[go: up one dir, main page]

JPS6451647A - Manufacture of trench type capacitor - Google Patents

Manufacture of trench type capacitor

Info

Publication number
JPS6451647A
JPS6451647A JP62208412A JP20841287A JPS6451647A JP S6451647 A JPS6451647 A JP S6451647A JP 62208412 A JP62208412 A JP 62208412A JP 20841287 A JP20841287 A JP 20841287A JP S6451647 A JPS6451647 A JP S6451647A
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
trench
silicon substrate
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62208412A
Other languages
Japanese (ja)
Inventor
Hirobumi Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62208412A priority Critical patent/JPS6451647A/en
Publication of JPS6451647A publication Critical patent/JPS6451647A/en
Pending legal-status Critical Current

Links

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make the thickness of an oxide film in the opening edge section of a trench thicker than that of other sections, and to inhibit a horn phenomenon by forming an opening section to an silicon oxide film on an silicon substrate, diffusing an impurity from the opening section and shaping the trench to the silicon substrate, using the silicon oxide film as a mask. CONSTITUTION:As<+> ions are implanted into an opening through an ion implantation method, employing an silicon oxide film 2 formed onto an silicon substrate 1 as a mask. An N-type diffusion layer 3 in high concentration is shaped through a diffusion for twenty min at 1000 deg.C in an N2 atmosphere. The silicon substrate exposed in the opening section is dry-etched, using the silicon oxide film 2 as a mask, thus forming a trench 4. The silicon oxide film 2 is removed, the surface of the silicon substrate 1 and the inwall of the trench 4 are oxidized, and an silicon oxide film 5 is grown. Since the N-type diffusion layer in high concentration is shaped in the upper edge section of the trench at that time, the silicon oxide film 5 is grown thickly, thus inhibiting a horn phenomenon.
JP62208412A 1987-08-22 1987-08-22 Manufacture of trench type capacitor Pending JPS6451647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208412A JPS6451647A (en) 1987-08-22 1987-08-22 Manufacture of trench type capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208412A JPS6451647A (en) 1987-08-22 1987-08-22 Manufacture of trench type capacitor

Publications (1)

Publication Number Publication Date
JPS6451647A true JPS6451647A (en) 1989-02-27

Family

ID=16555811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208412A Pending JPS6451647A (en) 1987-08-22 1987-08-22 Manufacture of trench type capacitor

Country Status (1)

Country Link
JP (1) JPS6451647A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6439215B1 (en) 2000-08-10 2002-08-27 Honda Giken Kogyo Kabushiki Kaisha Breather structure in four-cycle engine for work machines
JP2011211204A (en) * 2010-03-30 2011-10-20 Ibiden Co Ltd Electronic component and printed wiring board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6439215B1 (en) 2000-08-10 2002-08-27 Honda Giken Kogyo Kabushiki Kaisha Breather structure in four-cycle engine for work machines
JP2011211204A (en) * 2010-03-30 2011-10-20 Ibiden Co Ltd Electronic component and printed wiring board

Similar Documents

Publication Publication Date Title
JPS61237422A (en) Manufacturing method of semiconductor device
JPS6451647A (en) Manufacture of trench type capacitor
JPS56138920A (en) Method of selection and diffusion for impurities
JPS6455865A (en) Manufacture of semiconductor device
JPS61207076A (en) Manufacture of semiconductor device
JPH0228929A (en) Locos method utilizing dry etching of polycrystalline silicon
JPS55145373A (en) Fabricating method of semiconductor device
JPS63261879A (en) Manufacture of semiconductor device
JPS6430271A (en) Manufacture of insulated-gate semiconductor device
JPS5796524A (en) Manufacture of semiconductor device
JPS5893343A (en) Forming method for isolation region of semiconductor integrated circuit
JPS5615077A (en) Manufacture of semiconductor device
JPS55102269A (en) Method of fabricating semiconductor device
JPS5613772A (en) Preparation of semiconductor device
JPS6211504B2 (en)
JPS61240682A (en) Manufacture of semiconductor device
JPS6425479A (en) Manufacture of mos type semiconductor device
JPS57173956A (en) Manufacture of semiconductor device
JPS645067A (en) Manufacture of semiconductor device
JPS5458368A (en) Manufacture for semiconductor
JPS6427265A (en) Manufacture of semiconductor device
JPS6484662A (en) Manufacture of semiconductor device
JPS56130971A (en) Manufacture of mos type semiconductor device
JPS644068A (en) Manufacture of semiconductor device
JPS55102272A (en) Method of fabricating mos semiconductor device