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JPS6473776A - Formation of superconducting oxide film - Google Patents

Formation of superconducting oxide film

Info

Publication number
JPS6473776A
JPS6473776A JP62231884A JP23188487A JPS6473776A JP S6473776 A JPS6473776 A JP S6473776A JP 62231884 A JP62231884 A JP 62231884A JP 23188487 A JP23188487 A JP 23188487A JP S6473776 A JPS6473776 A JP S6473776A
Authority
JP
Japan
Prior art keywords
magnetic field
single crystal
crystal structure
superconductive material
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62231884A
Other languages
Japanese (ja)
Other versions
JPH0817253B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62231884A priority Critical patent/JPH0817253B2/en
Priority to KR1019880011900A priority patent/KR910007384B1/en
Priority to CN88107276A priority patent/CN1016388B/en
Priority to EP88308627A priority patent/EP0308266A3/en
Publication of JPS6473776A publication Critical patent/JPS6473776A/en
Priority to US07/535,302 priority patent/US5162296A/en
Priority to US07/882,525 priority patent/US5262396A/en
Publication of JPH0817253B2 publication Critical patent/JPH0817253B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716—Passivating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

PURPOSE:To easily manufacture superconductive material of oxide having a single crystal structure of a large area by applying a plasma CVD processing under magnetic resonance due to the interaction of microwave energy and magnetic field. CONSTITUTION:A thin film forming substrate 10 is attached to a substrate holder 10' which is cooled through water cooling systems 27, 27' of a takeout rod 29 and the space including auxiliary space 12 is decompressed by a vacuum pump 26 or a rotary 24. Then oxidizing gas such as N2O or oxygen is introduced to a plasma generation chamber 31 through a gas cycle 16 and microwave and magnetic field are supplied by a microwave oscillator 14 and a magnet 15. Consequently, high density plasma which has hybrid resonance is generated by a magnetic field 30-1 perpendicular to a magnetic field 30-2 and the substrate 10 which cross at right angles each other, and thus ionized active oxygen is formed. Then organic solution of elements which constitute superconductive material whereto oxygen is bubbled through a bubbler 33 is introduced to a reaction system to control crystal orientation by the magnetic field 30-1 and an oxide superconducting film of a large single crystal structure is formed. An oxide superconductive material of a large area single crystal structure can be formed easily in this way.
JP62231884A 1987-09-16 1987-09-16 Method for forming oxide superconducting film Expired - Fee Related JPH0817253B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62231884A JPH0817253B2 (en) 1987-09-16 1987-09-16 Method for forming oxide superconducting film
KR1019880011900A KR910007384B1 (en) 1987-09-16 1988-09-15 Formation of superconductor oxide film
CN88107276A CN1016388B (en) 1987-09-16 1988-09-16 Method and device for forming superconducting oxide material
EP88308627A EP0308266A3 (en) 1987-09-16 1988-09-16 Method and apparatus for forming superconducting materials
US07/535,302 US5162296A (en) 1987-09-16 1990-06-08 Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field
US07/882,525 US5262396A (en) 1987-09-16 1992-05-13 Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231884A JPH0817253B2 (en) 1987-09-16 1987-09-16 Method for forming oxide superconducting film

Publications (2)

Publication Number Publication Date
JPS6473776A true JPS6473776A (en) 1989-03-20
JPH0817253B2 JPH0817253B2 (en) 1996-02-21

Family

ID=16930537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231884A Expired - Fee Related JPH0817253B2 (en) 1987-09-16 1987-09-16 Method for forming oxide superconducting film

Country Status (1)

Country Link
JP (1) JPH0817253B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288408A (en) * 1988-05-31 1990-03-28 Mitsubishi Metal Corp Manufacturing method of superconducting ceramic membrane
EP0412007A2 (en) * 1989-07-31 1991-02-06 Sumitomo Electric Industries, Ltd. Process for preparing superconducting thin films
WO1991003323A1 (en) * 1989-09-01 1991-03-21 Regents Of The University Of Minnesota Plasma deposition of superconducting thick films
US5527767A (en) * 1989-04-11 1996-06-18 Matsushita Electric Industrial Co., Ltd. Method for annealing thin film superconductors
US6110542A (en) * 1990-09-25 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming a film
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386687A (en) * 1977-01-10 1978-07-31 Sumitomo Electric Ind Ltd Preparation of nb3ge crystal
JPS56116869A (en) * 1980-02-18 1981-09-12 Shunpei Yamazaki Inductive reduced pressure gaseous phase method
JPS5797688A (en) * 1980-12-10 1982-06-17 Ibm Method of reacting surface
JPS5976488A (en) * 1982-10-26 1984-05-01 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of superconducting circuit device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386687A (en) * 1977-01-10 1978-07-31 Sumitomo Electric Ind Ltd Preparation of nb3ge crystal
JPS56116869A (en) * 1980-02-18 1981-09-12 Shunpei Yamazaki Inductive reduced pressure gaseous phase method
JPS5797688A (en) * 1980-12-10 1982-06-17 Ibm Method of reacting surface
JPS5976488A (en) * 1982-10-26 1984-05-01 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of superconducting circuit device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6423383B1 (en) 1987-04-27 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6838126B2 (en) 1987-04-27 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming I-carbon film
JPH0288408A (en) * 1988-05-31 1990-03-28 Mitsubishi Metal Corp Manufacturing method of superconducting ceramic membrane
US5527767A (en) * 1989-04-11 1996-06-18 Matsushita Electric Industrial Co., Ltd. Method for annealing thin film superconductors
EP0412007A2 (en) * 1989-07-31 1991-02-06 Sumitomo Electric Industries, Ltd. Process for preparing superconducting thin films
EP0412007A3 (en) * 1989-07-31 1991-04-10 Sumitomo Electric Industries, Ltd Process for preparing superconducting thin films
WO1991003323A1 (en) * 1989-09-01 1991-03-21 Regents Of The University Of Minnesota Plasma deposition of superconducting thick films
US6110542A (en) * 1990-09-25 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming a film
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
US7125588B2 (en) 1990-09-25 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Pulsed plasma CVD method for forming a film

Also Published As

Publication number Publication date
JPH0817253B2 (en) 1996-02-21

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