JPS6373546A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS6373546A JPS6373546A JP21746586A JP21746586A JPS6373546A JP S6373546 A JPS6373546 A JP S6373546A JP 21746586 A JP21746586 A JP 21746586A JP 21746586 A JP21746586 A JP 21746586A JP S6373546 A JPS6373546 A JP S6373546A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- internal electrode
- electrode terminals
- thickness
- sections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 9
- 238000000465 moulding Methods 0.000 abstract 2
- 238000004904 shortening Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、微細な内部電極端子（インナーリード）部の
形成を可能にするリードフレームに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a lead frame that enables the formation of fine internal electrode terminal (inner lead) portions.
従来の技術
従来の樹脂封止型半導体装置用のリードフレームは、均
一な厚みの材料を用いて形成されるため、成形樹脂内に
位置させる内部電極端子および基板支持体（グイパッド
）、成形樹脂の外部に位置させる外部電極端子（アウタ
ーリード）および枠体等すべての部分で厚さく材厚と記
す）が同じであった。BACKGROUND OF THE INVENTION Conventional lead frames for resin-sealed semiconductor devices are formed using materials with uniform thickness. All parts, such as the external electrode terminal (outer lead) located outside and the frame body, had the same thickness (denoted as material thickness).
ところで、リードフレーム形成工法としては打ち抜きプ
レス加工あるいはエツチング加工が一般的であるが、い
ずれの方法においても、最小抜き幅および最小残し幅は
その材厚に大きく依存する。すなわち、最小抜き幅や最
小残し幅の限界は材厚と同じ寸法となる。このため、第
３図に示した樹脂封止型半導体装置の断面図か゛ら明ら
かなように、内部電極端子１と半導体素子２を取り付け
るグイパッド３の最小間隔ｔｏは、リードフレームの材
厚ｔｏと等しくなる。なお、４は外部電極端子、５は半
導体素子上のポンディングパッドと内部電極端子１とを
電気的に接続する金などの金属細線、６は成形樹脂であ
る。Incidentally, punching press working or etching is commonly used as a lead frame forming method, but in either method, the minimum punching width and minimum remaining width largely depend on the thickness of the material. In other words, the limits of the minimum punching width and minimum remaining width are the same dimensions as the material thickness. Therefore, as is clear from the cross-sectional view of the resin-sealed semiconductor device shown in FIG. Become. Note that 4 is an external electrode terminal, 5 is a thin metal wire such as gold that electrically connects the bonding pad on the semiconductor element and the internal electrode terminal 1, and 6 is a molded resin.
発明が解決しようとする問題点
従来のリードフレームでは、最小加工寸法の制約によっ
て内部電極端子とグイパッドひいては半導体素子との間
隔を十分に挟めることができない。このため、金（Ａｕ
）等の高価な金属細線による接続距離が長くなりコスト
が高くなること、金属細線が長いため封止の際の樹脂注
入時に変形し、隣りの金属細線や半導体素子の角と短絡
しやすいこと等の不都合があった。Problems to be Solved by the Invention In conventional lead frames, it is not possible to provide a sufficient distance between the internal electrode terminals and the guide pads, and hence the semiconductor element due to restrictions on minimum processing dimensions. For this reason, gold (Au
) etc., which increases the cost due to the long connection distance, and the long metal wires that deform when resin is injected during sealing, making it easy to short-circuit with adjacent thin metal wires or corners of semiconductor elements, etc. There were some inconveniences.
さらに、隣り合う電極端子の間隔が大きくなって、電極
端子数が多いタイプのリードフレームを形成することが
できない不都合もあった。Furthermore, there is also the problem that the distance between adjacent electrode terminals becomes large, making it impossible to form a lead frame with a large number of electrode terminals.
問題点を解決するための手段
本発明のリードフレームは、成形樹脂の内部に位置させ
るリードフレーム部の厚さを、成形樹脂の外部に位置さ
せる他のリードフレーム部分の厚さより薄く設定したも
のである。Means for Solving the Problems In the lead frame of the present invention, the thickness of the lead frame portion located inside the molded resin is set to be thinner than the thickness of the other lead frame portion located outside the molded resin. be.
作用
内部電極端子部の厚さが、他の部分より薄くなっている
ため、薄（なった分だけ最小抜き幅、最小残し幅を小さ
くでき、内部電極端子部で微細な加工が可能となり、内
部電極端子とダイパッドを十分に近づけることができる
。Since the thickness of the working internal electrode terminal part is thinner than other parts, the minimum extraction width and minimum remaining width can be reduced by the thinner part. The electrode terminal and the die pad can be brought sufficiently close together.
さらに、外部電極端子等の機械的強度が必要な部分では
十分に厚い材厚が確保されている。Furthermore, a sufficiently thick material is ensured in parts where mechanical strength is required, such as external electrode terminals.
実施例
本発明のリードフレームの実施例を第１図と第２図を参
照して説明する。Embodiment An embodiment of the lead frame of the present invention will be described with reference to FIGS. 1 and 2.
第１図は本発明のリードフレームの斜視図であって、微
細加工が必要な内部電極端子１やダイパッド３の部分の
材厚が、外部電極端子４や枠体７等の他の部分の材厚よ
り薄い構造を示している。FIG. 1 is a perspective view of the lead frame of the present invention, showing that the material thickness of the internal electrode terminals 1 and die pad 3 that require microfabrication is different from that of other parts such as the external electrode terminals 4 and the frame 7. It shows a structure that is thinner than thick.
この構造のリードフレームを形成する方法は、原材料を
圧延するとき、圧延ローラーの圧力を変えて厚さの興な
る異形同条材を作る工法により、内部電極端子１および
ダイパッド３に位置する領域の厚さが、周囲の厚さの１
１５〜３１５の厚さとされた金属板を作り、この金属板
をプレス打ち抜き加工あるいはエツチング加工により材
厚の薄い領域で微細なパターンを形成するやり方である
。The method for forming a lead frame with this structure is to create irregularly shaped and uniform strips of varying thickness by changing the pressure of the rolling roller when rolling raw materials. The thickness is 1 of the surrounding thickness
In this method, a metal plate having a thickness of 15 to 315 mm is made, and a fine pattern is formed in the thin area of the metal plate by press punching or etching.
第２図に本発明のリードフレームを用いた半導体装置の
断面図を示す。内部電極端子部１の材厚ｔ１が、薄（な
っているため微細加工により内部電極端子１からダイパ
ッド３までの距離ｅ、をｔｌまで短かくすることができ
る。このため、半導体素子２と内部電極端子１間の距離
が短かくなり、金属細線５を短か（することができる。FIG. 2 shows a cross-sectional view of a semiconductor device using the lead frame of the present invention. Since the material thickness t1 of the internal electrode terminal portion 1 is thin, the distance e from the internal electrode terminal 1 to the die pad 3 can be shortened to tl by microfabrication. The distance between the electrode terminals 1 is shortened, and the thin metal wire 5 can be shortened.
発明の効果
本発明のリードフレームによれば、内部電極端子とダイ
パッドひいては半導体素子の間隔を挟めることができる
ため、金属細線を短かくすることができる。このため、
貴金属の金属細線のコストを５〜２５％低減できること
、樹脂注入時の金属細線の変形を抑えることができ、短
絡事故を無くして歩留を向上させること等の効果が奏さ
れる。Effects of the Invention According to the lead frame of the present invention, the distance between the internal electrode terminal and the die pad, and hence the semiconductor element can be increased, so that the thin metal wire can be shortened. For this reason,
Effects include being able to reduce the cost of fine metal wires made of noble metals by 5 to 25%, suppressing deformation of thin metal wires during resin injection, eliminating short-circuit accidents, and improving yield.
さらに、電極端子数の多いリードフレームを作ることが
できる効果もある。Furthermore, there is an effect that a lead frame with a large number of electrode terminals can be manufactured.
第１図は本発明のリードフレームの斜視図、第２図は本
発明のリードフレームを用いた半導体装置の断面図、第
３図は従来のリードフレームを用いた半導体装置の断面
図である。
１・・・・・・内部電極端子（インナーリード）、２・
・・・・・半導体素子、３・・・・・・ダイパッド、４
・・・・・・外部電極端子（アウターリード）、５・・
・・・・金属細線、６・・・・・・成形樹脂、７・・・
・・・枠体。
代理人の氏名 弁理士 中尾敏男 ほか１名第１図
グイハード
第２図
第３図FIG. 1 is a perspective view of a lead frame of the present invention, FIG. 2 is a cross-sectional view of a semiconductor device using the lead frame of the present invention, and FIG. 3 is a cross-sectional view of a semiconductor device using a conventional lead frame. 1... Internal electrode terminal (inner lead), 2...
... Semiconductor element, 3 ... Die pad, 4
...External electrode terminal (outer lead), 5...
...Fine metal wire, 6... Molded resin, 7...
...frame body. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 Guihard Figure 2 Figure 3
Claims (1)
、成形樹脂の外部に位置させる他のリードフレーム部分
の厚さより薄く設定したことを特徴とするリードフレー
ム。A lead frame characterized in that the thickness of the lead frame portion located inside the molded resin is set to be thinner than the thickness of other lead frame portions located outside the molded resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21746586A JPS6373546A (en) | 1986-09-16 | 1986-09-16 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21746586A JPS6373546A (en) | 1986-09-16 | 1986-09-16 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6373546A true JPS6373546A (en) | 1988-04-04 |
Family
ID=16704656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21746586A Pending JPS6373546A (en) | 1986-09-16 | 1986-09-16 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373546A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162894A (en) * | 1988-05-24 | 1992-11-10 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit having a dummy lead and shaped inner leads |
| EP0534678A2 (en) * | 1991-09-25 | 1993-03-31 | AT&T Corp. | Method of making electronic component packages |
-
1986
- 1986-09-16 JP JP21746586A patent/JPS6373546A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162894A (en) * | 1988-05-24 | 1992-11-10 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit having a dummy lead and shaped inner leads |
| EP0534678A2 (en) * | 1991-09-25 | 1993-03-31 | AT&T Corp. | Method of making electronic component packages |
| EP0534678A3 (en) * | 1991-09-25 | 1994-03-16 | American Telephone & Telegraph |
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