JPS6415983A - Thin film transistor - Google Patents

Abstract

PURPOSE:To obtain a TFT wherein effective and uniform H2 treatment of an active layer is enabled without necessitating other process, and high mobility and high speed driving are possible, by a method wherein the active layer on an insulating layer is formed by diffusing hydrogen in the insulating layer by heating at the time of forming a transistor. CONSTITUTION:On a substrate 1, the following are laminated in order; an insulating layer 2 containing H, an active layer 3, a gate oxide film 4 and a gate electrode 5. Then an interlayer insulating film 6 is stacked, and a metal wiring 7 is arranged to constitute a TFT. For the insulator layer 2 containing H, Si system insulator such as Si:N:H, SiC:H, SiN:H Si:O:H, etc., is used. Besides the above one, Al2O3 or B2O3 system insulator containing H or H atom as OH radical is preferably used. At the time of high temperature heating in the process of, e.g., forming the active layer 3, forming the gate oxide film 4, forming the gate electrode 5, etc., H in the insulator layer 2 containing H diffuses into the active layer 3, and passivate the active layer.