JPS63503583A - ３‐５半導体基板にデバイスを製作する方法及びそれによって形成されたデバイス - Google Patents
３‐５半導体基板にデバイスを製作する方法及びそれによって形成されたデバイスInfo
- Publication number
- JPS63503583A JPS63503583A JP62503848A JP50384887A JPS63503583A JP S63503583 A JPS63503583 A JP S63503583A JP 62503848 A JP62503848 A JP 62503848A JP 50384887 A JP50384887 A JP 50384887A JP S63503583 A JPS63503583 A JP S63503583A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- nickel
- electrical contact
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87807786A | 1986-06-24 | 1986-06-24 | |
| US878,077 | 1986-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63503583A true JPS63503583A (ja) | 1988-12-22 |
Family
ID=25371327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62503848A Pending JPS63503583A (ja) | 1986-06-24 | 1987-06-22 | ３‐５半導体基板にデバイスを製作する方法及びそれによって形成されたデバイス |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0272303A1 (fr) |
| JP (1) | JPS63503583A (fr) |
| CA (1) | CA1310433C (fr) |
| WO (1) | WO1988000392A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020502788A (ja) * | 2016-12-22 | 2020-01-23 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | Ｉｉｉ−ｖ族材料を含む素子およびシリコン処理工程と互換性を有する接触部を形成する処理 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5011792A (en) * | 1990-02-12 | 1991-04-30 | At&T Bell Laboratories | Method of making ohmic resistance WSb, contacts to III-V semiconductor materials |
| JP3654037B2 (ja) | 1999-03-25 | 2005-06-02 | 住友電気工業株式会社 | オーミック電極とその製造方法、および半導体装置 |
| US6881983B2 (en) | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
| US6911079B2 (en) * | 2002-04-19 | 2005-06-28 | Kopin Corporation | Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
| US7002180B2 (en) | 2002-06-28 | 2006-02-21 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting device |
| US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
| TW200401462A (en) | 2002-06-17 | 2004-01-16 | Kopin Corp | Light-emitting diode device geometry |
| US6955985B2 (en) | 2002-06-28 | 2005-10-18 | Kopin Corporation | Domain epitaxy for thin film growth |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7122841B2 (en) | 2003-06-04 | 2006-10-17 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting devices |
| DE112012004882B4 (de) | 2011-11-23 | 2022-12-29 | Acorn Technologies, Inc. | Verbesserung von Metallkontakten zu Gruppe-IV-Halbleitern durch Einfügung grenzflächiger atomischer Monoschichten |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| WO2018094205A1 (fr) | 2016-11-18 | 2018-05-24 | Acorn Technologies, Inc. | Transistor à nanofils à source et drain induits par des contacts électriques avec une hauteur de barrière de schottky négative |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162358A (ja) * | 1986-01-13 | 1987-07-18 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
-
1987
- 1987-06-22 EP EP87904351A patent/EP0272303A1/fr not_active Ceased
- 1987-06-22 JP JP62503848A patent/JPS63503583A/ja active Pending
- 1987-06-22 WO PCT/US1987/001520 patent/WO1988000392A1/fr not_active Application Discontinuation
- 1987-06-23 CA CA000540407A patent/CA1310433C/fr not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162358A (ja) * | 1986-01-13 | 1987-07-18 | Toshiba Corp | 半導体装置及びその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020502788A (ja) * | 2016-12-22 | 2020-01-23 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | Ｉｉｉ−ｖ族材料を含む素子およびシリコン処理工程と互換性を有する接触部を形成する処理 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1310433C (fr) | 1992-11-17 |
| EP0272303A1 (fr) | 1988-06-29 |
| WO1988000392A1 (fr) | 1988-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2666237B2 (ja) | ３族窒化物半導体発光素子 | |
| US5959401A (en) | Light-emitting semiconductor device using group III nitride compound | |
| US8168965B2 (en) | Semiconductor device and method using nanotube contacts | |
| US5247533A (en) | Gallium nitride group compound semiconductor laser diode | |
| JP3654738B2 (ja) | ３族窒化物半導体発光素子 | |
| JPS63503583A (ja) | ３‐５半導体基板にデバイスを製作する方法及びそれによって形成されたデバイス | |
| US6838816B2 (en) | Light emitting diode with nanoparticles | |
| US20120007048A1 (en) | III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer | |
| KR0142099B1 (ko) | Iii-v족 반도체 재료의 도핑된 층 및 도핑된 층에 대한 오옴성 접점을 구비한 반도체 디바이스 | |
| JPS6327851B2 (fr) | ||
| US4839714A (en) | High-gain photodetectors made from NIPI mesas with selective lateral contacts | |
| US7435605B2 (en) | Method for fabricating a component having an electrical contact region | |
| KR100538199B1 (ko) | Ⅲ족 질화물계 화합물 반도체 장치를 제조하는 방법 | |
| JP2001148508A (ja) | 窒化物半導体素子及びその製造方法 | |
| Fehly et al. | Monolithic InGaAsP optoelectronic devices with silicon electronics | |
| US5063174A (en) | Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor | |
| US5039578A (en) | Method for fabricating devices in III-V semiconductor substrates and devices formed thereby | |
| JP2008140811A (ja) | 半導体素子の製造方法 | |
| JP3016241B2 (ja) | ３族窒化物半導体発光素子 | |
| KR100737821B1 (ko) | 발광 소자 및 그 제조방법 | |
| JP3307094B2 (ja) | ３族窒化物半導体発光素子 | |
| Cohen et al. | Direct molybdenum contacts to silicon | |
| TW202429681A (zh) | 具有雜質吸除之電子裝置 | |
| FR2809866A1 (fr) | Procede de croissance amorphe et polycristalline pour compose semi-conducteur a base de nitrure de gallium | |
| JPH09232198A (ja) | 半導体基板の製造方法 |