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JPS6446987A - Semiconductor position detector - Google Patents

Semiconductor position detector

Info

Publication number
JPS6446987A
JPS6446987A JP62203922A JP20392287A JPS6446987A JP S6446987 A JPS6446987 A JP S6446987A JP 62203922 A JP62203922 A JP 62203922A JP 20392287 A JP20392287 A JP 20392287A JP S6446987 A JPS6446987 A JP S6446987A
Authority
JP
Japan
Prior art keywords
pair
converting
change
semiconductor layers
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62203922A
Other languages
Japanese (ja)
Inventor
Chiyoharu Horiguchi
Akira Kurahashi
Hiroyuki Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP62203922A priority Critical patent/JPS6446987A/en
Publication of JPS6446987A publication Critical patent/JPS6446987A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent positional detecting error due to change in temperature, by forming a semiconductor layer and a pair of converting semiconductor layers having uniform resistivity on the same semiconductor substrate. CONSTITUTION:When electromagnetic waves or corpuscular rays are applied to a predetermined position of a semiconductor layer of a second conductivity type formed on a semiconductor substrate 11 of a first conductivity type, current flows therethrough. This current is divided at the incident position into a pair of flows directed to a pair of signal extracting electrodes 6 and 7 and further to a pair of converting semiconductor layers 2 and 3 corresponding to these electrodes. The divided current parts are converted into voltages by said pair of converting semiconductor layers 2 and 3, respectively, and extracted from the pair of signal extracting electrodes so that they are subjected to predetermined voltage processing. Since the semiconductor layer 8 and the pair of converting semiconductor layers 2, 3 are formed on the same semiconductor substrate 11, a result of the voltage processing is not varied according to change in temperature. Therefore, it is possible to eliminate positional detecting errors due to change in temperature.
JP62203922A 1987-08-17 1987-08-17 Semiconductor position detector Pending JPS6446987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203922A JPS6446987A (en) 1987-08-17 1987-08-17 Semiconductor position detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203922A JPS6446987A (en) 1987-08-17 1987-08-17 Semiconductor position detector

Publications (1)

Publication Number Publication Date
JPS6446987A true JPS6446987A (en) 1989-02-21

Family

ID=16481917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203922A Pending JPS6446987A (en) 1987-08-17 1987-08-17 Semiconductor position detector

Country Status (1)

Country Link
JP (1) JPS6446987A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6321430B1 (en) * 1998-12-04 2001-11-27 Axxess Technologies, Inc. Workpiece carrying system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154277A (en) * 1982-03-09 1983-09-13 Mitsubishi Electric Corp Infrared ray detection element
JPS59127883A (en) * 1983-01-12 1984-07-23 Matsushita Electronics Corp Photosensitive semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154277A (en) * 1982-03-09 1983-09-13 Mitsubishi Electric Corp Infrared ray detection element
JPS59127883A (en) * 1983-01-12 1984-07-23 Matsushita Electronics Corp Photosensitive semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6321430B1 (en) * 1998-12-04 2001-11-27 Axxess Technologies, Inc. Workpiece carrying system

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