JPS6365655A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPS6365655A JPS6365655A JP61210167A JP21016786A JPS6365655A JP S6365655 A JPS6365655 A JP S6365655A JP 61210167 A JP61210167 A JP 61210167A JP 21016786 A JP21016786 A JP 21016786A JP S6365655 A JPS6365655 A JP S6365655A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- semiconductor device
- semiconductor element
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】 し産業上の利用分野〕 本発明は樹脂封止型半導体装置に関する。[Detailed description of the invention] Industrial application field] The present invention relates to a resin-sealed semiconductor device.
従来、この種の樹脂封止型半導体装置は、リードフレー
ムの素子搭載部に半導体素子を搭載し、金属細線により
半導体素子をリードに接続した後樹脂封止を行なうもの
であり、リードフレームの材質は、一般にFe−Ni合
金又はCu合金から作られ、封止樹脂はエポキシ樹脂が
使用されている。Conventionally, in this type of resin-sealed semiconductor device, a semiconductor element is mounted on the element mounting part of a lead frame, and the semiconductor element is connected to the leads using thin metal wires and then resin-encapsulated. is generally made from Fe-Ni alloy or Cu alloy, and epoxy resin is used as the sealing resin.
上述した従来の樹脂封止型半導体装置においては、リー
ドフレームの素子搭載部の裏面は平坦であり、また近年
半導体素子の大型化に伴ない素子搭載部面積も大型化し
ている為に、半導体装置をプリント基板などへ実装する
際のはんだ付は温度で、リードフレームと封止樹脂の膨
張差によって、リードフレームと封止樹脂との界面で剥
れが生じたり、素子搭載部裏面の端部から封止樹脂にク
ラックが入り、半導体装置の信頼性を低下させるという
問題点がある。In the conventional resin-sealed semiconductor device described above, the back surface of the element mounting portion of the lead frame is flat, and as the size of semiconductor elements has increased in recent years, the area of the element mounting portion has also increased. Soldering when mounting on a printed circuit board, etc. is temperature sensitive, and due to the difference in expansion between the lead frame and the encapsulating resin, peeling may occur at the interface between the lead frame and the encapsulating resin, or peeling may occur from the edge of the back side of the element mounting area. There is a problem in that the sealing resin cracks, reducing the reliability of the semiconductor device.
本発明の目的は、はんだ付は工程において、封止樹脂の
剥れやクラックの発生のない信頼性の向上した樹脂封止
型半導体装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed semiconductor device with improved reliability in which the sealing resin does not peel off or cracks occur during the soldering process.
本発明の樹脂封止型半導体装置は、リードフレ−ムの素
子搭載部に半導体素子を搭載し樹脂封止してなる樹脂封
止型半導体装置であって、前記リードフレームの素子搭
載部の裏面に低応力樹脂を塗布したものである。The resin-sealed semiconductor device of the present invention is a resin-sealed semiconductor device in which a semiconductor element is mounted on an element mounting portion of a lead frame and sealed with resin, and the back side of the element mounting portion of the lead frame is It is coated with low stress resin.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
第1図において、リードフレームの素子搭載部6には半
導体素子1が搭載されており、この半導体素子1は金属
細線2により外部リード3に接続されている。そして特
に、このリードフレームの素子搭載部6の裏面には軟質
で低応力のシリコーン樹脂5が塗布されており、更に半
導体素子1を含む全体がエポキシ等の封止樹脂4により
封止されている。In FIG. 1, a semiconductor element 1 is mounted on an element mounting portion 6 of a lead frame, and this semiconductor element 1 is connected to an external lead 3 by a thin metal wire 2. In particular, a soft, low-stress silicone resin 5 is applied to the back surface of the element mounting portion 6 of this lead frame, and the entire body including the semiconductor element 1 is further sealed with a sealing resin 4 such as epoxy. .
このように構成されては本実施例においては、プリント
基板への実装時における、はんだ付けによる熱衝撃をシ
リコーン樹脂5により緩和することができる。With this structure, in this embodiment, thermal shock caused by soldering during mounting on a printed circuit board can be alleviated by the silicone resin 5.
尚、低応力樹脂としてはシリコーン樹脂の外、ポリイミ
ド樹脂等を用いることができる。In addition to silicone resin, polyimide resin or the like can be used as the low stress resin.
〔発明の効果〕
以上説明した様に本発明は、リードフレームの素子搭載
部の裏面に低応力樹脂を塗布することにより、半導体装
置がプリント基板へ実装される際のはんだ接続の為の熱
衝撃を緩和出来る効果がある。[Effects of the Invention] As explained above, the present invention applies a low-stress resin to the back surface of the element mounting portion of the lead frame, thereby reducing thermal shock caused by solder connection when a semiconductor device is mounted on a printed circuit board. It has the effect of alleviating the
第1図は本発明の一実施例の断面図である。
1・・・半導体素子、2・・・金属細線、3・・・外部
リード、4・・・封止樹脂、5・・・シリコーン樹脂、
6・・・素子搭載部。FIG. 1 is a sectional view of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor element, 2... Metal thin wire, 3... External lead, 4... Sealing resin, 5... Silicone resin,
6...Element mounting section.
Claims (1)
封止してなる樹脂封止型半導体装置において、前記リー
ドフレームの素子搭載部の裏面に低応力樹脂を塗布した
ことを特徴とする樹脂封止型半導体装置。A resin-sealed semiconductor device in which a semiconductor element is mounted on an element-mounting part of a lead frame and sealed with resin, characterized in that a low-stress resin is applied to the back side of the element-mounting part of the lead frame. type semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61210167A JPS6365655A (en) | 1986-09-05 | 1986-09-05 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61210167A JPS6365655A (en) | 1986-09-05 | 1986-09-05 | Resin-sealed semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6365655A true JPS6365655A (en) | 1988-03-24 |
Family
ID=16584878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61210167A Pending JPS6365655A (en) | 1986-09-05 | 1986-09-05 | Resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6365655A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5536970A (en) * | 1992-09-29 | 1996-07-16 | Kabushiki Kaisha Toshiba | Resin-encapsulated semiconductor device |
US5864174A (en) * | 1995-10-24 | 1999-01-26 | Oki Electric Industry Co., Ltd. | Semiconductor device having a die pad structure for preventing cracks in a molding resin |
JP2008239285A (en) * | 2007-03-27 | 2008-10-09 | Fujikura Ltd | Roll material winding device |
EP2070113A2 (en) * | 2006-08-11 | 2009-06-17 | Vishay General Semiconductor LLC | Semiconductor device and method for manufacturing a semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58440B2 (en) * | 1971-11-20 | 1983-01-06 | フエルナオ・アウグスト・デ・アラウ−ホ・ヴイセンテ | Method for producing 17,21-dihydroxy-20-ketopregnans |
-
1986
- 1986-09-05 JP JP61210167A patent/JPS6365655A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58440B2 (en) * | 1971-11-20 | 1983-01-06 | フエルナオ・アウグスト・デ・アラウ−ホ・ヴイセンテ | Method for producing 17,21-dihydroxy-20-ketopregnans |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5536970A (en) * | 1992-09-29 | 1996-07-16 | Kabushiki Kaisha Toshiba | Resin-encapsulated semiconductor device |
US5864174A (en) * | 1995-10-24 | 1999-01-26 | Oki Electric Industry Co., Ltd. | Semiconductor device having a die pad structure for preventing cracks in a molding resin |
US6177725B1 (en) | 1995-10-24 | 2001-01-23 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, improved small-sized semiconductor and method of manufacturing the same |
US6459145B1 (en) | 1995-10-24 | 2002-10-01 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, and improved small-sized semiconductor |
US6569755B2 (en) | 1995-10-24 | 2003-05-27 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, improved small sized semiconductor and method of manufacturing the same |
EP2070113A2 (en) * | 2006-08-11 | 2009-06-17 | Vishay General Semiconductor LLC | Semiconductor device and method for manufacturing a semiconductor device |
JP2010500757A (en) * | 2006-08-11 | 2010-01-07 | ヴィシャイ ジェネラル セミコンダクター エルエルシー | Semiconductor device and manufacturing method of semiconductor device |
EP2070113B1 (en) * | 2006-08-11 | 2016-10-05 | Vishay General Semiconductor LLC | Semiconductor device and method for manufacturing a semiconductor device |
JP2008239285A (en) * | 2007-03-27 | 2008-10-09 | Fujikura Ltd | Roll material winding device |
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