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JPS5797620A - Improvement of crystallinity of semiconductor film - Google Patents

Improvement of crystallinity of semiconductor film

Info

Publication number
JPS5797620A
JPS5797620A JP17539580A JP17539580A JPS5797620A JP S5797620 A JPS5797620 A JP S5797620A JP 17539580 A JP17539580 A JP 17539580A JP 17539580 A JP17539580 A JP 17539580A JP S5797620 A JPS5797620 A JP S5797620A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor
laser beam
forming body
beam sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17539580A
Other languages
Japanese (ja)
Inventor
Kenichi Oki
Yasushi Okawa
Terunobu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17539580A priority Critical patent/JPS5797620A/en
Publication of JPS5797620A publication Critical patent/JPS5797620A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To make the crystallinity of a semiconductor thin film favorable by a method wherein crystallization of the semiconductor is promoted by heating the semiconductor film with laser beams generating from mutually facing laser beam sources. CONSTITUTION:An SiO2 film 2 is formed on a transparent insulating substrate 1, and the Si film 3 is formed moreover on the upper face thereof to form a large areal thin film semiconductor forming body 5, the laser beam sources are provided facing mutually in the vertical direction interposing the forming body between them, the thin film semiconductor forming body 5 and the laser beam sources facing mutually in the vertical direction are equipped transferrably relatively, and laser beams 6, 7 from the laser beam sources are irradiated toward the forming body 5. Contour lines in the thin film become nearly perpendicular to the substrate 1 as shown in dotted lines 8, flow of heat becomes in parallel with the substrate 1, and heat currents in eight directions become dominant. Accordingly the Si thin film 3 consisting of large crystal nuclei 10 can be obtained.
JP17539580A 1980-12-11 1980-12-11 Improvement of crystallinity of semiconductor film Pending JPS5797620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17539580A JPS5797620A (en) 1980-12-11 1980-12-11 Improvement of crystallinity of semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17539580A JPS5797620A (en) 1980-12-11 1980-12-11 Improvement of crystallinity of semiconductor film

Publications (1)

Publication Number Publication Date
JPS5797620A true JPS5797620A (en) 1982-06-17

Family

ID=15995336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17539580A Pending JPS5797620A (en) 1980-12-11 1980-12-11 Improvement of crystallinity of semiconductor film

Country Status (1)

Country Link
JP (1) JPS5797620A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205711A (en) * 1983-03-31 1984-11-21 Fujitsu Ltd Manufacturing method of semiconductor device
JPS60134413A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Manufacture of semiconductor device
US4536231A (en) * 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
US4737233A (en) * 1984-10-22 1988-04-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making semiconductor crystal films
JPS6466929A (en) * 1987-08-11 1989-03-13 Philips Nv Method of forming defect-free single crystal thin layer of semiconductor material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536231A (en) * 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
JPS59205711A (en) * 1983-03-31 1984-11-21 Fujitsu Ltd Manufacturing method of semiconductor device
JPS60134413A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Manufacture of semiconductor device
US4737233A (en) * 1984-10-22 1988-04-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making semiconductor crystal films
JPS6466929A (en) * 1987-08-11 1989-03-13 Philips Nv Method of forming defect-free single crystal thin layer of semiconductor material

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