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JPS6482666A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS6482666A
JPS6482666A JP62242306A JP24230687A JPS6482666A JP S6482666 A JPS6482666 A JP S6482666A JP 62242306 A JP62242306 A JP 62242306A JP 24230687 A JP24230687 A JP 24230687A JP S6482666 A JPS6482666 A JP S6482666A
Authority
JP
Japan
Prior art keywords
photodetector
film
light
insulating
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62242306A
Other languages
Japanese (ja)
Inventor
Hirofumi Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62242306A priority Critical patent/JPS6482666A/en
Publication of JPS6482666A publication Critical patent/JPS6482666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve optical sensitivity by effectively introducing to a photodetector a light incident to a section except the photodetector and a light which is transmitted therethrough without absorbing to the photodetector. CONSTITUTION:An insulating film 12 is operated as both to protect and insulating a solid stage image sensor, covers a photodetector and a charge transfer unit, and is formed in a circular arc shape swelled at a photodetector region as a center. The same circular-arclike optical reflecting film 13 as a circular- arclike insulating element 12 is formed on the element 12. The film 13 is so formed as to cover the photodetector and the charge transfer unit, and so shaped to have a curvature that the light reflected at the film 13 is concentrated at the photodetector. Thus, the light incident to a section except the photodetector and the light transmitted therethrough without absorbing to the photodetector are reflected and introduced to the photodetector. The substance for forming the film 13 may include not only metal, such as aluminum, gold, but substances having high reflectivity, such as metal silicides, and the film 13 may include substances having high light transmittance, such as silicon oxide film, etc.
JP62242306A 1987-09-25 1987-09-25 Solid-state image sensor Pending JPS6482666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242306A JPS6482666A (en) 1987-09-25 1987-09-25 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242306A JPS6482666A (en) 1987-09-25 1987-09-25 Solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS6482666A true JPS6482666A (en) 1989-03-28

Family

ID=17087262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242306A Pending JPS6482666A (en) 1987-09-25 1987-09-25 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS6482666A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007013147A (en) * 2005-06-30 2007-01-18 Taiwan Semiconductor Manufacturing Co Ltd Back-illuminated semiconductor device
JP2007027604A (en) * 2005-07-21 2007-02-01 Matsushita Electric Ind Co Ltd Imaging device
EP2161751A1 (en) * 2008-09-05 2010-03-10 Commissariat à l'Energie Atomique CMOS imager with light reflectors
US7791170B2 (en) 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
JP2011054963A (en) * 2009-08-31 2011-03-17 Internatl Business Mach Corp <Ibm> Image sensor and method of manufacturing the same
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
CN102157534A (en) * 2010-01-15 2011-08-17 三星电子株式会社 Unit picture elements, back-side illumination cmos image sensors including the unit picture elements and methods of manufacturing the unit picture elements
US8525286B2 (en) 2006-05-09 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US8704277B2 (en) 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007013147A (en) * 2005-06-30 2007-01-18 Taiwan Semiconductor Manufacturing Co Ltd Back-illuminated semiconductor device
JP2007027604A (en) * 2005-07-21 2007-02-01 Matsushita Electric Ind Co Ltd Imaging device
US8790954B2 (en) 2006-05-09 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US8704277B2 (en) 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor
US8525286B2 (en) 2006-05-09 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US7791170B2 (en) 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
US7994032B2 (en) 2006-07-10 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making deep junction for electrical crosstalk reduction of an image sensor
US8324002B2 (en) 2007-09-24 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor element for backside-illuminated sensor
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
FR2935839A1 (en) * 2008-09-05 2010-03-12 Commissariat Energie Atomique CMOS IMAGE SENSOR WITH LIGHT REFLECTION
US8735953B2 (en) 2008-09-05 2014-05-27 Commissariat A L'energie Atomique Light reflecting CMOS image sensor
EP2161751A1 (en) * 2008-09-05 2010-03-10 Commissariat à l'Energie Atomique CMOS imager with light reflectors
JP2011054963A (en) * 2009-08-31 2011-03-17 Internatl Business Mach Corp <Ibm> Image sensor and method of manufacturing the same
CN102157534A (en) * 2010-01-15 2011-08-17 三星电子株式会社 Unit picture elements, back-side illumination cmos image sensors including the unit picture elements and methods of manufacturing the unit picture elements

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