JPS6420641A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6420641A JPS6420641A JP62177612A JP17761287A JPS6420641A JP S6420641 A JPS6420641 A JP S6420641A JP 62177612 A JP62177612 A JP 62177612A JP 17761287 A JP17761287 A JP 17761287A JP S6420641 A JPS6420641 A JP S6420641A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- oxide film
- oxide
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To stepwise form the shape of a pattern end, to improve the uniformity and the shape of the thickness of an Si oxide film and to prevent the stepwise disconnection of wirings by employing a photoresist film and the Si oxide film as the masking material of a polycrystalline Si film. CONSTITUTION:An Si oxide film or nitride film is formed as an insulating film 16 on a semiconductor substrate 11, and a polycrystalline Si film 12, an Si oxide film 13 and a photoresist pattern 14 are formed thereon. With the film 14 as a mask the films 13, 12 are etched by anisotropic plasma etching to etch the film 12 approx. 0.2mum. Then, with the film 14 as a mask the film 13 is etched from its side face, Thereafter, with the film 13 as a mask the remaining film 12 is removed by etching. Subsequently, the film 13 is removed, and an Si oxide film 17 is formed on the film 12. Then, a semiconductor device is formed through the following steps by a conventional method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177612A JPS6420641A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177612A JPS6420641A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6420641A true JPS6420641A (en) | 1989-01-24 |
Family
ID=16034050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62177612A Pending JPS6420641A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6420641A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013131569A (en) * | 2011-12-20 | 2013-07-04 | Toyota Motor Corp | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034065A (en) * | 1983-08-04 | 1985-02-21 | Nec Corp | Manufacturing method of MOS type semiconductor device |
| JPS61296740A (en) * | 1985-06-25 | 1986-12-27 | Nec Kansai Ltd | Semiconductor device |
-
1987
- 1987-07-15 JP JP62177612A patent/JPS6420641A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034065A (en) * | 1983-08-04 | 1985-02-21 | Nec Corp | Manufacturing method of MOS type semiconductor device |
| JPS61296740A (en) * | 1985-06-25 | 1986-12-27 | Nec Kansai Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013131569A (en) * | 2011-12-20 | 2013-07-04 | Toyota Motor Corp | Semiconductor device |
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