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JPS6468961A - Resistance element for semiconductor integrated circuit device - Google Patents

Resistance element for semiconductor integrated circuit device

Info

Publication number
JPS6468961A
JPS6468961A JP62225671A JP22567187A JPS6468961A JP S6468961 A JPS6468961 A JP S6468961A JP 62225671 A JP62225671 A JP 62225671A JP 22567187 A JP22567187 A JP 22567187A JP S6468961 A JPS6468961 A JP S6468961A
Authority
JP
Japan
Prior art keywords
diffusion layer
well
becomes
type diffusion
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225671A
Other languages
Japanese (ja)
Inventor
Koji Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP62225671A priority Critical patent/JPS6468961A/en
Publication of JPS6468961A publication Critical patent/JPS6468961A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form the resistance value exactly same as the designed value by a method wherein a plurality of contacts having different potential are provided on the opposite conductivity type diffusion layer located adjacent to the diffusion layer which becomes the resistor of a silicon substrate, and the potential gradient corresponding to the potential gradient of the diffusion layer which becomes a resistor is formed. CONSTITUTION:An N<+> type diffusion region 8 to be used for a contact is formed on one end of the well 2 contacting to the diffusion layer 3 which becomes a resistor, and an N<+> type diffusion region 9 to be used for a contact is formed on the other end of the well 2. Contact holes 10a and 11a are provided on the insulating oxide film 4 covering the upper part of the N-well 2 at the positions of the N<+> type diffusion regions 8 and 9, and metal layers 10 and 11 are formed. The metal layer 10 is con nected to a power source Vcc, and the metal layer 11 is connected to the ground. Then, the potential difference between the diffusion layer 3 and the well 2 becomes uniform at each part. Also, resistance values R1 and R2 become equal as designed respectively when the pattern between contacts 5 and 7 and the pattern between contacts 6 and 7 are equal. As a result, the target voltage Vcc/2 as an output voltage Vo can be obtained in a highly precise manner.
JP62225671A 1987-09-09 1987-09-09 Resistance element for semiconductor integrated circuit device Pending JPS6468961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225671A JPS6468961A (en) 1987-09-09 1987-09-09 Resistance element for semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225671A JPS6468961A (en) 1987-09-09 1987-09-09 Resistance element for semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6468961A true JPS6468961A (en) 1989-03-15

Family

ID=16832958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225671A Pending JPS6468961A (en) 1987-09-09 1987-09-09 Resistance element for semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6468961A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1324307A2 (en) * 2001-12-20 2003-07-02 Philips Intellectual Property & Standards GmbH Circuit for the voltage supply of a liquid crystal display device
US7709899B2 (en) 2004-03-31 2010-05-04 Ricoh Company, Ltd. Semiconductor apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1324307A2 (en) * 2001-12-20 2003-07-02 Philips Intellectual Property & Standards GmbH Circuit for the voltage supply of a liquid crystal display device
JP2003263138A (en) * 2001-12-20 2003-09-19 Koninkl Philips Electronics Nv Voltage supply circuit of liquid crystal display device and method for calibrating the same
US7709899B2 (en) 2004-03-31 2010-05-04 Ricoh Company, Ltd. Semiconductor apparatus

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