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JPS6477964A - Fine-grain transistor - Google Patents

Fine-grain transistor

Info

Publication number
JPS6477964A
JPS6477964A JP62235353A JP23535387A JPS6477964A JP S6477964 A JPS6477964 A JP S6477964A JP 62235353 A JP62235353 A JP 62235353A JP 23535387 A JP23535387 A JP 23535387A JP S6477964 A JPS6477964 A JP S6477964A
Authority
JP
Japan
Prior art keywords
layer
gaas
fine grains
drain electrode
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62235353A
Other languages
Japanese (ja)
Other versions
JP2533134B2 (en
Inventor
Yasutaka Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62235353A priority Critical patent/JP2533134B2/en
Publication of JPS6477964A publication Critical patent/JPS6477964A/en
Application granted granted Critical
Publication of JP2533134B2 publication Critical patent/JP2533134B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enlarge length of a tunnel while enabling heterojunction of semiconductor layers to be formed with good controllability, by a method wherein the second semiconductor layer joins fine grains consisting of an electrically conductive substance and the semiconductor layer, a source electrode and a drain electrode for tunneling a low barrier. CONSTITUTION:Fine grains consist of an undoped GaAs layer 18, an n<+>-GaAs layer (the first semiconductor layer) 19 and gold 11. And a source consists of an undoped GaAs layer 18, the n<+>-GaAs layer 19' and a source electrode 12, a drain consists of the undoped GaAs layer 18', the n<+>-GaAs layer 19' and a drain electrode, while an AlxGa1-xAs layer 17 joins the fine grains with the source electrode and the fine grains with the drain electrode, as the second semiconductor layer. Then, x value of the layer 17 is made 0.05 to be a crystal extremely near a GaAs crystal for being heterojoined to form a low barrier. Further, the n<+>-GaAs layers 19 and 19', which are ohmic-contacted with the particles, the source electrode and the drain electrode, contain many impurities being reduced and retreated so that a conductive zone EC occupys a lower energy level than the Fermilevel.
JP62235353A 1987-09-18 1987-09-18 Particulate transistor Expired - Fee Related JP2533134B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235353A JP2533134B2 (en) 1987-09-18 1987-09-18 Particulate transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235353A JP2533134B2 (en) 1987-09-18 1987-09-18 Particulate transistor

Publications (2)

Publication Number Publication Date
JPS6477964A true JPS6477964A (en) 1989-03-23
JP2533134B2 JP2533134B2 (en) 1996-09-11

Family

ID=16984831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235353A Expired - Fee Related JP2533134B2 (en) 1987-09-18 1987-09-18 Particulate transistor

Country Status (1)

Country Link
JP (1) JP2533134B2 (en)

Also Published As

Publication number Publication date
JP2533134B2 (en) 1996-09-11

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Legal Events

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