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JPS6450408A - Manufacture of semiconductor single crystal layer - Google Patents

Manufacture of semiconductor single crystal layer

Info

Publication number
JPS6450408A
JPS6450408A JP20626687A JP20626687A JPS6450408A JP S6450408 A JPS6450408 A JP S6450408A JP 20626687 A JP20626687 A JP 20626687A JP 20626687 A JP20626687 A JP 20626687A JP S6450408 A JPS6450408 A JP S6450408A
Authority
JP
Japan
Prior art keywords
electron beam
sample
intensity distribution
region
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20626687A
Other languages
Japanese (ja)
Other versions
JPH0779081B2 (en
Inventor
Tomoyasu Inoue
Shigeru Kanbayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62206266A priority Critical patent/JPH0779081B2/en
Publication of JPS6450408A publication Critical patent/JPS6450408A/en
Publication of JPH0779081B2 publication Critical patent/JPH0779081B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To make it possible to form a uniform recrystallized layer on an insulating film, by using an electron beam, whose beam intensity distribution in the direction Y is asymmetrical and slant of the beam intensity distribution on the side of the previous beam scanning region is gentler than that on the side of the substrate beam scanning region. CONSTITUTION:A spot shaped electron beam having asymmetrical intensity distribution is deflected in the right and left directions at a high speed. The intensity distribution of a pseudo-linear electron beam is flat in a region within the swinging width of the high speed deflection of the spot shaped electron beam (between -a and a). At the outside of said region, the left side of the distribution in the Figure is gentle, and that on the right side is steep. Such a pseudo-linear electron beam is projected on the surface of a sample. The effect of the scanning of the (n-1)th beam remains on the surface of the sample. Then, the n-th beam is scanned on this sample. Then the connecting part scanned by both beams is smoothly fused and recrystallized. At the same time, the temperature gradient in the surface of the sample at this time can be made optimum. Thus, a semiconductor single crystal layer having excellent uniformity can be formed on an insulating film.
JP62206266A 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer Expired - Lifetime JPH0779081B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206266A JPH0779081B2 (en) 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206266A JPH0779081B2 (en) 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer

Publications (2)

Publication Number Publication Date
JPS6450408A true JPS6450408A (en) 1989-02-27
JPH0779081B2 JPH0779081B2 (en) 1995-08-23

Family

ID=16520482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206266A Expired - Lifetime JPH0779081B2 (en) 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer

Country Status (1)

Country Link
JP (1) JPH0779081B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19936450A1 (en) * 1998-08-03 2000-04-20 Yazaki Corp Structure for plugging together a plug connection
DE19815862C2 (en) * 1997-04-11 2001-07-12 Yazaki Corp Connector arrangement
DE10132560C2 (en) * 2000-07-07 2003-08-28 Yazaki Corp Connectors
EP1638175A2 (en) 2004-09-17 2006-03-22 Sumitomo Wiring Systems, Ltd. A connector and a connector assembly

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145718A (en) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol Manufacture of single crystal semiconductor layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145718A (en) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol Manufacture of single crystal semiconductor layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19815862C2 (en) * 1997-04-11 2001-07-12 Yazaki Corp Connector arrangement
DE19936450A1 (en) * 1998-08-03 2000-04-20 Yazaki Corp Structure for plugging together a plug connection
DE19936450C2 (en) * 1998-08-03 2001-09-27 Yazaki Corp Connector
DE10132560C2 (en) * 2000-07-07 2003-08-28 Yazaki Corp Connectors
EP1638175A2 (en) 2004-09-17 2006-03-22 Sumitomo Wiring Systems, Ltd. A connector and a connector assembly

Also Published As

Publication number Publication date
JPH0779081B2 (en) 1995-08-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term