JPS634698B2 - - Google Patents
Info
- Publication number
- JPS634698B2 JPS634698B2 JP56113239A JP11323981A JPS634698B2 JP S634698 B2 JPS634698 B2 JP S634698B2 JP 56113239 A JP56113239 A JP 56113239A JP 11323981 A JP11323981 A JP 11323981A JP S634698 B2 JPS634698 B2 JP S634698B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- chamber
- cassette
- constant temperature
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012545 processing Methods 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は、荷電ビーム露光装置の恒温化に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to constant temperature of a charged beam exposure apparatus.
近時、半導体ウエハやマスク基板等の試料に微
細なパターンを形成する技術として、電子ビーム
を利用した電子ビーム露光装置が開発されてい
る。この装置では、描画速度の向上をはかると共
に、±0.1〔μm〕程度の高い描画位置精度を実現す
ることが重要な開発課題となつている。描画位置
精に係わる基本的な要素の１つに装置の恒温化が
ある。例えば、３×10-6〔cm／℃〕の低熱膨張係
数を有した150〔mm〕角のマスク基板の温度が１
〔℃〕変化すると0.45〔μm〕の熱変形が生じ、前
述した描画位置精度を得ることは困難となる。 2. Description of the Related Art Recently, an electron beam exposure apparatus using an electron beam has been developed as a technique for forming fine patterns on samples such as semiconductor wafers and mask substrates. An important development issue for this device is to improve the drawing speed and achieve a high drawing position accuracy of approximately ±0.1 [μm]. One of the basic elements related to drawing position accuracy is constant temperature of the apparatus. For example, if the temperature of a 150 [mm] square mask substrate with a low coefficient of thermal expansion of 3 × 10 -6 [cm/℃] is 1
When the temperature changes [°C], thermal deformation of 0.45 [μm] occurs, making it difficult to obtain the above-mentioned drawing position accuracy.
第１図は従来の電子ビーム露光装置を模式的に
示す概略構成図である。加工室１および予備室２
が連接して設けられ、これら各室１，２間は真空
バルブ３にて遮断されている。加工室１内にはＸ
−Ｙステージ４が配設され、このテーブル４は駆
動機構５によりＸ方向（紙面左右方向）およびＹ
方向（紙面表裏方向）に移動されるものとなつて
いる。また、予備室２内には試料としてのマスク
基板６を内蔵したカセツト７を複数個装填したマ
ガジン８が配設されている。そして、このマガジ
ン８内のカセツト７が搬送機構９により１個ずつ
搬送され、前記加工室１内のＸ−Ｙステージ４上
に載置されるものとなつている。また、加工室１
および予備室２の各外壁面には、恒温水用配管１
０，１１がそれぞれ取着されている。そして、こ
れらの配管１０，１１内に恒温水系１２，１３か
らそれぞれ恒温水が通流され、加工室１および予
備室２が略同温度に恒温化されるものとなつてい
る。また、加工室１内および予備室２内は真空ポ
ンプ１４，１５によりそれぞれ真空排気されてい
る。 FIG. 1 is a schematic configuration diagram schematically showing a conventional electron beam exposure apparatus. Processing room 1 and preliminary room 2
These chambers 1 and 2 are connected to each other, and a vacuum valve 3 isolates the chambers 1 and 2 from each other. There is an X in processing room 1.
- A Y stage 4 is provided, and this table 4 is moved in the X direction (left and right direction in the paper) and in the Y direction by a drive mechanism 5.
direction (front and back direction of the page). Further, in the preliminary chamber 2, a magazine 8 loaded with a plurality of cassettes 7 containing mask substrates 6 as samples is provided. The cassettes 7 in this magazine 8 are transported one by one by a transport mechanism 9 and placed on the XY stage 4 in the processing chamber 1. In addition, processing room 1
And on each outer wall of the preliminary room 2, constant temperature water piping 1 is installed.
0 and 11 are attached respectively. Constant temperature water is flowed through these pipes 10 and 11 from constant temperature water systems 12 and 13, respectively, so that the processing chamber 1 and the preparatory chamber 2 are kept at approximately the same temperature. Further, the inside of the processing chamber 1 and the inside of the preliminary chamber 2 are evacuated by vacuum pumps 14 and 15, respectively.
一方、前記加工室１の上方には、電子銃１６、
コンデンサレンズ１７，１８、対物レンズ１９お
よび偏向器（図示せず）等からなる電子光学鏡筒
２０が設けられている。そして、この電子光学鏡
筒２０からの電子ビーム照射およびＸ−Ｙステー
ジ４の移動により、Ｘ−Ｙステージ４上のカセツ
ト７に内蔵されたマスク基板６が所望のパターン
に描画されるものとなつている。 On the other hand, above the processing chamber 1, an electron gun 16,
An electron optical lens barrel 20 consisting of condenser lenses 17, 18, an objective lens 19, a deflector (not shown), and the like is provided. By irradiating the electron beam from the electron optical lens barrel 20 and moving the X-Y stage 4, a desired pattern is drawn on the mask substrate 6 built in the cassette 7 on the X-Y stage 4. ing.
ところが、この種の装置にあつては次のような
問題があつた。すなわち、前記加工室１および予
備室２の温度は恒温水配管１０，１１および恒温
水系１２，１３により温度制御されているが、加
工室１内のＸ−Ｙステージ４上の温度は電子光学
鏡筒２０、特に対物レンズ１９からの熱放射によ
り、上記制御温度よりも高くなる。本発明者等は
上記Ｘ−Ｙステージ４上の温度上昇に起因してマ
スク基板６の描画位置精度が低下することを見出
した。本発明者等の実験によれば、予備室２内の
カセツト７を加工室１内のＸ−Ｙステージ４上へ
搬送すると、カセツト７の温度TCは30分程度で
Ｘ−Ｙステージ４の温度TSに近づく一方、マス
ク基板６の温度TMは対物レンズ１９からの熱放
射により、ステージ温度TSより0.3〔℃〕高い温度
TMOに近づくことが判明した。また、予備室２内
ではカセツト７を恒温化するのに数10時間要する
ことも判明した。カセツト７の材料は通常アルミ
ニウム合金であり、その熱膨張率は2.7×10-5
〔cm／℃〕と大きく、200〔mm〕角のカセツト７が
0.1〔℃〕温度変化を来しただけでも0.54〔μm〕の
熱変形が生じる。そして、カセツト７が変形する
と、その中に収納されているマスク基板６が上記
変形に応じて移動し、描画位置精度が著しく損な
われることになる。 However, this type of device has the following problems. That is, the temperatures in the processing chamber 1 and the preliminary chamber 2 are controlled by constant temperature water pipes 10, 11 and constant temperature water systems 12, 13, but the temperature on the X-Y stage 4 in the processing chamber 1 is controlled by an electron optical mirror. Thermal radiation from the tube 20 and in particular the objective lens 19 causes the temperature to rise above the control temperature. The inventors of the present invention have discovered that the accuracy of the drawing position of the mask substrate 6 decreases due to the temperature increase on the XY stage 4. According to experiments conducted by the present inventors, when the cassette 7 in the preliminary chamber 2 is transferred onto the X-Y stage 4 in the processing chamber 1, the temperature T C of the cassette 7 rises to the level of the X-Y stage 4 in about 30 minutes. While the temperature T S approaches the temperature T S, the temperature T M of the mask substrate 6 becomes 0.3 [°C] higher than the stage temperature T S due to thermal radiation from the objective lens 19.
It turned out to be closer to T MO . It has also been found that it takes several tens of hours to maintain the temperature of the cassette 7 in the preliminary chamber 2. The material of the cassette 7 is usually aluminum alloy, and its coefficient of thermal expansion is 2.7×10 -5
The cassette 7 is as large as [cm/℃] and 200 [mm] square.
A temperature change of just 0.1 [℃] causes thermal deformation of 0.54 [μm]. When the cassette 7 deforms, the mask substrate 6 housed therein moves in accordance with the deformation, resulting in a significant loss of drawing position accuracy.
また、実験によれば、描画位置精度±0.1〔μm〕
を得るには、200〔mm〕角アルミニウム合金製カセ
ツトおよび150〔mm〕角低熱膨張率マスク基板を用
いる通常の条件では、前記各温度TC、TM、TMO
を次式のように制御する必要があつた。 Also, according to experiments, the drawing position accuracy is ±0.1 [μm]
Under normal conditions using a 200 mm square aluminum alloy cassette and a 150 mm square low thermal expansion coefficient mask substrate,
It was necessary to control as shown in the following equation.
｜TC−TM｜≦0.02 〔℃〕
｜TC−TMO｜≦0.2 〔℃〕 ……(1)
このような温度制御は通常の装置では不可能で
あり、このため特に高い描画精度を要求される場
合にはＸ−Ｙステージ４上にカセツト７を30〜60
分間放置した後描画を行うようにしている。しか
しながら、このようにカセツト７の恒温化を待つ
ことは、マスク基板６の製造時間の増大となり、
ひいては製造コストの増大化を招いた。また、上
述した問題は電子ビーム露光装置のみならず、イ
オンビーム露光装置についても云えることであ
る。 ｜T C −T M ｜≦0.02 [℃] ｜T C −T MO ｜≦0.2 [℃] ...(1) Such temperature control is not possible with normal equipment, and therefore particularly high drawing accuracy is required. If required, place 30 to 60 cassettes 7 on the X-Y stage 4.
I try to draw after leaving it for a minute. However, waiting for the temperature of the cassette 7 to become constant in this way increases the manufacturing time of the mask substrate 6.
This in turn led to an increase in manufacturing costs. Furthermore, the above-mentioned problems apply not only to electron beam exposure apparatuses but also to ion beam exposure apparatuses.
本発明はこのような事情を考慮してなされたも
ので、その目的とするところは、荷電ビーム露光
に供される試料の描画速度の低下を招くことな
く、描画位置精度の向上をはかり得る荷電ビーム
露光装置を提供することにある。 The present invention has been made in consideration of these circumstances, and its purpose is to provide a charged charge beam that can improve the drawing position accuracy without causing a decrease in the drawing speed of a sample subjected to charged beam exposure. An object of the present invention is to provide a beam exposure device.
まず、本発明の概要を説明する。本発明の骨子
は十分な描画位置精度を得るための恒温化条件を
明らかにし、その条件を満たすための恒温化手段
を設けたことである。すなわち、予備室内に収容
されるカセツトを予め所定温度に恒温化する恒温
箱を設けると共に、加工室、予備室および対物レ
ンズ下面をそれぞれ恒温化する手段を設け、上記
加工室内のステージ温度TS、予備室内のカセツ
ト温度TC1および対物レンズ下面の温度TLを略等
しい値に設定し、且つ恒温箱内のカセツト温度
TC2を予備室内のカセツト温度TC1よりも僅かに
高い温度に設定するようにしたものである。 First, an overview of the present invention will be explained. The gist of the present invention is to clarify the constant temperature conditions for obtaining sufficient drawing position accuracy, and to provide constant temperature means to satisfy the conditions. That is, a constant temperature box is provided to keep the cassettes housed in the preparatory chamber at a predetermined temperature, and a means is also provided to keep the temperature of the processing chamber, the preparatory chamber, and the lower surface of the objective lens constant, so that the stage temperature T S in the processing chamber, The cassette temperature T C1 in the preliminary chamber and the temperature T L of the bottom surface of the objective lens are set to approximately equal values, and the cassette temperature in the constant temperature box is
T C2 is set at a temperature slightly higher than the cassette temperature T C1 in the preliminary chamber.
したがつて本発明によれば、予備室内から加工
室内のＸ−Ｙステージ上に搬送され載置されたカ
セツトの温度変化を極めて小さくすることができ
る。また、恒温箱内で予め恒温化したカセツトを
予備室内に収容しているので、予備室内でカセツ
トを恒温化するのに要した時間を大幅に短縮する
ことができる。しかも、恒温箱内のカセツト温度
を予備室内のカセツト温度よりも僅かに高くして
いるので、予備室内にカセツトを導入したのちの
予備室の真空排気に伴うカセツト温度の低下と合
いまつて、予備室内でのカセツトの恒温化に要す
る時間をより短縮することができる。このため、
描画に要する時間の増大を招くことなく、描画位
置精度の大幅な向上をはかり得ると云う効果を奏
する。また、上記理由から製造時間の短縮化をも
はかり得て試料製造コストの低減化に寄与し得る
等の利点がある。 Therefore, according to the present invention, the temperature change of the cassette transported from the preliminary chamber to the XY stage in the processing chamber and placed thereon can be made extremely small. Furthermore, since the cassettes that have been kept at a constant temperature in the thermostatic box are stored in the preliminary chamber, the time required to maintain the temperature of the cassettes in the preliminary chamber can be significantly shortened. Moreover, since the temperature of the cassette in the thermostatic box is slightly higher than that in the preparatory chamber, the temperature of the cassette in the preparatory chamber decreases due to the evacuation of the preparatory chamber after the cassette is introduced into the preparatory chamber. The time required to keep the temperature of the cassette indoors can be further shortened. For this reason,
This has the effect that the drawing position accuracy can be significantly improved without increasing the time required for drawing. Further, for the above-mentioned reasons, there is an advantage that the manufacturing time can be shortened and the sample manufacturing cost can be reduced.
以下、本発明の詳細を図示の実施例によつて説
明する。 Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第２図は本発明の一実施例を模式的に示す概略
構成図である。なお、第１図と同一部分には同一
符号を付して、その詳しい説明は省略する。この
実施例が第１図に示した従来装置と異なる点は、
恒温箱２１、恒温水配管２２、恒温水系２３、温
度センサ２４，〜，２６および温度計２７，〜２
９を設けたことにある。すなわち、恒温箱２１は
マガジン８を収容するものであり、所定温度に保
持されている。そして、この恒温箱２１により予
備室２内に収容されるカセツト７は予め恒温化さ
れるものとなつている。また、対物レンズ１９の
近傍の加工室壁面には恒温水配管２２が取着され
ており、この配管２２内に恒温水系２３からの恒
温水を通流することにより、対物レンズ１９の下
面の温度TLが恒温化され対物レンズ１９の下面
からの熱放射が抑制されている。恒温箱２１内の
カセツト７の温度TC2は温度センサ２４にて検出
され温度計２７に表示され、予備室２内のカセツ
ト７の温度TC1は温度センサ２５にて検出され、
温度計２８に表示される。同様に、加工室１内の
ステージ４の温度TSは温度センサ２６にて検出
され温度計２９に表示されるものとなつている。
なお、第２図には示さないが加工室１内および予
備室２内は前記真空ポンプ１４，１５により、そ
れぞれ真空排気されるものとなつている。 FIG. 2 is a schematic configuration diagram schematically showing an embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted. This embodiment differs from the conventional device shown in FIG.
Constant temperature box 21, constant temperature water piping 22, constant temperature water system 23, temperature sensors 24, ~, 26, and thermometers 27, ~2
This is due to the fact that 9 was established. That is, the thermostatic box 21 houses the magazine 8 and is maintained at a predetermined temperature. The temperature of the cassette 7 housed in the preliminary chamber 2 is kept constant by the constant temperature box 21. Further, a constant temperature water pipe 22 is attached to the wall surface of the processing chamber near the objective lens 19, and by flowing constant temperature water from a constant temperature water system 23 into this pipe 22, the temperature of the lower surface of the objective lens 19 is increased. T L is kept at a constant temperature, and heat radiation from the lower surface of the objective lens 19 is suppressed. The temperature T C2 of the cassette 7 in the constant temperature box 21 is detected by the temperature sensor 24 and displayed on the thermometer 27, and the temperature T C1 of the cassette 7 in the preliminary chamber 2 is detected by the temperature sensor 25.
displayed on the thermometer 28. Similarly, the temperature T S of the stage 4 in the processing chamber 1 is detected by a temperature sensor 26 and displayed on a thermometer 29.
Although not shown in FIG. 2, the inside of the processing chamber 1 and the inside of the preliminary chamber 2 are evacuated by the vacuum pumps 14 and 15, respectively.
このように構成された本装置の作用を説明す
る。まず、恒温箱２１内にマガジン８を十分な時
間保管しTC2≒TSとする。次に、このマガジン８
を予備室２内に速やかに移し、予備室２内を大気
圧から真空にする。この場合、大気圧状態から真
空状態へ移行するときの断熱膨張によりカセツト
温度TC1は0.1〔℃〕程低下する。次に、カセツト
７を加工室１内のＸ−Ｙステージ４上に搬送しマ
スク基板６の描画を行う。描画精度±0.1〔μm〕
を得る条件は、実験の結果次の通りであつた。 The operation of this device configured in this way will be explained. First, the magazine 8 is stored in the thermostatic box 21 for a sufficient period of time so that T C2 ≈TS . Next, this magazine 8
is quickly moved into the preliminary chamber 2, and the interior of the preliminary chamber 2 is made from atmospheric pressure to vacuum. In this case, the cassette temperature T C1 decreases by about 0.1 [°C] due to adiabatic expansion when transitioning from an atmospheric pressure state to a vacuum state. Next, the cassette 7 is transferred onto the XY stage 4 in the processing chamber 1, and the mask substrate 6 is drawn. Drawing accuracy ±0.1 [μm]
The conditions for obtaining this were as follows as a result of the experiment.
TS＝TC1
TC2＝TC1＋0.1 〔℃〕
０＜TL−TS＜0.5 〔℃〕 ……(2)
そして、上記第２式に示す条件は恒温水配管１
０，１１，２２に流す恒温水のそれぞれの温度
TW、TP、TLWおよび恒温箱２１の温度TBで決定
されることが判明した。また、実験によれば調整
時に前記各温度TS、TC1、TC2、TLを測定し、上
記第２式の関係から得られるように恒温水系１
２，１３，２３および恒温箱２１の温度をセツト
しさえすれば、その後は恒温水系１２，１３，２
３と恒温箱２１との温度制御のみで、上記第２式
の条件が達成されることが判つた。 T S = T C1 T C2 = T C1 +0.1 [℃] 0<T L −T S <0.5 [℃] ...(2) And the conditions shown in the second equation above are constant temperature water piping 1
Each temperature of constant temperature water flowing to 0, 11, 22
It was found that it is determined by T W , T P , T LW and the temperature T B of the constant temperature box 21. Also, according to experiments, the temperatures T S , T C1 , T C2 , and T L were measured during adjustment, and the constant temperature water system 1 was
2, 13, 23 and the constant temperature box 21, then the constant temperature water system 12, 13, 2
It was found that the condition of the above-mentioned formula 2 can be achieved only by controlling the temperature of the thermostatic box 21 and the thermostatic box 21.
かくして本装置によれば、調整時に１回だけＸ
−Ｙステージ４やカセツト７等の温度を測定し、
それらが設定温度となるような恒温水および恒温
箱２１の温度条件を求めておけば、恒温水と恒温
箱２１との温度制御のみで、前述した±0.1〔μm〕
の高い描画位置精度が得られるようになつた。 Thus, according to the present device, X is applied only once during adjustment.
- Measure the temperature of Y stage 4, cassette 7, etc.
If you find the temperature conditions of the constant temperature water and constant temperature box 21 so that they reach the set temperature, you can control the temperature of the constant temperature water and constant temperature box 21 only to achieve the above-mentioned ±0.1 [μm].
It is now possible to obtain high drawing position accuracy.
なお、本発明は上述した実施例に限定されるも
のではない。例えば、前記恒温水の温度を制御す
る代りに前対物レンズ外筒、加工室外壁および予
備室外壁が一定温度となるよう制御してもよい。
さらに、加工室および予備室を恒温化する恒温水
系を一体形成するようにしてもよい。また、それ
ほど高い（±0.1μm程度）描画位置精度が要求さ
れない場合、前記各温度TS、TC1、TC2、TLを次
式
｜TS−TC1｜≦0.1〔℃〕
０≦TC2−TC1≦0.1〔℃〕
０≦TL−TS≦１ 〔℃〕 ……(3)
で示される条件にしてもよい。さらに、対物レン
ズを直接恒温化しなくても、対物レンズ外筒およ
び加工室上面を恒温化すれば、上記第３式の条件
は満たされる。また、実施例では電子ビーム露光
装置の場合を示したが、イオンビーム露光装置に
も適用できるのは勿論のことである。その他、本
発明の要旨を逸脱しない範囲で、種々変形して実
施することができる。 Note that the present invention is not limited to the embodiments described above. For example, instead of controlling the temperature of the constant temperature water, the temperature of the front objective lens outer cylinder, the outer wall of the processing chamber, and the outer wall of the preliminary chamber may be controlled to be at a constant temperature.
Furthermore, a constant temperature water system that keeps the temperature of the processing chamber and the preparatory chamber constant may be integrally formed. In addition, if very high (approximately ±0.1 μm) drawing position accuracy is not required, the temperatures T S , T C1 , T C2 , and T L can be expressed as follows: |T S −T C1 |≦0.1 [℃] 0≦T C2 −T C1 ≦0.1 [°C] 0≦T L −T S ≦1 [°C] …The conditions shown in (3) may be used. Furthermore, even if the objective lens is not directly kept at a constant temperature, the condition of the third equation is satisfied if the objective lens outer cylinder and the upper surface of the processing chamber are kept at a constant temperature. Furthermore, although the embodiments have shown the case of an electron beam exposure apparatus, it goes without saying that the present invention can also be applied to an ion beam exposure apparatus. In addition, various modifications can be made without departing from the gist of the present invention.
第１図は従来装置の一例を模式的に示す概略構
成図、第２図は本発明の一実施例を模式的に示す
概略構成図である。
１……加工室、２……予備室、４……Ｘ−Ｙス
テージ、６……マスク基板（試料）、７……カセ
ツト、８……マガジン、１０，１１，２２……恒
温水配管、１２，１３，２３……恒温水系、２０
……電子光学鏡筒、１９……対物レンズ、２１…
…恒温箱、２４，２５，２６……温度センサ、２
７，２８，２９……温度計。
FIG. 1 is a schematic diagram schematically showing an example of a conventional device, and FIG. 2 is a schematic diagram schematically showing an embodiment of the present invention. 1... Processing room, 2... Preliminary room, 4... X-Y stage, 6... Mask substrate (sample), 7... Cassette, 8... Magazine, 10, 11, 22... Constant temperature water piping, 12, 13, 23... constant temperature water system, 20
...Electron optical lens barrel, 19...Objective lens, 21...
...Thermostat box, 24, 25, 26...Temperature sensor, 2
7, 28, 29...Thermometer.
Claims (1)
を加工室内のＸ−Ｙステージ上に搬送載置し、上
記試料を荷電ビームで露光する荷電ビーム露光装
置において、前記予備室内に収容されるカセツト
を予め所定温度に保持する恒温箱を設けると共
に、前記加工室、予備室および前記Ｘ−Ｙステー
ジに対向する対物レンズ下面をそれぞれ恒温化す
る手段を設け、前記加工室内のステージ温度TS、
前記予備室内のカセツト温度TC1および前記対物
レンズ下面の温度TLを略等しい値に設定し、且
つ前記恒温箱内のカセツト温度TC2を前記予備室
内のカセツト温度TC1より僅かに高い温度に設定
してなることを特徴とする荷電ビーム露光装置。 ２ 前記恒温化する手段は、前記加工室壁面、予
備室壁面および対物レンズ近傍に恒温水を通流せ
しめるものであることを特徴とする特許請求の範
囲第１項記載の荷電ビーム露光装置。 ３ 前記各温度TS、TC1、TC2、TLを ｜TS−TC1｜≦0.1 〔℃〕 ０＜TC2−TC1≦0.1 〔℃〕 ０≦TL−TS≦１ 〔℃〕 に制御したことを特徴とする特許請求の範囲第１
項記載の荷電ビーム露光装置。 ４ 前記各温度TS、TC1、TC2、TLを TS＝TC1 〔℃〕 TC2＝TC1＋0.1 〔℃〕 ０≦TL−TS＜0.5 〔℃〕 に制御したことを特徴とする特許請求の範囲第１
項記載の荷電ビーム露光装置。[Scope of Claims] 1. In a charged beam exposure apparatus in which a cassette holding a sample and housed in a preliminary chamber is transported and placed on an X-Y stage in a processing chamber, and the sample is exposed to a charged beam, the sample is placed in a preliminary chamber. A constant temperature box is provided to keep the cassettes housed in the processing chamber at a predetermined temperature in advance, and a means for constant temperature is provided for each of the processing chamber, the preparatory chamber, and the lower surface of the objective lens facing the XY stage, and the stage in the processing chamber is Temperature T S ,
The cassette temperature T C1 in the preliminary chamber and the temperature T L of the lower surface of the objective lens are set to approximately equal values, and the cassette temperature T C2 in the thermostatic box is set to a slightly higher temperature than the cassette temperature T C1 in the preliminary chamber. 1. A charged beam exposure device characterized by being configured. 2. The charged beam exposure apparatus according to claim 1, wherein the temperature constant means causes constant temperature water to flow through the processing chamber wall surface, the preparatory chamber wall surface, and the vicinity of the objective lens. 3 For each of the above temperatures T S , T C1 , T C2 , T L ｜T S −T C1 |≦0.1 [℃] 0<T C2 −T C1 ≦0.1 [℃] 0≦T L −T S ≦1 [ [Claim 1]
Charged beam exposure apparatus as described in 2. 4 The above temperatures T S , T C1 , T C2 , and T L were controlled to T S = T C1 [°C] T C2 = T C1 +0.1 [°C] 0≦T L −T S <0.5 [°C] Claim 1 characterized in that
Charged beam exposure apparatus as described in 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11323981A JPS5815232A (en) | 1981-07-20 | 1981-07-20 | Apparatus for exposing charged particle beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11323981A JPS5815232A (en) | 1981-07-20 | 1981-07-20 | Apparatus for exposing charged particle beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5815232A JPS5815232A (en) | 1983-01-28 |
| JPS634698B2 true JPS634698B2 (en) | 1988-01-30 |
Family
ID=14607088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11323981A Granted JPS5815232A (en) | 1981-07-20 | 1981-07-20 | Apparatus for exposing charged particle beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5815232A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6070553U (en) * | 1983-10-21 | 1985-05-18 | 大日本印刷株式会社 | Bag with straw piercing part |
| JPS6089365A (en) * | 1983-10-21 | 1985-05-20 | 大日本印刷株式会社 | Method of forming section which can be pierced to piercing-resistant laminated material |
| JPS60110269U (en) * | 1983-12-28 | 1985-07-26 | 大日本印刷株式会社 | Bags with opening grooves |
| JPS60110267U (en) * | 1983-12-28 | 1985-07-26 | 大日本印刷株式会社 | bag with pierceable part |
| JPS60110268U (en) * | 1983-12-28 | 1985-07-26 | 大日本印刷株式会社 | Containers with pierceable parts |
| JPS60157665U (en) * | 1984-03-28 | 1985-10-21 | 大日本印刷株式会社 | Containers with pierceable parts |
| JPS6129029A (en) * | 1984-07-19 | 1986-02-08 | 三菱電機株式会社 | Method of indicating terminal number or like in solenoid relay or like |
| AT393334B (en) * | 1988-01-22 | 1991-09-25 | Ims Ionen Mikrofab Syst | ARRANGEMENT FOR STABILIZING AN IRRADIATED MASK |
| JP2901193B2 (en) * | 1989-12-08 | 1999-06-07 | 三菱電機株式会社 | Temperature control method in exposure apparatus |
| JPH05228669A (en) * | 1991-12-27 | 1993-09-07 | Polymer Processing Res Inst | Method and device for manufacturing perforated web with light beam |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100668A (en) * | 1978-01-26 | 1979-08-08 | Toshiba Corp | Electron-beam exposure unit |
| JPS5543844A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Method and apparatus for photoresist sensitizing process |
| JPS55133537A (en) * | 1979-04-06 | 1980-10-17 | Hitachi Ltd | Temperature controlling device for electron beam appliance |
-
1981
- 1981-07-20 JP JP11323981A patent/JPS5815232A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100668A (en) * | 1978-01-26 | 1979-08-08 | Toshiba Corp | Electron-beam exposure unit |
| JPS5543844A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Method and apparatus for photoresist sensitizing process |
| JPS55133537A (en) * | 1979-04-06 | 1980-10-17 | Hitachi Ltd | Temperature controlling device for electron beam appliance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5815232A (en) | 1983-01-28 |
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