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JPS6474723A - Formation of flat resist film - Google Patents

Formation of flat resist film

Info

Publication number
JPS6474723A
JPS6474723A JP23282287A JP23282287A JPS6474723A JP S6474723 A JPS6474723 A JP S6474723A JP 23282287 A JP23282287 A JP 23282287A JP 23282287 A JP23282287 A JP 23282287A JP S6474723 A JPS6474723 A JP S6474723A
Authority
JP
Japan
Prior art keywords
film
resist
1mum
instance
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23282287A
Other languages
Japanese (ja)
Other versions
JPH06105675B2 (en
Inventor
Mikio Nishio
Tadanaka Yoneda
Ichiro Nakao
Shinichi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62232822A priority Critical patent/JPH06105675B2/en
Publication of JPS6474723A publication Critical patent/JPS6474723A/en
Publication of JPH06105675B2 publication Critical patent/JPH06105675B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To improve flatness for making uniform film thickness, by forming the first resist thin film on a substrate having an uneven pattern on one surface followed by removing the first resist thin film by etching back by a desired amount for forming the second resist thin film thereon. CONSTITUTION:A resist pattern 12 (for instance, film thickness of 1mum) is formed in the broad recessed part (for instance, a recessed part to become more than two mum wide) on a substrate 11, wherein an uneven pattern (for instance, to the depth of 1mum) in formed, by using mask exposure or the like in order to make the groove width of all recessed parts under the prescribed width (for instance, 1mum). Next, a resist film 13 (for instance, film width about 1mum) as the first resist thin film is formed. Then, all of the resist film on the raised part is removed by etching back. Further, a resist film 14 (for instance, film width about 1mum) as the second resist thin film is formed. Thereby, a recessed quanty of the resist film 14 on the groove part is also remarkably reduced (under 1mum) while hardly causing a change of film width due to the groove part density.
JP62232822A 1987-09-17 1987-09-17 Method of forming flat resist film Expired - Fee Related JPH06105675B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232822A JPH06105675B2 (en) 1987-09-17 1987-09-17 Method of forming flat resist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232822A JPH06105675B2 (en) 1987-09-17 1987-09-17 Method of forming flat resist film

Publications (2)

Publication Number Publication Date
JPS6474723A true JPS6474723A (en) 1989-03-20
JPH06105675B2 JPH06105675B2 (en) 1994-12-21

Family

ID=16945321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232822A Expired - Fee Related JPH06105675B2 (en) 1987-09-17 1987-09-17 Method of forming flat resist film

Country Status (1)

Country Link
JP (1) JPH06105675B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199629A (en) * 1990-12-21 1993-04-06 Rohm Co., Ltd. Wire bonding system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618946A (en) * 1984-06-25 1986-01-16 Toshiba Corp Manufacture of semiconductor device
JPS621232A (en) * 1985-06-26 1987-01-07 Matsushita Electronics Corp Flattening method for insulating film
JPS6233445A (en) * 1985-08-07 1987-02-13 Nec Corp Multilayer interconnection and production thereof
JPS6245032A (en) * 1985-08-22 1987-02-27 Nec Corp Manufacture of semiconductor device
JPS62111447A (en) * 1985-07-18 1987-05-22 Matsushita Electronics Corp Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618946A (en) * 1984-06-25 1986-01-16 Toshiba Corp Manufacture of semiconductor device
JPS621232A (en) * 1985-06-26 1987-01-07 Matsushita Electronics Corp Flattening method for insulating film
JPS62111447A (en) * 1985-07-18 1987-05-22 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6233445A (en) * 1985-08-07 1987-02-13 Nec Corp Multilayer interconnection and production thereof
JPS6245032A (en) * 1985-08-22 1987-02-27 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199629A (en) * 1990-12-21 1993-04-06 Rohm Co., Ltd. Wire bonding system

Also Published As

Publication number Publication date
JPH06105675B2 (en) 1994-12-21

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees