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JPS6490560A - Thin-film transistor - Google Patents

Thin-film transistor

Info

Publication number
JPS6490560A
JPS6490560A JP24887887A JP24887887A JPS6490560A JP S6490560 A JPS6490560 A JP S6490560A JP 24887887 A JP24887887 A JP 24887887A JP 24887887 A JP24887887 A JP 24887887A JP S6490560 A JPS6490560 A JP S6490560A
Authority
JP
Japan
Prior art keywords
electrode
drain electrode
source electrode
onto
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24887887A
Other languages
Japanese (ja)
Inventor
Shunichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP24887887A priority Critical patent/JPS6490560A/en
Priority to US07/241,304 priority patent/US5032883A/en
Publication of JPS6490560A publication Critical patent/JPS6490560A/en
Priority to US07/503,268 priority patent/US5003356A/en
Priority to US07/503,269 priority patent/US5166085A/en
Priority to US07/503,270 priority patent/US5055899A/en
Priority to US07/831,002 priority patent/US5229644A/en
Priority to US08/041,537 priority patent/US5327001A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To fine an active matrix panel for a thin-film transistor with excellent yield by forming a gate electrode, a gate insulating film and first and second semiconductor layers while peripheral shapes are equalized. CONSTITUTION:A gate electrode 21, a gate insulating film 22 and a semiconductor film 23 are laminated successively onto a transparent insulating substrate 1 while peripheral shapes are equalized. A contact layer 29 and an ohmic electrode 28 having the same shape as the periphery of the semiconductor film 23 are further laminated at both ends except a channel section on the semiconductor film 23. A drain electrode 26 is shaped onto one ohmic electrode 28 and a source electrode 27 onto the other ohmic electrode. Currents toward the source electrode 27 from the drain electrode 26 are flowed When the potential of the drain electrode 26 is higher than that of the source electrode 27, and currents are flowed in the opposite direction when the potential of the source electrode is inversely higher than that of the drain electrode 26.
JP24887887A 1987-09-09 1987-10-01 Thin-film transistor Pending JPS6490560A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP24887887A JPS6490560A (en) 1987-10-01 1987-10-01 Thin-film transistor
US07/241,304 US5032883A (en) 1987-09-09 1988-09-07 Thin film transistor and method of manufacturing the same
US07/503,268 US5003356A (en) 1987-09-09 1990-04-02 Thin film transistor array
US07/503,269 US5166085A (en) 1987-09-09 1990-04-02 Method of manufacturing a thin film transistor
US07/503,270 US5055899A (en) 1987-09-09 1990-04-02 Thin film transistor
US07/831,002 US5229644A (en) 1987-09-09 1992-02-05 Thin film transistor having a transparent electrode and substrate
US08/041,537 US5327001A (en) 1987-09-09 1993-04-01 Thin film transistor array having single light shield layer over transistors and gate and drain lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24887887A JPS6490560A (en) 1987-10-01 1987-10-01 Thin-film transistor

Publications (1)

Publication Number Publication Date
JPS6490560A true JPS6490560A (en) 1989-04-07

Family

ID=17184774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24887887A Pending JPS6490560A (en) 1987-09-09 1987-10-01 Thin-film transistor

Country Status (1)

Country Link
JP (1) JPS6490560A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054615A (en) * 2007-01-04 2012-03-15 Beijing Boe Optoelectronics Technology Co Ltd Tft array structure and method of manufacturing the same
TWI509700B (en) * 2008-03-10 2015-11-21 Semiconductor Energy Lab Thin film transistor, manufacturing method thereof, display device, and manufacturing method of display device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190061A (en) * 1982-04-28 1983-11-05 Toshiba Corp Amorphous silicon semiconductor device
JPS6014473A (en) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd Electrode structure of thin film transistor
JPS61185783A (en) * 1985-02-13 1986-08-19 シャープ株式会社 Manufacture of thin film transistor
JPS61187272A (en) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd Thin-film field-effect transistor and manufacture thereof
JPS62141777A (en) * 1985-12-17 1987-06-25 Oki Electric Ind Co Ltd Manufacturing method of thin film transistor
JPS6459216A (en) * 1987-08-31 1989-03-06 Toshiba Corp Thin film transistor array for liquid crystal display and its manufacture

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190061A (en) * 1982-04-28 1983-11-05 Toshiba Corp Amorphous silicon semiconductor device
JPS6014473A (en) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd Electrode structure of thin film transistor
JPS61185783A (en) * 1985-02-13 1986-08-19 シャープ株式会社 Manufacture of thin film transistor
JPS61187272A (en) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd Thin-film field-effect transistor and manufacture thereof
JPS62141777A (en) * 1985-12-17 1987-06-25 Oki Electric Ind Co Ltd Manufacturing method of thin film transistor
JPS6459216A (en) * 1987-08-31 1989-03-06 Toshiba Corp Thin film transistor array for liquid crystal display and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054615A (en) * 2007-01-04 2012-03-15 Beijing Boe Optoelectronics Technology Co Ltd Tft array structure and method of manufacturing the same
US8816346B2 (en) 2007-01-04 2014-08-26 Beijing Boe Optoelectronics Technology Co., Ltd. TFT array substrate and manufacturing method thereof
TWI509700B (en) * 2008-03-10 2015-11-21 Semiconductor Energy Lab Thin film transistor, manufacturing method thereof, display device, and manufacturing method of display device

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