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JPS6411403A - Plasma generation reacting device - Google Patents

Plasma generation reacting device

Info

Publication number
JPS6411403A
JPS6411403A JP62166677A JP16667787A JPS6411403A JP S6411403 A JPS6411403 A JP S6411403A JP 62166677 A JP62166677 A JP 62166677A JP 16667787 A JP16667787 A JP 16667787A JP S6411403 A JPS6411403 A JP S6411403A
Authority
JP
Japan
Prior art keywords
resonator
applicator
substrate
input ports
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62166677A
Other languages
Japanese (ja)
Other versions
JP2552140B2 (en
Inventor
Fumio Takamura
Kohei Otake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Priority to JP62166677A priority Critical patent/JP2552140B2/en
Publication of JPS6411403A publication Critical patent/JPS6411403A/en
Application granted granted Critical
Publication of JP2552140B2 publication Critical patent/JP2552140B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

PURPOSE:To expand a plasma area formed in a resonator and to uniformly form a thin film on the surface of a substrate over a wide range by using a cavity resonator which has plural radio wave input ports by connected electrically to a radio wave system as an applicator. CONSTITUTION:A microwave oscillated by a single microwave oscillator 31 is passed through an isolator 32 and divided by a T-shaped branch pipe 33 into two, which are supplied to microwave input ports 34a and 34b of the applicator 34. Then a cylindrical resonator, for example, is used as the applicator 34. The resonator 60 forms the cavity resonator which has the microwave input ports 34a and 34b facing a cylindrical conductor 61 axially, quartz plates 63a and 63b as partition plates for holding a vacuum, a holding base 64 for the substrate 48, etc. Then the resonator 60 resonates in TE113 mode to form the plasma area covering the surface of the substrate 48. Thus, the cylindrical resonator 60 is used as the applicator to form a uniform film, crystal, etc., on the surface of the substrate 48 over a wide range, and plasma polymerization, plasma processing, etc., which are not affected by the attribute of a sample are performed.
JP62166677A 1987-07-03 1987-07-03 Plasma generation reactor Expired - Lifetime JP2552140B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166677A JP2552140B2 (en) 1987-07-03 1987-07-03 Plasma generation reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166677A JP2552140B2 (en) 1987-07-03 1987-07-03 Plasma generation reactor

Publications (2)

Publication Number Publication Date
JPS6411403A true JPS6411403A (en) 1989-01-17
JP2552140B2 JP2552140B2 (en) 1996-11-06

Family

ID=15835676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166677A Expired - Lifetime JP2552140B2 (en) 1987-07-03 1987-07-03 Plasma generation reactor

Country Status (1)

Country Link
JP (1) JP2552140B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178683A (en) * 1990-03-30 1993-01-12 New Japan Radio Co., Ltd. Microwave plasma cvd apparatus
WO1996003019A1 (en) * 1994-07-14 1996-02-01 Sumitomo Metal Industries, Ltd. Plasma processing device
US5522343A (en) * 1988-09-14 1996-06-04 Fujitsu Limited Thin film formation apparatus
WO2004068917A1 (en) * 2003-01-27 2004-08-12 Tokyo Electron Limited Plasma processor and plasma processing method
JP2006286269A (en) * 2005-03-31 2006-10-19 Tokyo Electron Ltd Plasma processing device
JP2007200687A (en) * 2006-01-26 2007-08-09 Toppan Printing Co Ltd Plasma treatment device having bifurcated waveguide
CN101853768A (en) * 2010-04-09 2010-10-06 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
CN114845455A (en) * 2022-05-07 2022-08-02 季华实验室 Microwave plasma chemical vapor deposition device and system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148797U (en) * 1981-03-13 1982-09-18
JPS6187869A (en) * 1984-10-05 1986-05-06 Hitachi Ltd sputtering device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148797U (en) * 1981-03-13 1982-09-18
JPS6187869A (en) * 1984-10-05 1986-05-06 Hitachi Ltd sputtering device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522343A (en) * 1988-09-14 1996-06-04 Fujitsu Limited Thin film formation apparatus
US5741364A (en) * 1988-09-14 1998-04-21 Fujitsu Limited Thin film formation apparatus
US5178683A (en) * 1990-03-30 1993-01-12 New Japan Radio Co., Ltd. Microwave plasma cvd apparatus
WO1996003019A1 (en) * 1994-07-14 1996-02-01 Sumitomo Metal Industries, Ltd. Plasma processing device
WO2004068917A1 (en) * 2003-01-27 2004-08-12 Tokyo Electron Limited Plasma processor and plasma processing method
JP2006286269A (en) * 2005-03-31 2006-10-19 Tokyo Electron Ltd Plasma processing device
JP2007200687A (en) * 2006-01-26 2007-08-09 Toppan Printing Co Ltd Plasma treatment device having bifurcated waveguide
CN101853768A (en) * 2010-04-09 2010-10-06 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
WO2011124074A1 (en) * 2010-04-09 2011-10-13 长飞光纤光缆有限公司 Cylindrical plasma resonant cavity
CN114845455A (en) * 2022-05-07 2022-08-02 季华实验室 Microwave plasma chemical vapor deposition device and system

Also Published As

Publication number Publication date
JP2552140B2 (en) 1996-11-06

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