JPS6476903A - Apparatus for producing oxide superconducting material - Google Patents
Apparatus for producing oxide superconducting materialInfo
- Publication number
- JPS6476903A JPS6476903A JP62231887A JP23188787A JPS6476903A JP S6476903 A JPS6476903 A JP S6476903A JP 62231887 A JP62231887 A JP 62231887A JP 23188787 A JP23188787 A JP 23188787A JP S6476903 A JPS6476903 A JP S6476903A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- chamber
- superconducting material
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000011224 oxide ceramic Substances 0.000 abstract 2
- 229910052574 oxide ceramic Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000005587 bubbling Effects 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 abstract 1
- 229910052747 lanthanoid Inorganic materials 0.000 abstract 1
- 150000002602 lanthanoids Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To form an oxide ceramic superconducting material film on a substrate, by externally applying a magnetic field to a plasma generation chamber containing a substrate to be treated, supplying a group IIIa element, a group IIa element and copper together with oxygen in a state of vapor or fine particles to the generation chamber under irradiation with microwave and reacting the components in the plasma. CONSTITUTION:A plasma generation chamber 30 containing a substrate 10 is evacuated. O2 gas is introduced into the chamber 30 through a gas inlet 16 and, at the same time, microwave 30-2 is applied to the chamber with a microwave oscillator 14. A high-density plasma is generated in the space 31 by applying a magnetic field 30-1 with an electromagnet 15. Alkyl compounds, etc., of group IIIa lanthanoid element A, group IIa element B and Cu are dissolved in an organic solvent or water, introduced into the chamber together with O2 bubbling gas through an inlet 17 and made to react with each other with the plasma in the space 31 to form an oxide ceramic superconducting material film having a composition of formula (A1-XBX)YCuZOW (X is 0.1-1; Y is 2-4; Z is 1-4; W is 4-10) on the substrate 10.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62231887A JPS6476903A (en) | 1987-09-16 | 1987-09-16 | Apparatus for producing oxide superconducting material |
KR1019880011900A KR910007384B1 (en) | 1987-09-16 | 1988-09-15 | Formation of superconductor oxide film |
CN88107276A CN1016388B (en) | 1987-09-16 | 1988-09-16 | Method and device for forming superconducting oxide material |
EP88308627A EP0308266A3 (en) | 1987-09-16 | 1988-09-16 | Method and apparatus for forming superconducting materials |
US07/535,302 US5162296A (en) | 1987-09-16 | 1990-06-08 | Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field |
US07/882,525 US5262396A (en) | 1987-09-16 | 1992-05-13 | Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62231887A JPS6476903A (en) | 1987-09-16 | 1987-09-16 | Apparatus for producing oxide superconducting material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6476903A true JPS6476903A (en) | 1989-03-23 |
JPH0556283B2 JPH0556283B2 (en) | 1993-08-19 |
Family
ID=16930587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62231887A Granted JPS6476903A (en) | 1987-09-16 | 1987-09-16 | Apparatus for producing oxide superconducting material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6476903A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0288408A (en) * | 1988-05-31 | 1990-03-28 | Mitsubishi Metal Corp | Manufacturing method of superconducting ceramic membrane |
JP2017126607A (en) * | 2016-01-12 | 2017-07-20 | 株式会社リコー | Oxide semiconductor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4417015A1 (en) * | 1994-05-14 | 1995-11-16 | Maschimpex Gmbh | Sorting machine for sorting or classifying small products of the pharmaceutical and confectionery industries by shape and color |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56109824A (en) * | 1980-02-05 | 1981-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide superconductive thin film |
JPS5963732A (en) * | 1982-10-04 | 1984-04-11 | Hitachi Ltd | Thin film forming equipment |
JPS59219461A (en) * | 1983-05-24 | 1984-12-10 | Toshiba Corp | Amorphous silicon film forming device |
JPS60117711A (en) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | Forming apparatus of thin film |
JPS61109036A (en) * | 1984-11-01 | 1986-05-27 | Canon Inc | Display device of television lens |
JPS61125133A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Low temperature plasma electromagnetic field control structure |
JPS61267324A (en) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | Dry thin film processing equipment |
JPS62150726A (en) * | 1985-12-24 | 1987-07-04 | Fuji Electric Co Ltd | Manufacturing method of semiconductor device |
-
1987
- 1987-09-16 JP JP62231887A patent/JPS6476903A/en active Granted
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56109824A (en) * | 1980-02-05 | 1981-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide superconductive thin film |
JPS5963732A (en) * | 1982-10-04 | 1984-04-11 | Hitachi Ltd | Thin film forming equipment |
JPS59219461A (en) * | 1983-05-24 | 1984-12-10 | Toshiba Corp | Amorphous silicon film forming device |
JPS60117711A (en) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | Forming apparatus of thin film |
JPS61109036A (en) * | 1984-11-01 | 1986-05-27 | Canon Inc | Display device of television lens |
JPS61125133A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Low temperature plasma electromagnetic field control structure |
JPS61267324A (en) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | Dry thin film processing equipment |
JPS62150726A (en) * | 1985-12-24 | 1987-07-04 | Fuji Electric Co Ltd | Manufacturing method of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0288408A (en) * | 1988-05-31 | 1990-03-28 | Mitsubishi Metal Corp | Manufacturing method of superconducting ceramic membrane |
JP2017126607A (en) * | 2016-01-12 | 2017-07-20 | 株式会社リコー | Oxide semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPH0556283B2 (en) | 1993-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5453125A (en) | ECR plasma source for gas abatement | |
EP0413282A3 (en) | Method and apparatus for producing magnetically-coupled planar plasma | |
JPS6417870A (en) | Manufacture of carbon | |
KR890004407A (en) | Resist Mask Peeling Method | |
EP0327034A3 (en) | Process for the formation of a functional deposited film containing groups ii and vi atoms as the main constituent atoms by microwave plasma chemical vapor deposition process | |
JPS5518403A (en) | Formation of organic thin film | |
EP0402867A3 (en) | Apparatus for microwave processing in a magnetic field | |
JPS56105483A (en) | Dry etching device | |
JPS6476903A (en) | Apparatus for producing oxide superconducting material | |
JPS56155526A (en) | Method of forming film | |
JPS5766625A (en) | Manufacture of film | |
JPS56123377A (en) | Plasma cleaning and etching method | |
JPS5571006A (en) | Magnetic thin film and its manufacturing method | |
JPS56105480A (en) | Plasma etching method | |
JPS6473776A (en) | Formation of superconducting oxide film | |
JPS5756036A (en) | Plasma chemical vapor phase reactor | |
KR880006959A (en) | Micro-exciter CVD apparatus and method | |
DE3778794D1 (en) | METHOD AND DEVICE FOR FORMING A LAYER THROUGH PLASMA MECHANICAL PROCESS. | |
JPS5298475A (en) | Plasma treating apparatus | |
JPS53110378A (en) | Plasma carrying device | |
JPS6417867A (en) | Manufacture of carbon and boron nitride | |
JPS56166377A (en) | Plasma treating method of hollow body | |
JPS5587445A (en) | Manufacture of semiconductor device | |
JPS6473778A (en) | Formation of superconductive material of oxide | |
JPS5651578A (en) | Plasma etching method |