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JPS6432661A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS6432661A
JPS6432661A JP62189362A JP18936287A JPS6432661A JP S6432661 A JPS6432661 A JP S6432661A JP 62189362 A JP62189362 A JP 62189362A JP 18936287 A JP18936287 A JP 18936287A JP S6432661 A JPS6432661 A JP S6432661A
Authority
JP
Japan
Prior art keywords
lead frame
chips
section
heating
die bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62189362A
Other languages
Japanese (ja)
Inventor
Koji Miyamoto
Hitoshi Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62189362A priority Critical patent/JPS6432661A/en
Publication of JPS6432661A publication Critical patent/JPS6432661A/en
Pending legal-status Critical Current

Links

Classifications

    • H10W72/0711—
    • H10W72/015—
    • H10W72/075—
    • H10W72/07511—
    • H10W90/756—

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To connect a wire onto the surface of a lead frame without trouble by reducing an oxidizing section for the lead frame, to which a semiconductor element chip is fixed, from a die bonding device by a reducing furnace. CONSTITUTION:Chips 8 are arranged at specified positions on a lead frame 7 through a thermosetting bonding resin in a die bonding section 5. The lead frame 7, which is forwarded from the die bonding section 5 and at predetermined positions of which the chips 8 are disposed through the bonding resin, is heated in a heating furnace 6, and the bonding resin is cured by the heating and the chips 8 are fixed completely to the lead frame 7. When the lead frame 7 is introduced into a reducing furnace 3 and brought to the state of heating, O2 and H2 in the lead frame 7 are bonded, an oxidizing section on the surface is reduced, and an oxide film is removed.
JP62189362A 1987-07-28 1987-07-28 Semiconductor manufacturing equipment Pending JPS6432661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62189362A JPS6432661A (en) 1987-07-28 1987-07-28 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62189362A JPS6432661A (en) 1987-07-28 1987-07-28 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS6432661A true JPS6432661A (en) 1989-02-02

Family

ID=16240052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62189362A Pending JPS6432661A (en) 1987-07-28 1987-07-28 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS6432661A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330341A (en) * 1989-06-28 1991-02-08 Mitsubishi Electric Corp Method and apparatus for manufacturing semiconductor device
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330341A (en) * 1989-06-28 1991-02-08 Mitsubishi Electric Corp Method and apparatus for manufacturing semiconductor device
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US6271062B1 (en) 1994-07-27 2001-08-07 Sharp Kabushiki Kaisha Thin film semiconductor device including a semiconductor film with high field-effect mobility

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