JPS6333296B2 - - Google Patents
Info
- Publication number
- JPS6333296B2 JPS6333296B2 JP55165349A JP16534980A JPS6333296B2 JP S6333296 B2 JPS6333296 B2 JP S6333296B2 JP 55165349 A JP55165349 A JP 55165349A JP 16534980 A JP16534980 A JP 16534980A JP S6333296 B2 JPS6333296 B2 JP S6333296B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- tip
- discharge
- spherical
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 241000587161 Gomphocarpus Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はワイヤの先端を不活性雰囲気中で放電
によつて球状にし、これを半導体素子に接続する
ワイヤボンデイング方法に関し、特にワイヤの球
状化に関する。半導体装置、IC等の組立工程の
一つとして、回路素子の電極とリードの内端とを
ワイヤで接続するワイヤボンデイングがある。こ
のワイヤボンデイングにあつて、最近ではアルミ
ニウムからなるワイヤの先端を不活性雰囲気中の
ハウジング内で放電によつて球状塊化した後、ネ
イルヘツドワイヤボンデイング方法でワイヤボン
デイングを行なう方法が提案されている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding method in which the tip of a wire is made spherical by electric discharge in an inert atmosphere and connected to a semiconductor device, and particularly relates to sphericalization of a wire. One of the assembly processes for semiconductor devices, ICs, etc. is wire bonding, which connects the electrodes of circuit elements and the inner ends of leads with wires. Regarding this wire bonding, a method has recently been proposed in which the tip of an aluminum wire is made into a ball by electric discharge in a housing in an inert atmosphere, and then wire bonding is performed using a nail head wire bonding method. .
しかし、このハウジング方式では、ハウジング
内を常に不活性ガスで充満させておくことは難か
しく、ワイヤ先端の球状化が図りにくく、球状塊
形成が安定しない。また、ハウジング方式はその
サイズが大きいためワイヤボンデイング装置への
取り付けが困難であるとともに、作業性も悪い。 However, in this housing method, it is difficult to keep the inside of the housing constantly filled with inert gas, it is difficult to make the tip of the wire spherical, and the formation of a spherical lump is not stable. In addition, the housing method is difficult to attach to a wire bonding device due to its large size, and has poor workability.
したがつて、本発明のワイヤ先端を安定して球
状化することができるワイヤボンデイング方法を
提供することにある。このような目的を達成する
ために本発明は、不活性ガス雰囲気中でボンデイ
ングツールから下方に突出したワイヤ先端と放電
電極との間に放電を生じさせてワイヤ先端を球状
にし、得られた球状部を用いて上記ワイヤを半導
体素子に接続するワイヤボンデイング方法におい
て、前記ワイヤの延長線の下方から前記ワイヤ先
端に向かつて不活性ガスを供給しながら前記ワイ
ヤ先端と前記放電電極との間に放電を生じさせる
ようにしたことを特徴とするものであります。以
下、本発明の前提となる技術および本発明を説明
する。 Therefore, it is an object of the present invention to provide a wire bonding method that can stably make the tip of the wire spherical. In order to achieve such an object, the present invention creates a discharge between a wire tip protruding downward from a bonding tool and a discharge electrode in an inert gas atmosphere to make the wire tip spherical, and the resulting spherical shape In the wire bonding method in which the wire is connected to a semiconductor element using a wire, a discharge is caused between the wire tip and the discharge electrode while supplying an inert gas from below the extension line of the wire toward the wire tip. It is characterized by being designed to cause The technology on which the present invention is based and the present invention will be described below.
第１図は本発明の前提となる技術に用いる球状
化機構部を示す。放電電極１はパイプからなると
ともに、アルミニウムのワイヤ２を保持するボン
デイングツール（ここではキヤピラリ）３の下端
に臨む先端は、パイプの下部のみがそのまま延長
し、放電端４を形作つている。この結果、放電端
４に上方からワイヤ２が臨み、ワイヤ２と放電端
４間に所定の電圧が印加されると、ワイヤ２の先
端と放電端４との間には放電が生じ、ワイヤ２の
先端は溶ける。この際、放電電極１の先端部から
は常にアルゴンまたは窒素等の不活然ガスが放出
されているため、ワイヤ２の先端部、すなわち放
電空間は不活性ガスで充満され、溶けたワイヤ先
端は酸化することなく常に安定して球状塊５とな
る。なお、前記放電電極１はその直立部６を介し
て即存のワイヤボンデイング装置を取り付け、常
時は水平な先端部である放電端４をボンデイング
ツール３の下方から外れるようにしておくととも
に、球状塊形成時には前記直立部６を所定角度回
動させて放電端４をボンデイングツール３の真下
に臨むようにすればよい。このため、実施例の球
状塊形成装置は既存のワイヤボンデイング装置に
簡単に取り付けることができる。また、球状塊形
成時は放電端が回動によつてボンデイングツール
の下方に突出させて電圧を印加するだけでよいこ
とから、作業性も高い。 FIG. 1 shows a spheroidizing mechanism used in the technology that is the premise of the present invention. The discharge electrode 1 is made of a pipe, and at the tip facing the lower end of a bonding tool (here, a capillary) 3 that holds an aluminum wire 2, only the lower part of the pipe extends as it is, forming a discharge end 4. As a result, when the wire 2 faces the discharge end 4 from above and a predetermined voltage is applied between the wire 2 and the discharge end 4, a discharge occurs between the tip of the wire 2 and the discharge end 4, and the wire 2 The tip of the will melt. At this time, since an inert gas such as argon or nitrogen is constantly released from the tip of the discharge electrode 1, the tip of the wire 2, that is, the discharge space, is filled with inert gas, and the melted wire tip is The spherical mass 5 is always stably formed without oxidation. The discharge electrode 1 is attached with an existing wire bonding device via its upright portion 6, and the discharge end 4, which is normally a horizontal tip, is removed from below the bonding tool 3. During formation, the upright portion 6 may be rotated by a predetermined angle so that the discharge end 4 faces directly below the bonding tool 3. Therefore, the spherical lump forming device of the embodiment can be easily attached to an existing wire bonding device. Further, when forming a spherical lump, the discharge end only needs to be rotated to protrude below the bonding tool and a voltage is applied, resulting in high workability.
第２図ａ，ｂはそれぞれ本発明に用いられる球
状化機構部である。同図ａでは放電電極１の先端
のパイプ部分に栓７を挿入するとともに、上部を
一部切り欠いてガス噴出口８とし、この中央部に
放電面を形作る放電板９を掛け渡して固定した構
造となつている。この構造では放電板９の前後の
隙間から放電電極１内を流れて来た不活性ガスが
噴出し、矢印に示すように不活性ガスはワイヤの
延長線の下方からワイヤ先端に向かつて流れ、放
電空間を不活性ガスで充満させる。この実施例で
は直接強い流れの不活性ガスがワイヤ２に当たら
ないことから、ワイヤ先端が曲がつたりあるいは
球状塊が偏平となつたりしない利点がある。ま
た、同図ｂでは同図ａの構造に加えて、切欠部の
上部に庇状の突部１０を形作り、さらに放電空間
での不活性ガス濃度を高め、球状塊形成の安定性
を増大させている。 Figures 2a and 2b show the spheroidizing mechanism used in the present invention, respectively. In Figure a, a plug 7 is inserted into the pipe at the tip of the discharge electrode 1, and a part of the upper part is cut out to form a gas outlet 8, and a discharge plate 9 forming a discharge surface is stretched over and fixed in the center of this. It has a structure. In this structure, the inert gas that has flowed inside the discharge electrode 1 blows out from the gap between the front and rear of the discharge plate 9, and as shown by the arrow, the inert gas flows from below the extension line of the wire toward the tip of the wire. Fill the discharge space with inert gas. In this embodiment, since a strong flow of inert gas does not directly hit the wire 2, there is an advantage that the tip of the wire does not become bent or the spherical mass becomes flat. In addition to the structure shown in Figure a, Figure b also has an eave-like protrusion 10 formed at the top of the notch to increase the inert gas concentration in the discharge space and increase the stability of spherical mass formation. ing.
以上のように、本発明によれば、ワイヤ先端が
曲がつたりあるいは球状塊が偏平となつたりせず
に常に安定な球状塊を形成することができるので
ボンデイングの信頼度を向上することができる。 As described above, according to the present invention, it is possible to always form a stable spherical lump without bending the tip of the wire or flattening the spherical lump, thereby improving the reliability of bonding. can.
第１図は本発明のの前提となる技術に用いる球
状化機構部を示す断面説明図、第２図ａ，ｂは本
発明に用いられる球状化機構部を示す断面説明
図、
１……放電電極、２……ワイヤ、３……ボンデ
イングツール、５……球状塊、９……放電板。
FIG. 1 is a cross-sectional explanatory diagram showing the spheroidizing mechanism used in the technology that is the premise of the present invention, FIGS. 2 a and b are cross-sectional explanatory diagrams showing the spheroidizing mechanism used in the present invention, 1... Discharge Electrode, 2... Wire, 3... Bonding tool, 5... Spherical mass, 9... Discharge plate.
Claims (1)
から下方に突出したワイヤ先端と放電電極との間
に放電を生じさせてワイヤ先端を球状にし、得ら
れた球状部を用いて上記ワイヤを半導体素子に接
続するワイヤボンデイング方法において、前記ワ
イヤの延長線の下方から前記ワイヤ先端に向かつ
て不活性ガスを供給しながら前記ワイヤ先端と前
記放電電極との間に放電を生じさせるようにした
ことを特徴とするワイヤボンデイング方法。1 In an inert gas atmosphere, a discharge is generated between the tip of the wire protruding downward from the bonding tool and the discharge electrode to make the tip of the wire spherical, and the resulting spherical part is used to connect the wire to the semiconductor element. The wire bonding method is characterized in that an inert gas is supplied from below an extension of the wire toward the tip of the wire to generate a discharge between the tip of the wire and the discharge electrode. Wire bonding method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55165349A JPS5789232A (en) | 1980-11-26 | 1980-11-26 | Forming device of spherical lump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55165349A JPS5789232A (en) | 1980-11-26 | 1980-11-26 | Forming device of spherical lump |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5789232A JPS5789232A (en) | 1982-06-03 |
| JPS6333296B2 true JPS6333296B2 (en) | 1988-07-05 |
Family
ID=15810662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55165349A Granted JPS5789232A (en) | 1980-11-26 | 1980-11-26 | Forming device of spherical lump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789232A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58131743A (en) * | 1982-01-29 | 1983-08-05 | Shinkawa Ltd | Method of ball formation for wire bonder and device thereof |
| JPS58212145A (en) * | 1982-06-03 | 1983-12-09 | Toshiba Corp | Wire bonding method |
| JPS5917254A (en) * | 1982-07-20 | 1984-01-28 | Shinkawa Ltd | Forming method for ball in wire bonder |
| JPS5926246U (en) * | 1982-08-10 | 1984-02-18 | 海上電機株式会社 | Spark electrode for aluminum ball forming |
| JPS60211951A (en) * | 1984-04-06 | 1985-10-24 | Toshiba Corp | Wire-bonding device |
| JPS60213038A (en) * | 1984-04-09 | 1985-10-25 | Toshiba Corp | Wire bonding device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147174A (en) * | 1975-05-15 | 1976-12-17 | Welding Inst | Method and apparatus for connecting wires |
-
1980
- 1980-11-26 JP JP55165349A patent/JPS5789232A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147174A (en) * | 1975-05-15 | 1976-12-17 | Welding Inst | Method and apparatus for connecting wires |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5789232A (en) | 1982-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58169918A (en) | wire bonder | |
| JP3248778B2 (en) | Method of forming ball part on solder wire | |
| JPS6333296B2 (en) | ||
| JPS60227432A (en) | Ball forming device of bonding wire | |
| JP3455126B2 (en) | Wire bonding method | |
| JPS603134A (en) | Wire bonding method | |
| US20090140029A1 (en) | Method and device for wire bonding | |
| JPH0158861B2 (en) | ||
| CN210014392U (en) | Ignition device for integrated circuit packaging process | |
| JP2904618B2 (en) | Ball forming device for wire bonder | |
| JPS6252845A (en) | Gas discharge lamp and manufacture thereof | |
| JPH0536748A (en) | Wire bonding device | |
| JP3534852B2 (en) | Wire bonding equipment | |
| JPS58103145A (en) | Bonding wire ball forming method | |
| JPS5784144A (en) | Bonding of fine metal wire | |
| JPH0530060B2 (en) | ||
| JP3420905B2 (en) | Lead wire loop forming method in wire bonding apparatus | |
| JPS5827329A (en) | Wire bonding method | |
| JPH0684993A (en) | Semiconductor device | |
| JPS60211951A (en) | Wire-bonding device | |
| JPH0521500A (en) | Ball forming device for wire bonder | |
| JPH01196131A (en) | Formation of wire bonding ball | |
| JPS58139434A (en) | wire bonding equipment | |
| JPS5994835A (en) | Device for wire bonding | |
| JPS5946038A (en) | Bonding device |