JPS6444013A - Manufacture of silicon thin film - Google Patents
Manufacture of silicon thin filmInfo
- Publication number
- JPS6444013A JPS6444013A JP20146287A JP20146287A JPS6444013A JP S6444013 A JPS6444013 A JP S6444013A JP 20146287 A JP20146287 A JP 20146287A JP 20146287 A JP20146287 A JP 20146287A JP S6444013 A JPS6444013 A JP S6444013A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- tube
- supplying
- state
- dummy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a silicon thin film having low resistance with a good uniform ity at a high growth velocity by alternately repeating a state of supplying a dopant material and a state of supplying no material when forming a silicon single crystalline thin film, a polycrystalline thin film or an amorphous thin film by means of a vapor growth method. CONSTITUTION:A wafer 2 is set on a quartz glass boat 2 set in a reaction tube 1, and the wall face of the tube 1 is covered with a heater 4. Pressure regulating He, 10% SiH4 in He, 0.05% PH3 in He, dummy He are controlled at flow rates by a mass flow controller 5. Valves 6 and 7, 8 and 9 are operated in pairs in such a manner that, when one is opened, the other is closed. The supplying amounts of the 0.05% PH3 in the He and the dummy He are equal ized, both the gases are alternately introduced to the tube to introduce the 0.05% PH3 in the He gas in a pulsating state into the tube without varying the pressure in the tube. Thus, a film having a low resistance is formed with good uniformity at a high growing velocity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62201462A JP2742789B2 (en) | 1987-08-12 | 1987-08-12 | Silicon thin film manufacturing method and silicon thin film manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62201462A JP2742789B2 (en) | 1987-08-12 | 1987-08-12 | Silicon thin film manufacturing method and silicon thin film manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6444013A true JPS6444013A (en) | 1989-02-16 |
| JP2742789B2 JP2742789B2 (en) | 1998-04-22 |
Family
ID=16441491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62201462A Expired - Lifetime JP2742789B2 (en) | 1987-08-12 | 1987-08-12 | Silicon thin film manufacturing method and silicon thin film manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2742789B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6764552B1 (en) | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
| JP2011254063A (en) * | 2010-05-01 | 2011-12-15 | Tokyo Electron Ltd | Method for forming thin film and film formation apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680127A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Method of impurity doping to semiconductor |
| JPS6134928A (en) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | Growing process of element semiconductor single crystal thin film |
| JPS61102729A (en) * | 1984-10-26 | 1986-05-21 | Nec Corp | Vapor-phase epitaxial growth device |
-
1987
- 1987-08-12 JP JP62201462A patent/JP2742789B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680127A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Method of impurity doping to semiconductor |
| JPS6134928A (en) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | Growing process of element semiconductor single crystal thin film |
| JPS61102729A (en) * | 1984-10-26 | 1986-05-21 | Nec Corp | Vapor-phase epitaxial growth device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6764552B1 (en) | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
| JP2011254063A (en) * | 2010-05-01 | 2011-12-15 | Tokyo Electron Ltd | Method for forming thin film and film formation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2742789B2 (en) | 1998-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20080206 |