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JPS6477155A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6477155A
JPS6477155A JP23398987A JP23398987A JPS6477155A JP S6477155 A JPS6477155 A JP S6477155A JP 23398987 A JP23398987 A JP 23398987A JP 23398987 A JP23398987 A JP 23398987A JP S6477155 A JPS6477155 A JP S6477155A
Authority
JP
Japan
Prior art keywords
substrate
power source
integrated circuit
potential
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23398987A
Other languages
Japanese (ja)
Other versions
JPH07120746B2 (en
Inventor
Hisao Takeda
Naoto Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62233989A priority Critical patent/JPH07120746B2/en
Priority to US07/244,918 priority patent/US4933573A/en
Publication of JPS6477155A publication Critical patent/JPS6477155A/en
Publication of JPH07120746B2 publication Critical patent/JPH07120746B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make a substrate low in potential to prevent a parasitic current from flowing by a method wherein a junction isolated P-type substrate is insulated from a ground potential and made to be connected with a power source whose potential is lower than that of the substrate through a terminal. CONSTITUTION:A pixel 10 is connected with an X output terminal 15 and a Y output terminal 25 of an X electrode drive integrated circuit 1 and a Y electrode drive integrated circuit 2 respectively which control the charge and discharge of the pixel 10. Both the output terminals 15 and 25 are connected with high voltage power source terminals 18 and 28 through the intermediary of H power transistors 11 and 21 which control the charge of a load condenser, and connected with ground terminals 19 and 29 through the intermediary of L power transistors 12 and 22. A voltage variable direct current power source 9 is made to be connected with a terminal 8 connected with a substrate of an integrated circuit 1 and the ground terminals 19 and 29 as a negative power source. The potential of the substrate is made to be lowest in a system through the negative power source 9 so as not to cause damage to an electric equipment system due to a parasitic diode, parasitic capacitance, or the like which are ievitably consituted between the substrate and the integrated devices.
JP62233989A 1987-09-18 1987-09-18 Semiconductor integrated circuit device Expired - Lifetime JPH07120746B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62233989A JPH07120746B2 (en) 1987-09-18 1987-09-18 Semiconductor integrated circuit device
US07/244,918 US4933573A (en) 1987-09-18 1988-09-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62233989A JPH07120746B2 (en) 1987-09-18 1987-09-18 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6477155A true JPS6477155A (en) 1989-03-23
JPH07120746B2 JPH07120746B2 (en) 1995-12-20

Family

ID=16963800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62233989A Expired - Lifetime JPH07120746B2 (en) 1987-09-18 1987-09-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH07120746B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475273A (en) * 1991-12-05 1995-12-12 Sgs Thomson Microelectronics Smart power integrated circuit with dynamic isolation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09146108A (en) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd Liquid crystal display device and its driving method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158647A (en) * 1979-05-29 1980-12-10 Hitachi Ltd Multiple power source semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158647A (en) * 1979-05-29 1980-12-10 Hitachi Ltd Multiple power source semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475273A (en) * 1991-12-05 1995-12-12 Sgs Thomson Microelectronics Smart power integrated circuit with dynamic isolation

Also Published As

Publication number Publication date
JPH07120746B2 (en) 1995-12-20

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