JPS6390833U - - Google Patents
Info
- Publication number
- JPS6390833U JPS6390833U JP18711086U JP18711086U JPS6390833U JP S6390833 U JPS6390833 U JP S6390833U JP 18711086 U JP18711086 U JP 18711086U JP 18711086 U JP18711086 U JP 18711086U JP S6390833 U JPS6390833 U JP S6390833U
- Authority
- JP
- Japan
- Prior art keywords
- belt
- gas supply
- semiconductor wafer
- supply head
- reciprocating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 230000032258 transport Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Description
第１図は本考案にかかる第１の実施例の概略図
、第２図は本考案にかかる第２の実施例の概略図
である。第３図は従来の連続式常圧ＣＶＤ装置の
一部断面正面図、第４図は第３図のＡ―Ａ線断面
図、第５図は深さ方向のエツチングレート特性図
、第６図はレジストパターンによるＣＶＤ膜のエ
ツチング孔の断面図、第７図はアルミニウムを蒸
着したときの断面図である。
１…ベルト（キヤタピラーベルト）、５…ガス
供給ヘツド、１２…半導体ウエーハ、１８…往復
運動させる機構（クランク機構）、１９，２０，
２１…往復運動させる機構、１９…（第３のプー
リ）、２０…（モータ）、２１…（制御回路）。
FIG. 1 is a schematic diagram of a first embodiment of the present invention, and FIG. 2 is a schematic diagram of a second embodiment of the present invention. Fig. 3 is a partial cross-sectional front view of a conventional continuous atmospheric CVD apparatus, Fig. 4 is a cross-sectional view taken along the line A--A in Fig. 3, Fig. 5 is an etching rate characteristic diagram in the depth direction, and Fig. 6 7 is a cross-sectional view of an etched hole in a CVD film formed by a resist pattern, and FIG. 7 is a cross-sectional view when aluminum is deposited. DESCRIPTION OF SYMBOLS 1...Belt (catapillar belt), 5...Gas supply head, 12...Semiconductor wafer, 18...Reciprocating mechanism (crank mechanism), 19, 20,
21... Mechanism for reciprocating motion, 19... (third pulley), 20... (motor), 21... (control circuit).
Claims (1)
送され加熱された状態にある半導体ウエーハ上に
所望のガスを吹き付けるガス供給ヘツドを有する
装置において、 上記半導体ウエーハを搬送するベルトと上記ガ
ス供給ヘツドとを相対的に短周期かつ短振幅で往
復動させる機構を具備したことを特徴とする半導
体製造装置。[Claims for Utility Model Registration] An apparatus having a gas supply head that sprays a desired gas onto a semiconductor wafer placed on a susceptor fixed to a belt, transported and heated, which transports the semiconductor wafer. A semiconductor manufacturing apparatus comprising a mechanism for reciprocating the belt and the gas supply head in a relatively short cycle and short amplitude.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18711086U JPS6390833U (en) | 1986-12-03 | 1986-12-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18711086U JPS6390833U (en) | 1986-12-03 | 1986-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6390833U true JPS6390833U (en) | 1988-06-13 |
Family
ID=31137281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18711086U Pending JPS6390833U (en) | 1986-12-03 | 1986-12-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6390833U (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
-
1986
- 1986-12-03 JP JP18711086U patent/JPS6390833U/ja active Pending
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501344B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7465666B2 (en) | 2000-06-28 | 2008-12-16 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7235486B2 (en) | 2000-06-28 | 2007-06-26 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7115494B2 (en) | 2000-06-28 | 2006-10-03 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7094680B2 (en) | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US9587310B2 (en) | 2001-03-02 | 2017-03-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7494908B2 (en) | 2001-09-26 | 2009-02-24 | Applied Materials, Inc. | Apparatus for integration of barrier layer and seed layer |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7429516B2 (en) | 2002-02-26 | 2008-09-30 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |