JPWO2020129885A1 - Molding materials for semiconductor encapsulation, manufacturing methods of molding materials for semiconductor encapsulation, and semiconductor devices using them - Google Patents

Abstract

A molding material for semiconductor encapsulation in which the content of agglomerates and / or gel-like substances having a size of more than 100 μm is 50 ppm or less.

Description

The present disclosure relates to a molding material for semiconductor encapsulation, a method for producing the same, and a semiconductor device using the molding material for semiconductor encapsulation.

Generally, in a semiconductor device, a semiconductor chip fixed to a support is resin-sealed with a molding material for semiconductor encapsulation. Here, the molding material for semiconductor encapsulation is a thermosetting resin such as an epoxy resin having excellent electrical properties, heat resistance, mass productivity, etc., and an additive such as a curing agent, a catalyst, a mold release agent, a flame retardant, and a colorant. And an inorganic filler. As a manufacturing method thereof, a predetermined amount of the components constituting the resin composition are mixed and mixed, and then kneaded by a roll, a single-screw extruder, a combination of a single-screw extruder and a roll, or a twin-screw extruder, and kneading. The material is rolled into a sheet, cooled, and then crushed using an impact type crusher, and processed into powder granules or tablets as needed.

By the way, semiconductor devices are required to be thinner. As a method for manufacturing a thin semiconductor device, a semiconductor wafer is ground or thinned, but there are concerns about warpage, intermittent yield, reliability, and the like. Therefore, a method of grinding the surface of a resin-sealed package has been studied as a method of making a semiconductor package into a desired ultrathin thickness without damaging the semiconductor wafer. For example, Patent Document 1 discloses a method for grinding a molded package in order to reduce the thickness of the package. Further, Patent Document 2 discloses a sealing technique capable of forming a package having a narrow gap structure having a thin resin thickness on a chip with good yield without causing problems such as wire flow or poor filling.

U.S. Patent Application Publication No. 2009/0230567 Japanese Unexamined Patent Publication No. 2010-159401

However, when the resin thickness on the chip becomes thin, defects such as surface protrusions, abnormal appearance, wire deformation, and chip cracking may occur due to aggregates or gel-like substances of the inorganic filler in the molding material. was there.

This disclosure has been made in view of the above circumstances. For example, a semiconductor encapsulating molding material and a manufacturing method thereof, which can improve the appearance and reliability of a semiconductor device even if the resin thickness on the chip of the semiconductor package is as thin as 100 μm or less, and the semiconductor. An object of the present invention is to provide a semiconductor device using a molding material for encapsulation.

As a result of diligent studies by the present inventors in order to achieve the above object, the semiconductor encapsulation molding material in which the content of agglomerates and / or gel-like substances having a size of more than 100 μm is equal to or less than a specific value has the above-mentioned characteristics. We found that we were satisfied with this, and completed this disclosure.

That is, the present disclosure provides the following [1] to [5].
[1] A molding material for semiconductor encapsulation in which the content of agglomerates and / or gel-like substances having a size of more than 100 μm is 50 ppm or less.
[2] A mixing step of mixing raw materials containing an epoxy resin, a curing agent and an inorganic filler, a kneading step of kneading the mixture obtained in the mixing step to obtain a kneaded product, and kneading obtained in the kneading step. A rolling step of rolling a product into a sheet-like composition with a rolling roll, a cooling step of cooling the sheet-like composition rolled in the rolling step in a gas while transporting it on a cooling conveyor, and a cooling step of cooling the product in the cooling step. A method for producing a molding material for semiconductor encapsulation, which comprises a crushing step of crushing a sheet-like composition with a crusher, and further having a crushing / classification step of crushing / classifying a crushed object to a particle size of 100 μm or less. The method for producing a molding material for encapsulating a semiconductor according to the above [1].
[3] A mixing step of mixing raw materials containing an epoxy resin, a curing agent and an inorganic filler, a kneading step of kneading the mixture obtained in the mixing step to obtain a kneaded product, and kneading obtained in the kneading step. A first rolling step of rolling a product into a sheet-like composition with a rolling roll, and a first cooling process of cooling the sheet-like composition rolled in the first rolling step in a gas while being conveyed by a cooling conveyor. The step, the first crushing step of crushing the sheet-like composition cooled in the first cooling step with a crusher, and the crushed product obtained in the first crushing step are crushed and classified into a particle size of 100 μm or less. The crushing / classification step, the second rolling step of rolling the crushed product obtained in the crushing / classification step into a sheet shape with a rolling roll, and the sheet-like composition rolled in the second rolling step are cooled conveyors. [1] ] A method for producing a molding material for encapsulating a semiconductor.
[4] The method for producing a molding material for semiconductor encapsulation according to the above [2] or [3], wherein the pulverization / classification is performed in a low temperature atmosphere of 10 ° C. or lower in the pulverization / classification step.
[5] A semiconductor device in which a semiconductor element is sealed with the molding material for semiconductor encapsulation according to the above [1].

According to the present disclosure, even if the resin thickness on the chip of the semiconductor package is as thin as 100 μm or less, the appearance and reliability of the semiconductor device can be improved, and the molding material for semiconductor encapsulation and its manufacture thereof. A method and a semiconductor device using the semiconductor encapsulation molding material can be provided.

It is a flowchart for demonstrating the manufacturing method of the molding material for semiconductor encapsulation of Example 1. FIG. It is a flowchart for demonstrating the manufacturing method of the molding material for semiconductor encapsulation of Example 2.

Hereinafter, the present disclosure will be described in detail.
<Molding material for semiconductor encapsulation>
The semiconductor encapsulation molding material of the present disclosure (hereinafter, also simply referred to as encapsulation molding material) has a content of agglomerates and / or gel-like substances having a size of more than 100 μm of 50 ppm or less. When the content of agglomerates and / or gel-like substances having a size of more than 100 μm contained in the sealing molding material exceeds 50 ppm, the resin thickness on the chip of the semiconductor package becomes 100 μm or less. When the chip is sealed with a molding material, agglomerates and gel-like substances may appear as protrusions on the resin surface, causing problems such as abnormal appearance, wire deformation, and chip cracking. From this point of view, the content of agglomerates and / or gel-like substances having a size of more than 100 μm contained in the sealing molding material may be 30 ppm or less, 10 ppm or less, or 0 ppm. It may be.
Here, in the present specification, the agglomerates and gel-like substances having a size of more than 100 μm include agglomerates and gel-like substances of inorganic fillers, agglomerates and gel-like substances of inorganic fillers and silane coupling agents, and heat. Examples thereof include a reaction-cured product of a curable resin.

The content of agglomerates and / or gel-like substances having a size of more than 100 μm contained in the sealing molding material is, for example, weighed 150 g of a sample, dispersed in 200 cc of acetone, stirred for 30 minutes, and then nominally. It can be determined by filtering using a sieve having a mesh size of 106 μm and measuring the weight of the residue of agglomerates and gel-like substances larger than 106 μm in size.

The molding materials for semiconductor encapsulation of the present disclosure include epoxy resins, curing agents and inorganic fillers. The epoxy resin, the curing agent, and the inorganic filler are not particularly limited as long as they are usually used as an epoxy resin molding material for semiconductor encapsulation.

The epoxy resin used in the present disclosure is not particularly limited as long as it is generally used as an epoxy resin molding material for semiconductor encapsulation, and examples thereof include phenol novolac type epoxy resin and orthocresol novolac type epoxy resin. Phenols such as phenol, cresol, xylenol, resorcin, catechol, bisphenol A, bisphenol F and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene and formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, salicylaldehyde. Epoxy of novolak resin obtained by condensing or co-condensing a compound having an aldehyde group such as, bisphenol A, bisphenol F, bisphenol S, alkyl-substituted or unsubstituted biphenol, etc. Glycidyl ether type epoxy resin such as ether, stillben type epoxy resin, hydroquinone type epoxy resin, glycidyl ester type epoxy resin obtained by reaction of polybasic acid such as phthalic acid and dimer acid with epichlorohydrin, polyamine such as diaminodiphenylmethane and isocyanuric acid. Glycidylamine type epoxy resin obtained by the reaction of epichlorohydrin with epichlorohydrin, epoxidized product of cocondensation resin of dicyclopentadiene and phenols and / or naphthols, epoxy resin having naphthalene ring, phenol aralkyl resin, aralkyl such as naphthol aralkyl resin Examples include epoxies of type phenol resins, trimethylolpropane type epoxy resins, terpen-modified epoxy resins, linear aliphatic epoxy resins obtained by oxidizing olefin bonds with a peracid such as peracetic acid, and alicyclic epoxy resins. Be done. These may be used alone or in combination of two or more.

The curing agent used in the present disclosure is not particularly limited as long as it is generally used as an epoxy resin molding material for semiconductor encapsulation, but for example, phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenyl. A resin obtained by condensing or co-condensing phenols such as phenol and aminophenol and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde under an acidic catalyst. Examples thereof include phenol / aralkyl resins synthesized from phenols and / or naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, and aralkyl-type phenol resins such as naphthol / aralkyl resin. These may be used alone or in combination of two or more.

The inorganic filler used in the present disclosure is blended in a sealing molding material for reducing moisture absorption, reducing linear expansion coefficient, improving thermal conductivity and improving strength, and is, for example, fused silica, crystalline silica, or alumina. , Zircon, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllium, zirconia, zircone, fosterite, steatite, spinel, mulite, titania, etc. Examples include spherical beads and glass fiber. Further, examples of the flame-retardant inorganic filler include aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate and the like. These inorganic fillers may be used alone or in combination of two or more. Among them, fused silica may be used from the viewpoint of reducing the coefficient of linear expansion, and alumina may be used from the viewpoint of high thermal conductivity. Further, the shape of the inorganic filler may be spherical from the viewpoint of improving fluidity during molding and mold durability.

The average particle size of the inorganic filler may be 2 to 25 μm or 3 to 15 μm from the viewpoint of fluidity and moldability during molding.
In the present specification, the average particle size of the inorganic filler can be obtained by, for example, a laser diffraction type particle size distribution measuring device. The average particle size is the particle size (d50) at which the integrated volume is 50% in the particle size distribution measured by the same device.

The blending amount of the inorganic filler may be in the range of 70 to 97% by mass, 80 to 95% by mass, or 88 to 92% by mass in the molding material for semiconductor encapsulation. .. When it is 70% by mass or more, the reflow resistance is improved, and when it is 97% by mass or less, the fluidity is improved.

Further, the molding material for semiconductor encapsulation of the present disclosure includes a curing accelerator, a silane coupling agent, a mold release agent such as carbon black, carnauba wax or low molecular weight polyethylene, and flexibility of the molding material for encapsulation, if necessary. Silicone oil, rubber, etc. may be appropriately added to retain the wax.

<Manufacturing method of molding material for semiconductor encapsulation>
The method for producing a molding material for semiconductor encapsulation according to the first embodiment of the present disclosure (hereinafter, also simply referred to as the first embodiment) includes a mixing step of mixing raw materials including an epoxy resin, a curing agent and an inorganic filler. , A kneading step of kneading the mixture obtained in the mixing step to obtain a kneaded product, a rolling step of rolling the kneaded product obtained in the kneading step into a sheet-like composition with a rolling roll, and rolling in the rolling step. For semiconductor encapsulation, which comprises a cooling step of cooling the prepared sheet-like composition in a gas while transporting it on a cooling conveyor, and a crushing step of crushing the sheet-like composition cooled in the cooling step with a crusher. It is a method for producing a molding material, and further has a crushing / classification step of crushing / classifying an object to be crushed to a particle size of 100 μm or less.

In the first embodiment, the crushing / classification step is not particularly limited as long as it has a crushing / classification step, and the crushing / classification step may be performed before the mixing step, or after the mixing step and before the kneading step. , After the kneading step and before the rolling step, after the rolling step and before the cooling step, after the cooling step and before the crushing step, after the crushing step. You may go. Further, the crushing / classifying step may be performed within the same process as the crushing step, or may be performed as a step different from the crushing step. From the viewpoint of reducing the content of agglomerates and / or gel-like substances having a size of more than 100 μm contained in the obtained molding material for semiconductor encapsulation to 50 ppm or less, the pulverization / classification step may be performed after the kneading step. ..
Hereinafter, each step will be described in order.

(Mixing process)
The mixing step is a step of mixing raw materials including an epoxy resin, a curing agent, and an inorganic filler, and a conventionally known mixing method can be used. Examples of the mixing method include, but are not limited to, a blender method, a Henshell method, a pan mill method, a power mill method, and a vertical method.
Further, as the mixer, conventionally known ones can be used without particular limitation, and examples thereof include a V-type mixer, a Henschel mixer, a locking mixer, a nouter mixer, and a super mixer.

(Kneading process)
The kneading step is a step of kneading the mixture obtained in the mixing step to obtain a kneaded product. In this kneading step, the above-mentioned mixture is kneaded using a conventionally used kneader, and examples of the kneader include conventionally known biaxial kneaders, roll kneaders, and the like, and are particularly limited. is not it.

The twin-screw kneader has screw shafts that rotate in the same direction arranged in parallel in a cylinder in which a material supply port and a material discharge port after kneading are formed, and the material supplied from the material supply port is provided. It is kneaded while being fed forward with a screw blade.

Further, the roll kneading device has a driving means having a built-in speed reducer or the like, and has a pair of rolls composed of a first roll and a second roll arranged in parallel at regular intervals, and both ends of the first roll. It is provided with an interval adjusting mechanism unit connected to the unit to adjust the interval between the pair of rolls, and a kneading material is supplied between the pair of rolls, and then the pair of rolls are kneaded with each other by a driving means. The mixture is kneaded by driving in the direction of getting caught in between.

The kneading temperature may be 70 to 110 ° C. or 80 to 105 ° C.

(Rolling process)
The rolling step is a step of rolling the kneaded product obtained in the kneading step into a sheet-like composition with a rolling roll. Here, the thickness of the sheet-like composition may be 1 mm or more and 5 mm or less, and may be 1 mm or more and 3 mm or less in order to increase the cooling efficiency of the sheet-like composition.
The rolling roll temperature is usually 10 to 60 ° C, and may be 10 to 50 ° C.

(Cooling process)
The cooling step is a step of cooling the sheet-like composition obtained in the rolling step in a gas while transporting it on a cooling conveyor. In this cooling step, the sheet-like composition obtained in the rolling step is conveyed by a cooling conveyor and cooled while passing through a low-temperature gas atmosphere.

Here, the material and shape of the cooling conveyor that conveys the sheet-like composition is not particularly limited, but a mesh-shaped cooling conveyor that does not interfere with the circulation of low-temperature gas may be used. Further, from the viewpoint of cooling efficiency and workability, the cooling conveyor may be covered with a housing or the like.

Examples of the low-temperature gas include air, nitrogen gas, carbon dioxide gas, and the like, but air may be used from the viewpoint of workability. Nitrogen gas can be obtained from liquid nitrogen. In addition, carbon dioxide gas can be obtained from dry ice or the like. When the sheet-like composition is cooled in a gas, the sheet-like composition may be cooled by spraying a low-temperature gas. The sheet-like composition may be cooled to 5 to 30 ° C. or 10 to 15 ° C. while being conveyed by the cooling conveyor.

At this time, the temperature of the gas may be 0 to 15 ° C. or 0 to 10 ° C. Further, a gas having a temperature of 0 to 15 ° C. may be blown directly onto the sheet-like composition as cold air. When the temperature of the gas is 0 ° C. or higher, the cooling efficiency is good, the energy cost of the cooling device for generating the cooled gas is suppressed, and the economy is excellent. Further, when the temperature of the gas is 15 ° C. or lower, the cooling effect of the sheet-like composition can be sufficiently obtained. The wind speed when blowing cold air may be 1 to 50 m / sec. Air may be used as the gas used at this time.

(Crushing process)
The pulverization step is a step of pulverizing the sheet-like composition cooled in the cooling step with a pulverizer. In this step, the sheet-like composition is pulverized by a pulverizer used in a conventionally known general method for producing a molding material for semiconductor encapsulation to obtain a pulverized product. The crusher is not particularly limited as long as it can crush to a size of 5 mm or less, for example, a cutting mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a cutter mill, a grinder mill, and the like. Examples include speed mills. Above all, the crusher may be a speed mill.
The pulverization by a pulverizer may be performed in two or more steps, for example, the sheet-like composition is pulverized relatively coarsely by a coarse pulverizer or the like, and then further finely pulverized by a fine pulverizer to obtain a pulverized product.

The pulverization in the pulverization step may be performed in air having a low temperature and a low dew point. Further, the temperature of the air having a low temperature and a low dew point may be 10 ° C. or lower.

The crushed product obtained in the above crushing step may be temporarily stored in a filling tank.

(Crushing / classification process)
The crushing / classifying step is a step of crushing / classifying the object to be crushed to a particle size of 100 μm or less.
In this step, the object to be pulverized is pulverized so as to have a particle size range of 10 to 40 μm. By crushing the object to be crushed to a particle size of 100 μm or less, agglomerates such as inorganic fillers or gel-like substances generated in the manufacturing process are crushed more finely.
Here, in the present specification, the particle size means, for example, the particle size (d50) at which the integrated volume becomes 50% in the particle size distribution measured by the laser diffraction type particle size distribution measuring device.

Further, in the present specification, the crushed object is a raw material when the crushing / classifying step is performed before the mixing step, and when the crushing / classifying step is performed after the mixing step and before the kneading step. Is a mixture, and when the crushing / classifying step is performed after the kneading step and before the rolling step, it is a kneaded product, and the crushing / classifying step is performed after the rolling step and before the cooling step. In this case, it is a sheet-like composition, and when the crushing / classification step is performed after the cooling step and before the crushing step, it is a sheet-like composition, and the crushing / classification step is performed after the crushing step. In some cases, it is a crushed product.

As the crusher, the apparatus exemplified in the above section (crushing step) can be used.

The pulverization in this step may be performed at a low temperature of 10 ° C. or lower or in a frozen atmosphere. The temperature range may be −30 to 10 ° C., 20 to 5 ° C., or −10 to 0 ° C. By crushing in such a low temperature / freezing atmosphere, the sealing molding material becomes embrittled at low temperature, so that agglomerates such as fine inorganic fillers or gel-like substances generated in the manufacturing process are easily crushed. Will be done. Furthermore, it is also effective for finely pulverizing rubber-like additives.
As the cold source, for example, a liquefied nitrogen refrigerator is used. Further, as the cold source, a dry dehumidifier using a rotary rotor (low temperature low dew point air generator) or the like may be used.

The pulverized product obtained by the above pulverization is classified into a pulverized product having a particle size of 100 μm or less by sieve classification and air classification.
The mesh size used for sieving classification may be 60 to 100 μm or 60 to 80 μm.

Further, in this step, the crushing of the crushed object and the classification of the crushed crushed product may be performed at the same time. Examples of the device capable of crushing and classifying at the same time include a crusher with a built-in classifier having a crushing unit for crushing the crushed object and a classifying unit for classifying the crushed material. The crusher with a built-in classifier is not particularly limited. When the crushing object passes between the liner and the fixedly arranged liner, a refrigerating crushing device configured to repeatedly collide with the crushing object between both members may be used. .. Such a freezing and crushing apparatus is described in, for example, Japanese Patent Application Laid-Open No. 57-60060, Japanese Patent Application Laid-Open No. 2017-912, and the like.

From the viewpoint of efficiently crushing the object to be crushed, the rotation speed of the crusher with a built-in classifier may be 1000 to 8000 rpm, 2000 to 6000 rpm, or 2000 to 5000 rpm.

The molding material for semiconductor encapsulation obtained through the above steps has a content of agglomerates and / or gel-like substances having a size of more than 100 μm of 50 ppm or less, may be 30 ppm or less, and may be 10 ppm or less. It may be 0 ppm.

By using the semiconductor encapsulation molding material obtained through the above steps, even if the resin thickness on the chip is 100 μm or less, there are few protrusions / appearance defects, stacks, and chip cracks, and wire deformation is small and reliability is small. An excellent semiconductor device can be obtained.

The method for producing a molding material for semiconductor encapsulation according to the second embodiment of the present disclosure (hereinafter, also simply referred to as the second embodiment) includes a mixing step of mixing raw materials including an epoxy resin, a curing agent and an inorganic filler. A kneading step of kneading the mixture obtained in the mixing step to obtain a kneaded product, a first rolling step of rolling the kneaded product obtained in the kneading step into a sheet-like composition with a rolling roll, and the first rolling step. A first cooling step of cooling in a gas while transporting the sheet-like composition rolled in the rolling step 1 on a cooling conveyor and a sheet-like composition cooled in the first cooling step are carried out by a crusher. A first crushing step of crushing, a crushing / classification step of crushing / classifying the crushed product obtained in the first crushing step to a particle size of 100 μm or less, and a rolling roll of the crushed product obtained in the crushing / classification step. A second rolling step of rolling into a sheet shape, a second cooling step of cooling the sheet-like composition rolled in the second rolling step in a gas while being conveyed by a cooling conveyor, and the second cooling step. It has a second pulverization step of pulverizing the sheet-like composition cooled in the cooling step of the above with a pulverizer.

In the second embodiment, after the mixing step, the kneading step, the first rolling step, the first cooling step, and the first crushing step, the crushing / classification step is performed, and further, the second rolling step and the second. The cooling step and the second crushing step of the above are performed. Thereby, the size of the semiconductor encapsulation molding material can be processed to a desired size.
Hereinafter, each step will be described in order.

The mixing step, kneading step, first rolling step, first cooling step, and first crushing step in the second embodiment are the mixing step, kneading step, rolling step, and cooling step of the first embodiment, respectively. Since it is the same as the crushing process, detailed description thereof will be omitted.

(Crushing / classification process)
The crushing / classifying step in the second embodiment is performed after the first crushing step. Thereby, the size of the semiconductor encapsulation molding material can be processed to a desired size.
In the pulverization / classification step, the pulverized product obtained in the first pulverization step is pulverized to a particle size of 100 μm or less, and then classified into a pulverized product having a particle size of 100 μm or less. Since the pulverization method and the classification method are the same as the pulverization / classification step of the first embodiment, detailed description thereof will be omitted. Further, as the crushing device and the classifying device, the devices exemplified in the section (crushing / classifying step) of the first embodiment can be used.

(Second rolling process)
The second rolling step is a step of rolling the crushed product obtained in the crushing / classification step into a sheet using a rolling roll in the same manner as in the first rolling step. Here, the thickness of the sheet-like composition may be 1 mm or more and 5 mm or less, and may be 1 mm or more and 3 mm or less from the viewpoint of improving the cooling efficiency, as in the first rolling step.
The rolling roll temperature is usually 10 to 60 ° C, and may be 10 to 50 ° C.

(Second cooling step)
The second cooling step is a step of cooling the sheet-like composition obtained in the second rolling step in a gas while being conveyed by a cooling conveyor in the same manner as in the first cooling step.

(Second crushing step)
The second pulverization step is a step of pulverizing the sheet-like composition cooled in the second cooling step with a pulverizer in the same manner as in the first pulverization step. As the crushing device, the device exemplified in the section (grinding step) of the first embodiment can be used.

Further, the pulverized product obtained in the second pulverization step may be subjected to sieve classification and air classification.

The molding material for semiconductor encapsulation obtained through the above steps has a content of agglomerates and / or gel-like substances having a size of more than 100 μm of 50 ppm or less, may be 30 ppm or less, and may be 10 ppm or less. It may be 0 ppm.

The semiconductor encapsulation molding material obtained through the above steps may be stored, for example, in a storage in a low temperature atmosphere. The temperature of the storage in the low temperature atmosphere may be −5 to 5 ° C. or −5 to 3 ° C.

Further, the powder-granular semiconductor encapsulation molding material obtained through the above steps is processed into a tablet having an appropriate size and mass for transfer molding using a known tablet molding machine, and a tablet-shaped semiconductor seal is used. It may be used as a molding material for stopping.

<Semiconductor device>
The semiconductor device of the present disclosure comprises a semiconductor element sealed with the above-mentioned molding material for semiconductor encapsulation. Specifically, active elements such as semiconductor chips, transistors, diodes, and thyristers, and passive elements such as capacitors, resistors, and coils are mounted on support members such as lead frames, tape carriers, wiring boards, and silicon wafers. However, a semiconductor device in which a necessary portion is sealed with the semiconductor encapsulation molding material of the present disclosure can be mentioned.

The method for sealing a semiconductor element using the semiconductor encapsulation molding material of the present disclosure is not particularly limited, and examples thereof include a transfer molding method, an injection molding method, and a compression molding method.

Next, the present disclosure will be specifically described with reference to Examples, but the present disclosure is not limited to these examples.

(Example 1)
5.64 parts by mass of epoxy resin YL-6121H (trade name, manufactured by Mitsubishi Chemical Co., Ltd.) as a raw material for sealing molding material, and phenol resin MEH-7500 (trade name, manufactured by Meiwa Kasei Co., Ltd.) as a curing agent. 3.36 parts by mass, as an inorganic filler, spherical silica mixture FB-105FC (trade name, manufactured by Denki Kagaku Kogyo Co., Ltd., average particle size: 12 μm) 89 parts by mass, carnauba wax 0.3 parts by mass, as a curing accelerator , 2MZ-P (trade name, manufactured by Shikoku Kasei Co., Ltd.) 0.1 parts by mass, as a silane coupling agent, γ-glycidoxypropyltriethoxysilane 0.4 parts by mass, carbon black 0.2 parts by mass, 1 mm Prepare 0.05 parts by mass of agglomerates of spherical silica having a size of 2 mm or less and a coupling agent (content in the sealing molding material: 505 ppm) and treat them by each step shown in FIG. 1 to obtain a sealing molding material. rice field.

The above raw materials were put into a mixer (manufactured by Nippon Coke Industries Co., Ltd., trade name: FM mixer) and mixed for 3 minutes (mixing step).

The mixture obtained in the mixing step is put into a twin-screw kneader (manufactured by Kurimoto, Ltd., trade name: KRC-T-2) and kneaded under the conditions of kneading temperature: 100 ° C. and kneading time: 5 minutes. (Kneading process).

The kneaded product obtained in the kneading step was rolled to a thickness of 1 mm using a press roll having a surface temperature of 15 ° C. to obtain a sheet-like composition (rolling step).

The sheet-like composition obtained in the rolling step was conveyed on a steel belt conveyor and cooled by applying cold air of 15 ° C. or lower (cooling step).

The sheet-like composition cooled in the cooling step was put into a speed mill (manufactured by Gohashi Seisakusho Co., Ltd.) and crushed at a temperature of 8 ° C. until a 2 mm mesh pass was obtained (crushing step).

The crushed product obtained in the crushing process is put into a crusher with a built-in classifier (manufactured by Hosokawa Micron Co., Ltd., trade name: Linlex Mill LX), and at a temperature of 8 ° C., the crushing disk is 3000 rpm, the classifying rotor is 2300 rpm, and the supply amount is 100 kg /. It was crushed under the condition of time, pulverized products having a particle size of 100 μm or less were classified, and only the pulverized products were transported to the next step (crushing / classification step).

A crushed product with a particle size of 100 μm or less obtained in the crushing / classification process is processed into a columnar tablet with a diameter of 14 mm and a height of 20 mm using a high-pressure tableting machine (manufactured by Kikusui Seisakusho Co., Ltd., trade name: BARPRESS) and transferred. A tablet for molding (molding material for sealing) was obtained (tablet molding process).

(Example 2)
5.64 parts by mass of epoxy resin YL-6121H (trade name, manufactured by Mitsubishi Chemical Co., Ltd.) as a raw material for sealing molding material, and phenol resin MEH-7500 (trade name, manufactured by Meiwa Kasei Co., Ltd.) as a curing agent. 3.36 parts by mass, as an inorganic filler, spherical silica mixture FB-105FC (trade name, manufactured by Denki Kagaku Kogyo Co., Ltd., average particle size: 12 μm) 89 parts by mass, carnauba wax 0.3 parts by mass, as a curing accelerator , 2MZ-P (trade name, manufactured by Shikoku Kasei Co., Ltd.) 0.1 parts by mass, as a silane coupling agent, γ-glycidoxypropyltriethoxysilane 0.4 parts by mass, carbon black 0.2 parts by mass, 1 mm 0.05 parts by mass of agglomerates of spherical silica having a size of 2 mm or less and a coupling agent (content in the sealing molding material: 505 ppm) are prepared and processed by each step shown in FIG. 2 to obtain a sealing molding material. rice field.

The above raw materials were put into a mixer (manufactured by Nippon Coke Industries Co., Ltd., trade name: FM mixer) and mixed for 3 minutes (mixing step).

The mixture obtained in the mixing step is put into a twin-screw kneader (manufactured by Kurimoto, Ltd., trade name: KRC-T-2) and kneaded under the conditions of kneading temperature: 100 ° C. and kneading time: 5 minutes. (Kneading process).

The kneaded product obtained in the kneading step was rolled to a thickness of 1 mm using a press roll having a surface temperature of 15 ° C. to obtain a sheet-like composition (first rolling step).

The sheet-like composition obtained in the first rolling step was conveyed on a steel belt conveyor and cooled by applying cold air of 15 ° C. or lower (first cooling step).

The sheet-like composition cooled in the first cooling step was put into a speed mill (manufactured by Gohashi Seisakusho Co., Ltd.) and crushed at a temperature of 8 ° C. until a 2 mm mesh pass was obtained (first crushing step).

The crushed product obtained in the first crushing step is put into a crusher with a built-in classifier (manufactured by Hosokawa Micron Co., Ltd., trade name: Linlex Mill LX), and supplied at a temperature of 8 ° C. with a crushing disk of 3000 rpm and a classifying rotor of 2300 rpm. The pulverized product was pulverized under the condition of an amount of 100 kg / hour, a pulverized product having a particle size of 100 μm or less was classified, and only the pulverized product was transported to the next step (crushing / classification step).

The pulverized product having a particle size of 100 μm or less obtained in the pulverization / classification step was rolled to a thickness of 1 mm using a press roll having a surface temperature of 40 ° C. to obtain a sheet-like composition (second rolling step).

The sheet-like composition obtained in the second rolling step was conveyed on a steel belt conveyor and cooled by applying cold air of 15 ° C. or lower (second cooling step).

The sheet-like composition cooled in the second cooling step was put into a speed mill (manufactured by Gohashi Seisakusho Co., Ltd.) and crushed at a temperature of 8 ° C. until a 2 mm mesh pass was obtained (second crushing step).

The pulverized product obtained in the second pulverization step was sieved using a sieve having an opening of 0.2 to 2.0 mm (sieving step).

(Comparative Example 1)
The sealing molding material of Comparative Example 1 in the same manner as in Example 2 except that the first rolling step, the first cooling step, the first crushing step, and the crushing / classifying step were not performed in Example 2. Got

(Evaluation method)
[Evaluation of agglutinating and / or gel-like substance removability in molding material for sealing]
150 g of each of the sealing molding materials obtained in Examples 1 and 2 and Comparative Example 1 was weighed, dispersed in 200 cc of acetone, and stirred for 30 minutes. Then, it is filtered using a sieve having a nominal opening of 106 μm, and the weight of the agglomerates larger than 106 μm and the residue of the gel-like substance is measured. / Or the content of the gel-like substance was calculated and evaluated according to the following criteria.
A: 10ppm or less B: Over 10ppm, 50ppm or less C: Over 50ppm

[Evaluation of appearance of semiconductor devices after molding]
Using the sealing molding material, FBGA (50 mm × 50 mm × 0.54 mm) set so that the resin thickness on the chip is 100 μm was molded at 175 ° C. for 2 minutes, and then the surface of the molded product was visually observed. It was observed and evaluated according to the following criteria.
A: No protrusions C: With protrusions

Claims (5)

A molding material for semiconductor encapsulation in which the content of agglomerates and / or gel-like substances having a size of more than 100 μm is 50 ppm or less. A mixing step of mixing raw materials including epoxy resin, curing agent and inorganic filler, and
A kneading step of kneading the mixture obtained in the mixing step to obtain a kneaded product, and
A rolling step of rolling the kneaded product obtained in the kneading step into a sheet-like composition with a rolling roll, and a rolling step.
A cooling step in which the sheet-like composition rolled in the rolling step is cooled in a gas while being conveyed by a cooling conveyor, and a cooling step.
A crushing step of crushing the sheet-like composition cooled in the cooling step with a crusher, and a crushing step.
It is a manufacturing method of a molding material for semiconductor encapsulation having
The method for producing a molding material for semiconductor encapsulation according to claim 1, further comprising a pulverization / classification step of pulverizing / classifying the object to be pulverized to a particle size of 100 μm or less. A mixing step of mixing raw materials including epoxy resin, curing agent and inorganic filler, and
A kneading step of kneading the mixture obtained in the mixing step to obtain a kneaded product, and
The first rolling step of rolling the kneaded product obtained in the kneading step into a sheet-like composition with a rolling roll, and
A first cooling step in which the sheet-like composition rolled in the first rolling step is cooled in a gas while being conveyed by a cooling conveyor, and a first cooling step.
The first pulverization step of pulverizing the sheet-like composition cooled in the first cooling step with a pulverizer, and
A pulverization / classification step of pulverizing / classifying the pulverized product obtained in the first pulverization step to a particle size of 100 μm or less.
A second rolling step of rolling the crushed product obtained in the crushing / classification step into a sheet with a rolling roll, and
A second cooling step in which the sheet-like composition rolled in the second rolling step is cooled in a gas while being conveyed by a cooling conveyor, and a second cooling step.
The method for producing a semiconductor encapsulating molding material according to claim 1, further comprising a second pulverization step of pulverizing the sheet-like composition cooled in the second cooling step with a pulverizer. The method for producing a molding material for semiconductor encapsulation according to claim 2 or 3, wherein in the pulverization / classification step, pulverization / classification is performed in a low temperature atmosphere of 10 ° C. or lower. A semiconductor device in which a semiconductor element is sealed with the molding material for semiconductor encapsulation according to claim 1.

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