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JPS6456397A - Molecular beam source - Google Patents

Molecular beam source

Info

Publication number
JPS6456397A
JPS6456397A JP21274587A JP21274587A JPS6456397A JP S6456397 A JPS6456397 A JP S6456397A JP 21274587 A JP21274587 A JP 21274587A JP 21274587 A JP21274587 A JP 21274587A JP S6456397 A JPS6456397 A JP S6456397A
Authority
JP
Japan
Prior art keywords
molecular beam
beam source
plasma
gaseous
molecule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21274587A
Other languages
Japanese (ja)
Other versions
JP2741859B2 (en
Inventor
Shigeo Goshima
Tomoyoshi Mishima
Tomonori Tagami
Masahiko Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21274587A priority Critical patent/JP2741859B2/en
Publication of JPS6456397A publication Critical patent/JPS6456397A/en
Application granted granted Critical
Publication of JP2741859B2 publication Critical patent/JP2741859B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To eliminate the induction of desorption of a gas from a cell and to produce a III-V compd. semiconductor especially having excellent crystallinity by using a plasma stimulating means in the molecular beam source of a molecular-beam epitaxy device, etc. CONSTITUTION:The molecular beam source is provided with the means for plasma-stimulating the evaporated molecule of a solid molecular beam material or the molecule of a gaseous molecular beam material. In this molecular beam source, the evaporated molecule of the molecular beam material is transported by gaseous hydrogen when a solid molecular beam material is used, and the gaseous mixture of the hydrogen and evaporated molecule is plasma-stimulated by a high-frequency wave. When a gaseous molecular beam material such as AsH3 is used, the gas is directly plasma-stimulated. Since a cracking cell is not heated at high temp. in the molecular beam source, the desorption of the adsorbed gas from the inner cell wall is not caused.
JP21274587A 1987-08-28 1987-08-28 Molecular beam epitaxy Expired - Lifetime JP2741859B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21274587A JP2741859B2 (en) 1987-08-28 1987-08-28 Molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21274587A JP2741859B2 (en) 1987-08-28 1987-08-28 Molecular beam epitaxy

Publications (2)

Publication Number Publication Date
JPS6456397A true JPS6456397A (en) 1989-03-03
JP2741859B2 JP2741859B2 (en) 1998-04-22

Family

ID=16627721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21274587A Expired - Lifetime JP2741859B2 (en) 1987-08-28 1987-08-28 Molecular beam epitaxy

Country Status (1)

Country Link
JP (1) JP2741859B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990008210A2 (en) * 1989-01-13 1990-07-26 Hughes Aircraft Company Plasma/radiation assisted molecular beam epitaxy method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990008210A2 (en) * 1989-01-13 1990-07-26 Hughes Aircraft Company Plasma/radiation assisted molecular beam epitaxy method and apparatus
WO1990008210A3 (en) * 1989-01-13 1990-09-20 Hughes Aircraft Co Plasma/radiation assisted molecular beam epitaxy method and apparatus

Also Published As

Publication number Publication date
JP2741859B2 (en) 1998-04-22

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