JPS6448463A - Method of driving amorphous silicon thin film transistor - Google Patents
Method of driving amorphous silicon thin film transistorInfo
- Publication number
- JPS6448463A JPS6448463A JP62205707A JP20570787A JPS6448463A JP S6448463 A JPS6448463 A JP S6448463A JP 62205707 A JP62205707 A JP 62205707A JP 20570787 A JP20570787 A JP 20570787A JP S6448463 A JPS6448463 A JP S6448463A
- Authority
- JP
- Japan
- Prior art keywords
- state
- voltage
- amorphous silicon
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 2
- 229910008045 Si-Si Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910006411 Si—Si Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000001782 photodegradation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent degradation of characteristics of a transistor due to irradiation with light, by applying a large voltage across a source and a drain compared with the voltage which causes the area therebetween to be in an insulating state. CONSTITUTION:In a thin film transistor TFT, a n type amorphous silicon hydride (a -Si :H) 4 is so formed under both a source 1 and a drain 2 as to be in ohmic contact with a TFT active layer 6. And, a gate 3 is biased in the reverse direction with respect to ON state so that the transistor is turned into OFF state. Now, the reverse biase is so setted that the voltage thereof is large compared with the voltage which generally causes the area between the source and the drain to be in an OFF state. As a result, an Si-Si bond which was strained in ON state can be restored to the original state thereof. Even if the bond is broken, when the reverse biase is applied, the bonds which were broken can be again close nearly each other, thereby the probability of their being bonded is increased. Accordingly, the photodegradation of an amorphous silicon can be prevented effectively, and the TFT with large mobility of carrier can be still kept operated even under the condition of strong irradiation with light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62205707A JPS6448463A (en) | 1987-08-19 | 1987-08-19 | Method of driving amorphous silicon thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62205707A JPS6448463A (en) | 1987-08-19 | 1987-08-19 | Method of driving amorphous silicon thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6448463A true JPS6448463A (en) | 1989-02-22 |
Family
ID=16511368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62205707A Pending JPS6448463A (en) | 1987-08-19 | 1987-08-19 | Method of driving amorphous silicon thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6448463A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02285995A (en) * | 1989-04-25 | 1990-11-26 | Zexel Corp | Brushless motor controller |
| US5055899A (en) * | 1987-09-09 | 1991-10-08 | Casio Computer Co., Ltd. | Thin film transistor |
| US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
| US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
| US5327001A (en) * | 1987-09-09 | 1994-07-05 | Casio Computer Co., Ltd. | Thin film transistor array having single light shield layer over transistors and gate and drain lines |
| CN102270636A (en) * | 2010-06-04 | 2011-12-07 | 元太科技工业股份有限公司 | Thin film transistor array substrate and manufacturing method thereof |
-
1987
- 1987-08-19 JP JP62205707A patent/JPS6448463A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055899A (en) * | 1987-09-09 | 1991-10-08 | Casio Computer Co., Ltd. | Thin film transistor |
| US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
| US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
| US5327001A (en) * | 1987-09-09 | 1994-07-05 | Casio Computer Co., Ltd. | Thin film transistor array having single light shield layer over transistors and gate and drain lines |
| JPH02285995A (en) * | 1989-04-25 | 1990-11-26 | Zexel Corp | Brushless motor controller |
| CN102270636A (en) * | 2010-06-04 | 2011-12-07 | 元太科技工业股份有限公司 | Thin film transistor array substrate and manufacturing method thereof |
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