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JPS6450532A - Manufacture of silicon thin film - Google Patents

Manufacture of silicon thin film

Info

Publication number
JPS6450532A
JPS6450532A JP20751187A JP20751187A JPS6450532A JP S6450532 A JPS6450532 A JP S6450532A JP 20751187 A JP20751187 A JP 20751187A JP 20751187 A JP20751187 A JP 20751187A JP S6450532 A JPS6450532 A JP S6450532A
Authority
JP
Japan
Prior art keywords
region
thin film
silicon
silicon dioxide
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20751187A
Other languages
Japanese (ja)
Other versions
JP2701845B2 (en
Inventor
Kouichi Shinkai
Hitoshi Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Rika Co Ltd
Original Assignee
Tokai Rika Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Priority to JP62207511A priority Critical patent/JP2701845B2/en
Publication of JPS6450532A publication Critical patent/JPS6450532A/en
Application granted granted Critical
Publication of JP2701845B2 publication Critical patent/JP2701845B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a silicon thin film in which a strain gage having excellent characteristics can be formed, by forming a silicon dioxide region adjacent to a part in a silicon substrate where the thin film is to be formed, and selectively etching away the silicon dioxide region. CONSTITUTION:In order to form a thin film 8 integrally on a silicon substrate 4, a silicon dioxide region 7 is formed in a part of the silicon substrate 4 where the thin film 8 is to be formed. The thin film 8 is formed after the region 7 is selectively etched away, According to an embodiment, a p<+> region 2 is formed in a p-type silicon wafer 1 and an n-type epitaxial layer 3 is grown thereon. Then an oxide film 5 is formed all over the surface and a U-shaped aperture 5a is formed in a region corresponding to the p<+> region 2. A vertical p<+> region 6 is then formed so as to reach the p<+> region 2. The p<+> regions 2 and 6 are made porous by anodic treatment and oxidized to provide a porous silicon dioxide region 7. The silicon dioxide region 7 is selectively removed, and a cantilever 8 is integral ly formed in the silicon substrate 4.
JP62207511A 1987-08-21 1987-08-21 Manufacturing method of silicon thin film Expired - Lifetime JP2701845B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207511A JP2701845B2 (en) 1987-08-21 1987-08-21 Manufacturing method of silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207511A JP2701845B2 (en) 1987-08-21 1987-08-21 Manufacturing method of silicon thin film

Publications (2)

Publication Number Publication Date
JPS6450532A true JPS6450532A (en) 1989-02-27
JP2701845B2 JP2701845B2 (en) 1998-01-21

Family

ID=16540932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207511A Expired - Lifetime JP2701845B2 (en) 1987-08-21 1987-08-21 Manufacturing method of silicon thin film

Country Status (1)

Country Link
JP (1) JP2701845B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656512A (en) * 1991-06-12 1997-08-12 Harris Corporation Method of manufacturing a semiconductor accelerometer
US5834333A (en) * 1995-06-07 1998-11-10 Ssi Technologies, Inc. Transducer having a resonating silicon beam and method for forming same
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
US6380099B2 (en) 1998-01-14 2002-04-30 Canon Kabushiki Kaisha Porous region removing method and semiconductor substrate manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102988A (en) * 1972-04-07 1973-12-24
JPS6092671A (en) * 1983-10-27 1985-05-24 Toko Inc Manufacture of semiconductor accelerating senser
JPS6267880A (en) * 1985-09-20 1987-03-27 Nissan Motor Co Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102988A (en) * 1972-04-07 1973-12-24
JPS6092671A (en) * 1983-10-27 1985-05-24 Toko Inc Manufacture of semiconductor accelerating senser
JPS6267880A (en) * 1985-09-20 1987-03-27 Nissan Motor Co Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656512A (en) * 1991-06-12 1997-08-12 Harris Corporation Method of manufacturing a semiconductor accelerometer
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
US5834333A (en) * 1995-06-07 1998-11-10 Ssi Technologies, Inc. Transducer having a resonating silicon beam and method for forming same
US6118164A (en) * 1995-06-07 2000-09-12 Ssi Technologies, Inc. Transducer having a resonating silicon beam and method for forming same
US6380099B2 (en) 1998-01-14 2002-04-30 Canon Kabushiki Kaisha Porous region removing method and semiconductor substrate manufacturing method

Also Published As

Publication number Publication date
JP2701845B2 (en) 1998-01-21

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