JPS6417437A - Bonding method for composite bonding wire - Google Patents
Bonding method for composite bonding wireInfo
- Publication number
- JPS6417437A JPS6417437A JP62173510A JP17351087A JPS6417437A JP S6417437 A JPS6417437 A JP S6417437A JP 62173510 A JP62173510 A JP 62173510A JP 17351087 A JP17351087 A JP 17351087A JP S6417437 A JPS6417437 A JP S6417437A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- core material
- area ratio
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title abstract 2
- 239000011162 core material Substances 0.000 abstract 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 229910001316 Ag alloy Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 150000003378 silver Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/45298—Fillers
- H01L2224/45299—Base material
- H01L2224/4539—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To reduce a cost of a wire and to perform stable bonding, by making an area ratio of an Ag core material become a specific value and controlling a concentration of oxygen around a ball to become lower as the area ratio of the Ag core material becomes larger. CONSTITUTION:A periphery of a core material 2 made of high-purity silver or silver alloy with specific element contained in this silver is coated with a coating material 3 of high-purity gold so as to form a composite bonding wire 1 for a semiconductor device, and this wire is bonded. Then the bonding wire, whose area ratio of the core material 2 on its cross-sectional plane is 50% to 95%, is used. When a concentration of oxygen around a ball formed at the time of bonding is in the range of 10000ppm to 200ppm, and as the area ratio of the core material 2 becomes larger, the concentration is controlled lower. Hence, a cost of wire is reduced and stable bonding can be performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62173510A JPS6417437A (en) | 1987-07-10 | 1987-07-10 | Bonding method for composite bonding wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62173510A JPS6417437A (en) | 1987-07-10 | 1987-07-10 | Bonding method for composite bonding wire |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417437A true JPS6417437A (en) | 1989-01-20 |
Family
ID=15961865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62173510A Pending JPS6417437A (en) | 1987-07-10 | 1987-07-10 | Bonding method for composite bonding wire |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417437A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005005598A (en) * | 2003-06-13 | 2005-01-06 | Fujitsu Ltd | Semiconductor device |
JPWO2021065036A1 (en) * | 2019-10-01 | 2021-04-08 |
-
1987
- 1987-07-10 JP JP62173510A patent/JPS6417437A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005005598A (en) * | 2003-06-13 | 2005-01-06 | Fujitsu Ltd | Semiconductor device |
JPWO2021065036A1 (en) * | 2019-10-01 | 2021-04-08 | ||
WO2021065036A1 (en) * | 2019-10-01 | 2021-04-08 | 田中電子工業株式会社 | Wire joining structure, bonding wire used in same, and semiconductor device |
KR20220047621A (en) * | 2019-10-01 | 2022-04-18 | 타나카 덴시 코오교오 카부시키가이샤 | Wire bonding structure and bonding wire and semiconductor device used therefor |
CN114502754A (en) * | 2019-10-01 | 2022-05-13 | 田中电子工业株式会社 | Wire bonding structure, bonding wire used therein, and semiconductor device |
CN114502754B (en) * | 2019-10-01 | 2023-11-17 | 田中电子工业株式会社 | Wire bonding structures and bonding wires and semiconductor devices used therein |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6417437A (en) | Bonding method for composite bonding wire | |
JPS5721830A (en) | Bonding wire for semiconductor element | |
JPS5757886A (en) | Heat resistant silver coated conductor | |
JPS6417436A (en) | Composite bonding wire | |
JPS5548494A (en) | Working method for gold solder | |
JPS5518956A (en) | Oxygen concentration detecting element | |
JPS5649534A (en) | Bonding wire for semiconductor device | |
EP0072273A3 (en) | Low temperature integrated circuit die attachment process | |
JPS6427237A (en) | Complex bonding wire | |
JPS5324268A (en) | Pro duction of semiconductor device and bonding wire for the same | |
JPS5660025A (en) | Bonding method for semiconductor element | |
FR2424086A1 (en) | Porous sintered precious metal prod. esp. for jewellery - contains sintered particles of platinum, gold and/or silver and can be impregnated with perfume | |
JPS6441280A (en) | Thin film electrode and its forming method | |
JPS5583843A (en) | Humidity sensor | |
JPS57192037A (en) | Semiconductor device | |
JPS5752590A (en) | Au alloy brazing filler metal of low melting point | |
JPS56115544A (en) | Gold wire for bonding semiconductor element and semiconductor element | |
JPS5477571A (en) | Nail head bonding method | |
JPS53136960A (en) | Manufacture of stem | |
JPS5635764A (en) | Silver-colored vapor deposited body | |
JPS6412560A (en) | Semiconductor device | |
JPS56136962A (en) | One-side internal oxidation of internally oxidizable silver alloy for electrical contact material | |
JPS6462478A (en) | External parts for timepiece | |
JPS5364468A (en) | Silver wire connecting method | |
JPS5772337A (en) | Semiconductor device |