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JPS64786A - Semiconductor laser light source - Google Patents

Semiconductor laser light source

Info

Publication number
JPS64786A
JPS64786A JP31400087A JP31400087A JPS64786A JP S64786 A JPS64786 A JP S64786A JP 31400087 A JP31400087 A JP 31400087A JP 31400087 A JP31400087 A JP 31400087A JP S64786 A JPS64786 A JP S64786A
Authority
JP
Japan
Prior art keywords
semiconductor laser
lens
fixed
distance
horizontal part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31400087A
Other languages
Japanese (ja)
Other versions
JPH01786A (en
Inventor
Shigeru Aoyama
Yasumasa Sakai
Shiro Ogata
Tokuo Inoue
Maki Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP62-314000A priority Critical patent/JPH01786A/en
Priority claimed from JP62-314000A external-priority patent/JPH01786A/en
Publication of JPS64786A publication Critical patent/JPS64786A/en
Publication of JPH01786A publication Critical patent/JPH01786A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain a semiconductor laser light sorce whose light axis and the like can be adjusted easily and whose optical characteristics are hardly varied by the variation of an external environment by a method wherein 1st and 2nd fixing tables to which a semiconductor laser and an uneven interval diffraction lattice are attached are provided and their linear expansion coefficients are selected properly to adjust the distance between the semiconductor laser and the uneven interval diffraction lattice automatically so as to have a certain relation with a varying focul distance.
CONSTITUTION: Fixing tables 3 and 4 are fixed to a stem 6. The fixing table 3 is composed of an attached part 31 fixed to the stem 6 and a horizontal part 32 to which a semiconductor laser 1 is fixed. The fixing table 4 is composed of a horizontal part 41 fixed to the stem 6 and, its tip part 42 to which a lens 2 is fixed. An optical system containing the semiconductor laser 1 and the lens 2 is housed in a cap 5 to reduce the influence of an external environment. At that time, the fluctuation of the focal distance of the lens caused by the variation of the oscillation wavelength of the laser created by the temperature variation and the fluctuation of the focal distance caused by the thermal expansion and contraction of the lens material cancel each other but not completely. Then, when the temperature rises, the horizontal part 32 is made to show a larger thermal expansion than the horizontal part 41 and the distance between the semiconductor laser 1 and the lens 2 is reduced to follow the focal distance varied by the temperature.
COPYRIGHT: (C)1989,JPO&Japio
JP62-314000A 1987-02-27 1987-12-14 semiconductor laser light source Pending JPH01786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-314000A JPH01786A (en) 1987-02-27 1987-12-14 semiconductor laser light source

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-43029 1987-02-27
JP4302987 1987-02-27
JP62-314000A JPH01786A (en) 1987-02-27 1987-12-14 semiconductor laser light source

Publications (2)

Publication Number Publication Date
JPS64786A true JPS64786A (en) 1989-01-05
JPH01786A JPH01786A (en) 1989-01-05

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023502440A (en) * 2019-11-21 2023-01-24 イオテック，エルエルシー temperature stabilized holographic sight

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915205A (en) * 1982-07-17 1984-01-26 Canon Inc Laser unit
JPS5915206A (en) * 1982-07-17 1984-01-26 Canon Inc Laser unit
JPS59216116A (en) * 1983-05-23 1984-12-06 Pioneer Electronic Corp Semiconductor laser
JPS61150394A (en) * 1984-12-25 1986-07-09 Ricoh Co Ltd Semiconductor laser-beam source device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915205A (en) * 1982-07-17 1984-01-26 Canon Inc Laser unit
JPS5915206A (en) * 1982-07-17 1984-01-26 Canon Inc Laser unit
JPS59216116A (en) * 1983-05-23 1984-12-06 Pioneer Electronic Corp Semiconductor laser
JPS61150394A (en) * 1984-12-25 1986-07-09 Ricoh Co Ltd Semiconductor laser-beam source device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023502440A (en) * 2019-11-21 2023-01-24 イオテック，エルエルシー temperature stabilized holographic sight
US11709333B2 (en) 2019-11-21 2023-07-25 Eotech, Llc Temperature stabilized holographic sight

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