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JPS6457767A - Josephson effect element - Google Patents

Josephson effect element

Info

Publication number
JPS6457767A
JPS6457767A JP62214466A JP21446687A JPS6457767A JP S6457767 A JPS6457767 A JP S6457767A JP 62214466 A JP62214466 A JP 62214466A JP 21446687 A JP21446687 A JP 21446687A JP S6457767 A JPS6457767 A JP S6457767A
Authority
JP
Japan
Prior art keywords
film
nitride
effect element
oxide
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62214466A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62214466A priority Critical patent/JPS6457767A/en
Publication of JPS6457767A publication Critical patent/JPS6457767A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To stably hold the characteristics of a Josephson effect element which employs a high temperature superconducting material by forming a surface protective film and a contact electrode of an oxide film or a nitride film. CONSTITUTION:A Josephson effect element is formed in a microbridge structure of a high temperature superconducting material film 2 made of YBaCUO, etc., on the surface of an insulating substrate 1 covered with oxide or nitride, such as quartz or a nitride film or an oxide film, a protective film 3 made of an SiO2 film or an Si3N4 film is formed by a plasma CVD method on the surface of the element after oxygen plasma processing, and a contact electrode 4 made of an ITO film or a TiN film is formed by a plasma CVD, etc., after oxygen plasma processing on a contact. Since it does not become, when oxygen radical is discharged from a material, superconducting or becomes impossible to electrically contact with the electrode, the formation of the protective film or the contact electrode due to the oxide film or the nitride film prevents the oxygen radical from discharging from the superconducting material to hold a superconduction.
JP62214466A 1987-08-28 1987-08-28 Josephson effect element Pending JPS6457767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62214466A JPS6457767A (en) 1987-08-28 1987-08-28 Josephson effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62214466A JPS6457767A (en) 1987-08-28 1987-08-28 Josephson effect element

Publications (1)

Publication Number Publication Date
JPS6457767A true JPS6457767A (en) 1989-03-06

Family

ID=16656188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62214466A Pending JPS6457767A (en) 1987-08-28 1987-08-28 Josephson effect element

Country Status (1)

Country Link
JP (1) JPS6457767A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01207981A (en) * 1988-02-16 1989-08-21 Nippon Sheet Glass Co Ltd Oxide superconductor device and manufacture thereof
JPH03223711A (en) * 1990-11-05 1991-10-02 Canon Inc Beam deflector
WO2005113856A1 (en) * 2004-05-20 2005-12-01 Dow Global Technologies Inc. Plasma enhanced chemical vapor deposition of metal oxide

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01207981A (en) * 1988-02-16 1989-08-21 Nippon Sheet Glass Co Ltd Oxide superconductor device and manufacture thereof
JPH03223711A (en) * 1990-11-05 1991-10-02 Canon Inc Beam deflector
WO2005113856A1 (en) * 2004-05-20 2005-12-01 Dow Global Technologies Inc. Plasma enhanced chemical vapor deposition of metal oxide

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