[go: up one dir, main page]

JPS6490524A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6490524A
JPS6490524A JP24944387A JP24944387A JPS6490524A JP S6490524 A JPS6490524 A JP S6490524A JP 24944387 A JP24944387 A JP 24944387A JP 24944387 A JP24944387 A JP 24944387A JP S6490524 A JPS6490524 A JP S6490524A
Authority
JP
Japan
Prior art keywords
substrate
iii
compound semiconductor
plateau
planes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24944387A
Other languages
Japanese (ja)
Inventor
Naotaka Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24944387A priority Critical patent/JPS6490524A/en
Publication of JPS6490524A publication Critical patent/JPS6490524A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase the integration of element on a substrate, by employing a series of processes in which a plateau-shaped structure having both planes (100) and (110) is formed on a IV crystal substrate, and a III-V compound semiconductor layer is then deposited over the substrate body. CONSTITUTION:First, plateau-shaped structures 14, each of which has both planes (100) and (110), are formed on a IV crystal substrate 11, respectively. Subsequently, a III-V compound semiconductor layer 16 is deposited over the substrate body using an atomic layer epitaxial growth method. Now, a III source gas and a V source gas are alternately supplied to the substrate 11, which provides the atomic layer epitaxial growth of the III-V compound semiconductor. Therefore, the isolation between elements formed on the substrate can be easily performed without the process being complicated. Accordingly, the integration of the element on the substrate can be effectively increased.
JP24944387A 1987-10-01 1987-10-01 Manufacture of semiconductor device Pending JPS6490524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24944387A JPS6490524A (en) 1987-10-01 1987-10-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24944387A JPS6490524A (en) 1987-10-01 1987-10-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6490524A true JPS6490524A (en) 1989-04-07

Family

ID=17193045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24944387A Pending JPS6490524A (en) 1987-10-01 1987-10-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6490524A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US9330908B2 (en) 2013-06-25 2016-05-03 Globalfoundries Inc. Semiconductor structure with aspect ratio trapping capabilities

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US9330908B2 (en) 2013-06-25 2016-05-03 Globalfoundries Inc. Semiconductor structure with aspect ratio trapping capabilities

Similar Documents

Publication Publication Date Title
JPS6490524A (en) Manufacture of semiconductor device
EP0363689A3 (en) Semiconductor devices manufacture using selective epitaxial growth and poly-si deposition in the same apparatus
JPS6417421A (en) Method of building up wafer on insulation
JPS6444065A (en) Manufacture of reverse silicon on insulator semiconductor device with pedestal structure
JPS6482615A (en) Manufacture of semiconductor element
GB2106419A (en) Growth of structures based on group iv semiconductor materials
JPS5516464A (en) Method of forming wafer for semiconductor device
EP0193298A3 (en) Method for the formation of epitaxial layers for integrated circuits
JPS5389374A (en) Production of semiconductor device
JPS57187936A (en) Manufacture of 3-5 family compound semiconductor element
WO1987004854A3 (en) Liquid epitaxial process for producing three-dimensional semiconductor structures
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS5323559A (en) Production of compound semiconductor
JPS5740939A (en) P-n junction formation
JPS649895A (en) Method for growing iii-v compound semiconductor crystal on si substrate
JPS5379472A (en) Manufacture of bipolar type ic
JPS57121220A (en) Semiconductor device and manufacture thereof
JPH02135779A (en) Insulated-gate field-effect transistor and manufacture thereof
JPS51140474A (en) Method of fabricating semiconductor crystal
GB1440627A (en) Method for manufacturing integrated circuits
JPS5656626A (en) Manufacture of 3-5 group compound semiconductor thin film
JPS6410620A (en) Manufacture of semiconductor device
JPS6477118A (en) Manufacture of ga1-xalxas epitaxial wafer