1994-11-21 | 차동 증폭기 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940030634A KR0130154B1 (ko) | 1994-11-21 | 1994-11-21 | 차동 증폭기 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960019960A KR960019960A (ko) | 1996-06-17 |
| KR0130154B1 true KR0130154B1 (ko) | 1998-10-01 |
Family
ID=19398525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940030634A KR0130154B1 (ko) | 1994-11-21 | 1994-11-21 | 차동 증폭기 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0130154B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100834119B1 (ko) * | 2006-10-31 | 2008-06-02 | 삼성전자주식회사 | Ｍｏｓｆｅｔ회로 구조 및 상기 ｍｏｓｆｅｔ 회로 구조를채용한 ｃｍｏｓ 증폭기 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100505569B1 (ko) * | 1997-12-08 | 2005-10-19 | 삼성전자주식회사 | 동기식 디램 반도체 장치의 내부 전압 발생기 |
-
1994
- 1994-11-21 KR KR1019940030634A patent/KR0130154B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100834119B1 (ko) * | 2006-10-31 | 2008-06-02 | 삼성전자주식회사 | Ｍｏｓｆｅｔ회로 구조 및 상기 ｍｏｓｆｅｔ 회로 구조를채용한 ｃｍｏｓ 증폭기 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960019960A (ko) | 1996-06-17 |
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