JPS6482673A - Manufacture of thin film semiconductor element - Google Patents
Manufacture of thin film semiconductor elementInfo
- Publication number
- JPS6482673A JPS6482673A JP62241489A JP24148987A JPS6482673A JP S6482673 A JPS6482673 A JP S6482673A JP 62241489 A JP62241489 A JP 62241489A JP 24148987 A JP24148987 A JP 24148987A JP S6482673 A JPS6482673 A JP S6482673A
- Authority
- JP
- Japan
- Prior art keywords
- ohmic contact
- layer
- contact layer
- laminated
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To reduce an OFF current generated when holes exceed a potential barrier if a gate electrode is negatively biased by nitriding the surface of a semiconductor layer and then laminating an ohmic contact layer thereon. CONSTITUTION:A glass substrate 1 formed with a gate electrode 2 is mounted on a plasma CVD system, and an insulating film 3 is laminated. Then, a semiconductor layer 4 is laminated on the film 3 in the same CVD system. Thereafter, the surface of the layer 4 is plasma nitrided in the same system. Further, an ohmic contact layer is laminated on a nitrided and carbonized or oxidized layer 4a in the same system. The thus treated substrate 1 is removed from the system, and an ohmic contact layer 5 on a channel is removed by photoetching. The substrate 1 is again mounted in the system, and a protective film 6 is formed. Thus, nitrogen, carbon or oxygen is added to the ohmic contact layer, and its energy band gap is extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62241489A JPS6482673A (en) | 1987-09-25 | 1987-09-25 | Manufacture of thin film semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62241489A JPS6482673A (en) | 1987-09-25 | 1987-09-25 | Manufacture of thin film semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6482673A true JPS6482673A (en) | 1989-03-28 |
Family
ID=17075079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62241489A Pending JPS6482673A (en) | 1987-09-25 | 1987-09-25 | Manufacture of thin film semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482673A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174170A (en) * | 1988-12-06 | 1990-07-05 | Ind Technol Res Inst | Thin-film transistor and two-layer polysilicon thin-film structure for thin-film resistor |
| WO2009128542A1 (en) * | 2008-04-18 | 2009-10-22 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| WO2010001998A1 (en) * | 2008-07-03 | 2010-01-07 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
-
1987
- 1987-09-25 JP JP62241489A patent/JPS6482673A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174170A (en) * | 1988-12-06 | 1990-07-05 | Ind Technol Res Inst | Thin-film transistor and two-layer polysilicon thin-film structure for thin-film resistor |
| WO2009128542A1 (en) * | 2008-04-18 | 2009-10-22 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| JP2009278057A (en) * | 2008-04-18 | 2009-11-26 | Kobe Steel Ltd | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| US8299614B2 (en) | 2008-04-18 | 2012-10-30 | Kobe Steel, Ltd. | Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device |
| TWI413252B (en) * | 2008-04-18 | 2013-10-21 | Kobe Steel Ltd | A wiring structure, a thin film transistor substrate, a method of manufacturing the same, and a display device |
| WO2010001998A1 (en) * | 2008-07-03 | 2010-01-07 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| JP2010245495A (en) * | 2008-07-03 | 2010-10-28 | Kobe Steel Ltd | Wiring structure, thin film transistor substrate, manufacturing method thereof, and display device |
| US8535997B2 (en) | 2008-07-03 | 2013-09-17 | Kobe Steel, Ltd. | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
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