JPS6467984A - Superconducting device - Google Patents
Superconducting deviceInfo
- Publication number
- JPS6467984A JPS6467984A JP62223946A JP22394687A JPS6467984A JP S6467984 A JPS6467984 A JP S6467984A JP 62223946 A JP62223946 A JP 62223946A JP 22394687 A JP22394687 A JP 22394687A JP S6467984 A JPS6467984 A JP S6467984A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- ion implanting
- superconductor
- resistor
- superconducting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 5
- 239000012212 insulator Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002887 superconductor Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To provide a superconducting device which is fine, has high integration and can be laminated by uniformly depositing an oxide superconducting material on a semiconductor or insulator substrate, modifying a section except a section to be used as a superconductor as a resistor or an insulator, and simultaneously forming the superconductor, the resistor and the insulator. CONSTITUTION:An oxide series superconducting material 20 and an insulating layer 30 which is modified by ion implanting to the material are formed in the same plane on an insulator substrate 10. The material can be deposited by sputtering or the like. The layer 30 is formed by covering a conductor pattern with a resist and then ion implanting vanadium or oxygen or the like with the pattern as a mask. Similarly, an oxide series superconducting material 21 and an insulating layer 31 are formed thereon. Since the layers 20, 30 are formed by ion implanting, they can be formed in the same plane flatly, and easily laminated in case of laminating them.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62223946A JPS6467984A (en) | 1987-09-09 | 1987-09-09 | Superconducting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62223946A JPS6467984A (en) | 1987-09-09 | 1987-09-09 | Superconducting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6467984A true JPS6467984A (en) | 1989-03-14 |
Family
ID=16806177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62223946A Pending JPS6467984A (en) | 1987-09-09 | 1987-09-09 | Superconducting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6467984A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263767A (en) * | 1994-01-14 | 1995-10-13 | Trw Inc | Planer type high-temperature superconducting integrated circuit using ion implantation |
-
1987
- 1987-09-09 JP JP62223946A patent/JPS6467984A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263767A (en) * | 1994-01-14 | 1995-10-13 | Trw Inc | Planer type high-temperature superconducting integrated circuit using ion implantation |
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