JPS6474745A - Embedding of groove - Google Patents
Embedding of grooveInfo
- Publication number
- JPS6474745A JPS6474745A JP23282387A JP23282387A JPS6474745A JP S6474745 A JPS6474745 A JP S6474745A JP 23282387 A JP23282387 A JP 23282387A JP 23282387 A JP23282387 A JP 23282387A JP S6474745 A JPS6474745 A JP S6474745A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- etching
- oxide film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 10
- 238000005530 etching Methods 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
Landscapes
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To inhibit the generation of a recess and a slit and to make possible a complete flattening by a method wherein, after a large taper is formed on an oxide film, which is an etching mask, an insulative thin film is deposited in a desired thickness and is made to remain only in the interior of a groove by anisotropic etching. CONSTITUTION:A first oxide film 2 is subjected to taper etching by a resist retreating method and a groove is anisotropically etched in an Si substrate 1 using the film 2 as a mask. Then, after a second oxide film 3 is deposited in a thickness of 1/3 or 1/2 of a pattern width by an LPCVD method, the film 3 is made to remain only in the interior of the groove by anisotropic etching. By using a film having an etching resistance higher than that of the film 2 as the film 3, the film 2 only is selectively removed. Thereby, a taper is formed on the aperture of the groove. Then, a third oxide film 4 is deposited by an LPCVD method and an embedding of the groove is finished by entire surface etching. At this time, a void is generated only in the interior of the groove and the generation of a recess and a slit does not occur.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23282387A JPS6474745A (en) | 1987-09-17 | 1987-09-17 | Embedding of groove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23282387A JPS6474745A (en) | 1987-09-17 | 1987-09-17 | Embedding of groove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6474745A true JPS6474745A (en) | 1989-03-20 |
Family
ID=16945338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23282387A Pending JPS6474745A (en) | 1987-09-17 | 1987-09-17 | Embedding of groove |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6474745A (en) |
-
1987
- 1987-09-17 JP JP23282387A patent/JPS6474745A/en active Pending
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