JPS6449257A - Thin-film transistor - Google Patents
Thin-film transistorInfo
- Publication number
- JPS6449257A JPS6449257A JP20597787A JP20597787A JPS6449257A JP S6449257 A JPS6449257 A JP S6449257A JP 20597787 A JP20597787 A JP 20597787A JP 20597787 A JP20597787 A JP 20597787A JP S6449257 A JPS6449257 A JP S6449257A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- seed crystal
- film
- region
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To enhance the carrier mobility and to increase the operation speed of a transistor by a method wherein a semiconductor film to be used as a channel part is formed by a single-crystal silicon film which has been made monocrystalline by a crystal growth operation of a silicon thin film adjacent to a seed crystal region. CONSTITUTION:Polycrystalline silicon is scanned by using an Ar laser beam; it is melted and recrystallized; a region of a seed crystal 7 2mum square is obtained. The laser beam is scanned from the region of the seed crystal 7; a polycrystalline silicon thin film 11 is melted and recrystallized in its direction; a single-crystal silicon thin-film 10 is obtained by making use of the seed crystal 7 as a nucleus. Its surface is thermally oxidized; polycrystalline silicon is grown thereon. This is patterned and a gate electrode 5 is formed. By this setup, the carrier mobility can be enhanced; an operation speed of a transistor can thus be increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20597787A JPS6449257A (en) | 1987-08-19 | 1987-08-19 | Thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20597787A JPS6449257A (en) | 1987-08-19 | 1987-08-19 | Thin-film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6449257A true JPS6449257A (en) | 1989-02-23 |
Family
ID=16515850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20597787A Pending JPS6449257A (en) | 1987-08-19 | 1987-08-19 | Thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6449257A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
| KR100355938B1 (en) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device manufacturing method |
-
1987
- 1987-08-19 JP JP20597787A patent/JPS6449257A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5486708A (en) * | 1990-11-15 | 1996-01-23 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5572045A (en) * | 1990-11-15 | 1996-11-05 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
| US5728591A (en) * | 1990-11-15 | 1998-03-17 | Seiko Instruments Inc. | Process for manufacturing light valve device using semiconductive composite substrate |
| KR100355938B1 (en) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device manufacturing method |
| US6924506B2 (en) | 1993-05-26 | 2005-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having channel formation region comprising silicon and containing a group IV element |
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