JPS6411349A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6411349A JPS6411349A JP62167334A JP16733487A JPS6411349A JP S6411349 A JPS6411349 A JP S6411349A JP 62167334 A JP62167334 A JP 62167334A JP 16733487 A JP16733487 A JP 16733487A JP S6411349 A JPS6411349 A JP S6411349A
- Authority
- JP
- Japan
- Prior art keywords
- interconnection
- axis
- connection
- junction
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To make connection between a substrate and a conductive layer have low contact resistance as well as high critical current density by forming the above connection which is formed through intervening an insulating layer so that its connection is performed at a conductive part of its connection by a surface wherein a substrate layer or a semiconductor layer is formed and also by a junction surface which is not parallel to the above surface at least. CONSTITUTION:The first and second interconnection films 3 and 6 are formed by using superconductive conductors composed of, for example, La-Sr-Cu-O system materials and a part of the second interconnection film 6 is embedded in a contact hole 5 to form an electrode 7 and junction is made between the electrode 7 and the first interconnection film 3. In a normal conductive state, electric resistance to the direction of an axis c is higher than that of each direction in the axes a and b. The first and second interconnection films 3 and 6 or either of the above films shall be a single crystal interconnection composed of the superconductive conductors having electrical, magnetic anisotropy and perform a crystal growth so that an X direction falls to the axis a. As a junction part connecting with the upper surface of the interconnection film 3 is perpendicular to the axis c, electric resistance in this direction is high but the junction part connecting with the side of the interconnection film 3 allows a current to flow in the direction along the axis a. Then contact resistance can be decreased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62167334A JPS6411349A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62167334A JPS6411349A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411349A true JPS6411349A (en) | 1989-01-13 |
Family
ID=15847807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62167334A Pending JPS6411349A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411349A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437052A (en) * | 1987-07-31 | 1989-02-07 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| US5856275A (en) * | 1990-11-01 | 1999-01-05 | Sumitomo Electric Industries, Ltd. | Superconducting wiring lines and process for fabricating the same |
-
1987
- 1987-07-03 JP JP62167334A patent/JPS6411349A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437052A (en) * | 1987-07-31 | 1989-02-07 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| US5856275A (en) * | 1990-11-01 | 1999-01-05 | Sumitomo Electric Industries, Ltd. | Superconducting wiring lines and process for fabricating the same |
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