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JPS6451125A - Exhaust treatment device - Google Patents

Exhaust treatment device

Info

Publication number
JPS6451125A
JPS6451125A JP62209849A JP20984987A JPS6451125A JP S6451125 A JPS6451125 A JP S6451125A JP 62209849 A JP62209849 A JP 62209849A JP 20984987 A JP20984987 A JP 20984987A JP S6451125 A JPS6451125 A JP S6451125A
Authority
JP
Japan
Prior art keywords
chemical
oven
arsine
gas
unreacted starting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62209849A
Other languages
Japanese (ja)
Inventor
Toshimitsu Omine
Yasuaki Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62209849A priority Critical patent/JPS6451125A/en
Priority to US07/222,905 priority patent/US4940213A/en
Priority to GB8818093A priority patent/GB2209005B/en
Publication of JPS6451125A publication Critical patent/JPS6451125A/en
Priority to GB9110393A priority patent/GB2243311B/en
Pending legal-status Critical Current

Links

Landscapes

  • Treating Waste Gases (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To collect unreacted starting gas efficiently by collecting solid by means of the first and the second collecting means after treatment of gas generated from a semiconductor gas phase growth device in a reaction oven, and then treating the same with a chemical or physical adsorbent. CONSTITUTION:Unreacted starting gas such as arsine generated from a reaction oven 1 to grow crystals on a semiconductor base is decomposed into, for example, As and H2 from an exhaust outlet 5 by a thermal decomposition oven 17. Then, the exhaust comes into a cyclone 19, and after a part of As is removed, comparatively large diameter As is removed by a membrane filter 2 and solidified As is removed by a display filter 23 respectively. Arsine is adsorbed and removed by a chemical trap 25. Thus, the durability of the chemical trap 25 is enhanced.
JP62209849A 1987-08-24 1987-08-24 Exhaust treatment device Pending JPS6451125A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62209849A JPS6451125A (en) 1987-08-24 1987-08-24 Exhaust treatment device
US07/222,905 US4940213A (en) 1987-08-24 1988-07-22 Exhaust processing apparatus
GB8818093A GB2209005B (en) 1987-08-24 1988-07-29 Exhaust processing apparatus
GB9110393A GB2243311B (en) 1987-08-24 1991-05-14 Exhaust processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62209849A JPS6451125A (en) 1987-08-24 1987-08-24 Exhaust treatment device

Publications (1)

Publication Number Publication Date
JPS6451125A true JPS6451125A (en) 1989-02-27

Family

ID=16579640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62209849A Pending JPS6451125A (en) 1987-08-24 1987-08-24 Exhaust treatment device

Country Status (1)

Country Link
JP (1) JPS6451125A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07222908A (en) * 1994-02-15 1995-08-22 Sadayoshi Taketsuna Exhaust gas filtering treatment method of semiconductor manufacturing process
GB2323312B (en) * 1997-03-21 2001-08-08 Korea M A T Co Ltd Gas scrubber and methods of disposing a gas using the same
JP2010510165A (en) * 2006-11-22 2010-04-02 エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ Reducing reactive gases from gallium nitride deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07222908A (en) * 1994-02-15 1995-08-22 Sadayoshi Taketsuna Exhaust gas filtering treatment method of semiconductor manufacturing process
GB2323312B (en) * 1997-03-21 2001-08-08 Korea M A T Co Ltd Gas scrubber and methods of disposing a gas using the same
JP2010510165A (en) * 2006-11-22 2010-04-02 エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ Reducing reactive gases from gallium nitride deposition

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